JPS5683740A - Developer for polymer photoresist - Google Patents
Developer for polymer photoresistInfo
- Publication number
- JPS5683740A JPS5683740A JP16203979A JP16203979A JPS5683740A JP S5683740 A JPS5683740 A JP S5683740A JP 16203979 A JP16203979 A JP 16203979A JP 16203979 A JP16203979 A JP 16203979A JP S5683740 A JPS5683740 A JP S5683740A
- Authority
- JP
- Japan
- Prior art keywords
- developer
- solvent
- polymer photoresist
- good solvent
- mixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
PURPOSE:To obtain an image with high resolution without requiring a rinsing process by using a bad solvent and a good solvent different from each other in b.p. to prepare a developer for a polymer photoresist and specifying the 2nd virial coefficient. CONSTITUTION:A good solvent such as cyclohexanone having 80.7 deg.C b.p. and a bad solvent such as n-butyl acetate having 125 deg.C b.p. are mixed in (1-9):(9-1) vol. ratio, and this mixed org. solvent is required to be higher than that of the good solvent. By carrying out development with this developer at 20-30 deg.C, the 2nd virial coefficient A2 is adjusted to -0.2X10<-4>-+1.2X10<-4>ml/g. This developer is suitable for developing a polymer photoresist and gives an image with high resolution without subjecting to any rinsing process.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16203979A JPS5683740A (en) | 1979-12-13 | 1979-12-13 | Developer for polymer photoresist |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16203979A JPS5683740A (en) | 1979-12-13 | 1979-12-13 | Developer for polymer photoresist |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5683740A true JPS5683740A (en) | 1981-07-08 |
Family
ID=15746914
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16203979A Pending JPS5683740A (en) | 1979-12-13 | 1979-12-13 | Developer for polymer photoresist |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5683740A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56101148A (en) * | 1980-01-16 | 1981-08-13 | Toshiba Corp | Photoresist developing method |
JPS5876836A (en) * | 1981-10-31 | 1983-05-10 | Toshiba Corp | Developer of high resolution resist |
JPS58137836A (en) * | 1982-02-10 | 1983-08-16 | Toshiba Corp | Processing agent for rubber resist |
JPS58187926A (en) * | 1982-04-28 | 1983-11-02 | Toyo Soda Mfg Co Ltd | Method for developing radiation sensitive negative type resist |
JPS592043A (en) * | 1982-06-29 | 1984-01-07 | Fujitsu Ltd | Photoresist developing method |
EP0124265A2 (en) * | 1983-03-31 | 1984-11-07 | Oki Electric Industry Company, Limited | Process for forming pattern with negative resist |
JPH0566570A (en) * | 1991-09-06 | 1993-03-19 | Nippon Telegr & Teleph Corp <Ntt> | Resist developer and pattern forming method |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5151939A (en) * | 1974-10-31 | 1976-05-07 | Canon Kk | SAISENPATAANYOHOTOREJISUTOGENZOEKI |
JPS51130222A (en) * | 1975-05-07 | 1976-11-12 | Hitachi Ltd | A process for producing an electron beam resist image |
JPS5276924A (en) * | 1975-12-23 | 1977-06-28 | Japan Synthetic Rubber Co Ltd | Developer |
JPS5330330A (en) * | 1976-09-01 | 1978-03-22 | Fujitsu Ltd | Developing liquid for radiant ray resist |
JPS5359367A (en) * | 1976-11-10 | 1978-05-29 | Hitachi Ltd | Formation of electron beam resist image |
JPS5463828A (en) * | 1977-10-31 | 1979-05-23 | Japan Synthetic Rubber Co Ltd | Developer for photoresist |
JPS54140535A (en) * | 1978-04-24 | 1979-10-31 | Japan Synthetic Rubber Co Ltd | Developer |
JPS5627143A (en) * | 1979-08-14 | 1981-03-16 | Japan Synthetic Rubber Co Ltd | Polymer type photoresist developing method |
-
1979
- 1979-12-13 JP JP16203979A patent/JPS5683740A/en active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5151939A (en) * | 1974-10-31 | 1976-05-07 | Canon Kk | SAISENPATAANYOHOTOREJISUTOGENZOEKI |
JPS51130222A (en) * | 1975-05-07 | 1976-11-12 | Hitachi Ltd | A process for producing an electron beam resist image |
JPS5276924A (en) * | 1975-12-23 | 1977-06-28 | Japan Synthetic Rubber Co Ltd | Developer |
JPS5330330A (en) * | 1976-09-01 | 1978-03-22 | Fujitsu Ltd | Developing liquid for radiant ray resist |
JPS5359367A (en) * | 1976-11-10 | 1978-05-29 | Hitachi Ltd | Formation of electron beam resist image |
JPS5463828A (en) * | 1977-10-31 | 1979-05-23 | Japan Synthetic Rubber Co Ltd | Developer for photoresist |
JPS54140535A (en) * | 1978-04-24 | 1979-10-31 | Japan Synthetic Rubber Co Ltd | Developer |
JPS5627143A (en) * | 1979-08-14 | 1981-03-16 | Japan Synthetic Rubber Co Ltd | Polymer type photoresist developing method |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56101148A (en) * | 1980-01-16 | 1981-08-13 | Toshiba Corp | Photoresist developing method |
JPH0145055B2 (en) * | 1980-01-16 | 1989-10-02 | Tokyo Shibaura Electric Co | |
JPS5876836A (en) * | 1981-10-31 | 1983-05-10 | Toshiba Corp | Developer of high resolution resist |
JPS58137836A (en) * | 1982-02-10 | 1983-08-16 | Toshiba Corp | Processing agent for rubber resist |
JPS58187926A (en) * | 1982-04-28 | 1983-11-02 | Toyo Soda Mfg Co Ltd | Method for developing radiation sensitive negative type resist |
JPH0546535B2 (en) * | 1982-04-28 | 1993-07-14 | Tosoh Corp | |
JPS592043A (en) * | 1982-06-29 | 1984-01-07 | Fujitsu Ltd | Photoresist developing method |
JPH0319540B2 (en) * | 1982-06-29 | 1991-03-15 | Fujitsu Ltd | |
EP0124265A2 (en) * | 1983-03-31 | 1984-11-07 | Oki Electric Industry Company, Limited | Process for forming pattern with negative resist |
JPH0566570A (en) * | 1991-09-06 | 1993-03-19 | Nippon Telegr & Teleph Corp <Ntt> | Resist developer and pattern forming method |
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