FR2526178B1 - Procede de formation de micro-motifs par developpement - Google Patents

Procede de formation de micro-motifs par developpement

Info

Publication number
FR2526178B1
FR2526178B1 FR8307042A FR8307042A FR2526178B1 FR 2526178 B1 FR2526178 B1 FR 2526178B1 FR 8307042 A FR8307042 A FR 8307042A FR 8307042 A FR8307042 A FR 8307042A FR 2526178 B1 FR2526178 B1 FR 2526178B1
Authority
FR
France
Prior art keywords
patterns
development
forming micro
micro
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8307042A
Other languages
English (en)
Other versions
FR2526178A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tosoh Corp
Original Assignee
Toyo Soda Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Soda Manufacturing Co Ltd filed Critical Toyo Soda Manufacturing Co Ltd
Publication of FR2526178A1 publication Critical patent/FR2526178A1/fr
Application granted granted Critical
Publication of FR2526178B1 publication Critical patent/FR2526178B1/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
FR8307042A 1982-04-28 1983-04-28 Procede de formation de micro-motifs par developpement Expired FR2526178B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57070482A JPS58187926A (ja) 1982-04-28 1982-04-28 放射線ネガ型レジストの現像方法

Publications (2)

Publication Number Publication Date
FR2526178A1 FR2526178A1 (fr) 1983-11-04
FR2526178B1 true FR2526178B1 (fr) 1985-09-06

Family

ID=13432777

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8307042A Expired FR2526178B1 (fr) 1982-04-28 1983-04-28 Procede de formation de micro-motifs par developpement

Country Status (5)

Country Link
US (1) US4690887A (fr)
JP (1) JPS58187926A (fr)
DE (1) DE3315118A1 (fr)
FR (1) FR2526178B1 (fr)
GB (1) GB2123161B (fr)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4665009A (en) * 1984-07-10 1987-05-12 Hughes Aircraft Company Method of developing radiation sensitive negative resists
JPS61149947A (ja) * 1984-12-24 1986-07-08 Nec Corp レジスト材料
JPS61156254A (ja) * 1984-12-28 1986-07-15 Nec Corp レジスト材料
JPS61156253A (ja) * 1984-12-28 1986-07-15 Nec Corp レジスト材料
US5354645A (en) * 1988-08-23 1994-10-11 E. I. Du Pont De Nemours And Company Process for the production of flexographic printing reliefs
DE3828551C3 (de) * 1988-08-23 1995-02-23 Du Pont Deutschland Verfahren zur Herstellung von flexographischen Druckformen
AU628399B2 (en) * 1988-08-23 1992-09-17 E.I. Du Pont De Nemours And Company Process for the production of flexographic printing reliefs
DE4020373A1 (de) * 1990-06-27 1992-01-02 Basf Ag Verfahren zur herstellung photopolymerer flexographischer reliefdruckplatten
FR2669442B1 (fr) * 1990-11-20 1996-06-28 Verger Desporte Ste Nle Ets J Procede de transfert d'images topologiques.
JP2707164B2 (ja) * 1991-05-28 1998-01-28 信越化学工業株式会社 レジスト材
US5221362A (en) * 1991-08-23 1993-06-22 E. I. Du Pont De Nemours And Company Non-halogenated aqueous cleaning systems
US8530148B2 (en) * 2006-12-25 2013-09-10 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US8637229B2 (en) * 2006-12-25 2014-01-28 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
JP4554665B2 (ja) 2006-12-25 2010-09-29 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
US8034547B2 (en) * 2007-04-13 2011-10-11 Fujifilm Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
US8603733B2 (en) 2007-04-13 2013-12-10 Fujifilm Corporation Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
JP4562784B2 (ja) 2007-04-13 2010-10-13 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられるレジスト組成物、現像液及びリンス液
US8476001B2 (en) 2007-05-15 2013-07-02 Fujifilm Corporation Pattern forming method
WO2008140119A1 (fr) * 2007-05-15 2008-11-20 Fujifilm Corporation Procédé de formation d'un motif
US8617794B2 (en) 2007-06-12 2013-12-31 Fujifilm Corporation Method of forming patterns
JP4617337B2 (ja) * 2007-06-12 2011-01-26 富士フイルム株式会社 パターン形成方法
JP4783853B2 (ja) * 2007-06-12 2011-09-28 富士フイルム株式会社 ネガ型現像用レジスト組成物を用いたパターン形成方法
JP4590431B2 (ja) * 2007-06-12 2010-12-01 富士フイルム株式会社 パターン形成方法
US8632942B2 (en) 2007-06-12 2014-01-21 Fujifilm Corporation Method of forming patterns
US20100068651A1 (en) * 2008-09-16 2010-03-18 Bradford David C Developing solution for flexographic printing plates

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1115813A (en) * 1965-06-01 1968-05-29 Agfa Gevaert Nv Method for recording and reproducing information by surface modification of a polymeric composition
US3634082A (en) * 1967-07-07 1972-01-11 Shipley Co Light-sensitive naphthoquinone diazide composition containing a polyvinyl ether
US3987215A (en) * 1974-04-22 1976-10-19 International Business Machines Corporation Resist mask formation process
JPS5299776A (en) * 1976-02-18 1977-08-22 Hitachi Ltd Radiation sensitive high polymeric material
US4148654A (en) * 1976-07-22 1979-04-10 Oddi Michael J Positive acting photoresist comprising diazide ester, novolak resin and rosin
AU3870478A (en) * 1977-08-09 1980-02-14 Somar Mfg High energy radiation cruable resist material
US4141733A (en) * 1977-10-25 1979-02-27 Eastman Kodak Company Development of light-sensitive quinone diazide compositions
JPS5511217A (en) * 1978-07-10 1980-01-26 Nippon Telegr & Teleph Corp <Ntt> Pattern forming method using radiation sensitive high polymer
JPS5555335A (en) * 1978-10-19 1980-04-23 Fuji Photo Film Co Ltd Photosensitive composition
JPS5629231A (en) * 1979-08-17 1981-03-24 Hitachi Ltd Radiation sensitive material and pattern forming method
JPS6058465B2 (ja) * 1979-11-15 1985-12-20 富士通株式会社 微細パタ−ン形成法
JPS5683740A (en) * 1979-12-13 1981-07-08 Japan Synthetic Rubber Co Ltd Developer for polymer photoresist
JPS56110932A (en) * 1980-02-07 1981-09-02 Nippon Telegr & Teleph Corp <Ntt> Compound for negative type resist
JPS56114942A (en) * 1980-02-15 1981-09-09 Oki Electric Ind Co Ltd High energy beam sensitive resist material and its using method
JPS57185036A (en) * 1981-05-08 1982-11-15 Fujitsu Ltd Resist and method for forming micropattern
JPS58143343A (ja) * 1982-02-19 1983-08-25 Nippon Telegr & Teleph Corp <Ntt> 現像溶媒
US4515886A (en) * 1983-02-16 1985-05-07 Toyo Soda Manufacturing Co., Ltd. Photosensitive compositions
US4507384A (en) * 1983-04-18 1985-03-26 Nippon Telegraph & Telephone Public Corporation Pattern forming material and method for forming pattern therewith

Also Published As

Publication number Publication date
GB8311675D0 (en) 1983-06-02
US4690887A (en) 1987-09-01
GB2123161B (en) 1986-02-26
GB2123161A (en) 1984-01-25
DE3315118C2 (fr) 1992-08-20
JPS58187926A (ja) 1983-11-02
DE3315118A1 (de) 1983-11-24
JPH0546535B2 (fr) 1993-07-14
FR2526178A1 (fr) 1983-11-04

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Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse