FR2499770B1 - Procede de production de transducteurs de pression a haute temperature, dispositif a utiliser comme transducteurs de pression et semi-conducteurs et structure a utiliser comme semi-conducteur - Google Patents

Procede de production de transducteurs de pression a haute temperature, dispositif a utiliser comme transducteurs de pression et semi-conducteurs et structure a utiliser comme semi-conducteur

Info

Publication number
FR2499770B1
FR2499770B1 FR828202223A FR8202223A FR2499770B1 FR 2499770 B1 FR2499770 B1 FR 2499770B1 FR 828202223 A FR828202223 A FR 828202223A FR 8202223 A FR8202223 A FR 8202223A FR 2499770 B1 FR2499770 B1 FR 2499770B1
Authority
FR
France
Prior art keywords
pressure transducers
semiconductors
semiconductor
high temperature
producing high
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR828202223A
Other languages
English (en)
French (fr)
Other versions
FR2499770A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Becton Dickinson and Co
Original Assignee
Becton Dickinson and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Becton Dickinson and Co filed Critical Becton Dickinson and Co
Publication of FR2499770A1 publication Critical patent/FR2499770A1/fr
Application granted granted Critical
Publication of FR2499770B1 publication Critical patent/FR2499770B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49103—Strain gauge making

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
FR828202223A 1981-02-12 1982-02-11 Procede de production de transducteurs de pression a haute temperature, dispositif a utiliser comme transducteurs de pression et semi-conducteurs et structure a utiliser comme semi-conducteur Expired FR2499770B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/233,728 US4400869A (en) 1981-02-12 1981-02-12 Process for producing high temperature pressure transducers and semiconductors

Publications (2)

Publication Number Publication Date
FR2499770A1 FR2499770A1 (fr) 1982-08-13
FR2499770B1 true FR2499770B1 (fr) 1985-07-26

Family

ID=22878456

Family Applications (2)

Application Number Title Priority Date Filing Date
FR828202223A Expired FR2499770B1 (fr) 1981-02-12 1982-02-11 Procede de production de transducteurs de pression a haute temperature, dispositif a utiliser comme transducteurs de pression et semi-conducteurs et structure a utiliser comme semi-conducteur
FR8212816A Expired FR2513441B1 (fr) 1981-02-12 1982-07-22 Dispositifs transducteurs de pression et semi-conducteurs miniaturises pour temperatures elevees

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR8212816A Expired FR2513441B1 (fr) 1981-02-12 1982-07-22 Dispositifs transducteurs de pression et semi-conducteurs miniaturises pour temperatures elevees

Country Status (5)

Country Link
US (1) US4400869A (enExample)
JP (1) JPS57148378A (enExample)
DE (2) DE3204602A1 (enExample)
FR (2) FR2499770B1 (enExample)
GB (1) GB2093272B (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58138033A (ja) * 1982-02-10 1983-08-16 Toshiba Corp 半導体基板及び半導体装置の製造方法
US4498229A (en) * 1982-10-04 1985-02-12 Becton, Dickinson And Company Piezoresistive transducer
US4467656A (en) * 1983-03-07 1984-08-28 Kulite Semiconductor Products, Inc. Transducer apparatus employing convoluted semiconductor diaphragms
JPS60253279A (ja) * 1984-05-29 1985-12-13 Toyota Central Res & Dev Lab Inc 半導体歪み測定器
CA1251514A (en) * 1985-02-20 1989-03-21 Tadashi Sakai Ion selective field effect transistor sensor
US4739298A (en) * 1985-02-28 1988-04-19 Kulite Semiconductor Products, Inc. High temperature transducers and methods of manufacturing
GB2174241A (en) * 1985-04-25 1986-10-29 Transamerica Delaval Inc Transducer devices
US4782028A (en) * 1987-08-27 1988-11-01 Santa Barbara Research Center Process methodology for two-sided fabrication of devices on thinned silicon
US4904978A (en) * 1988-04-29 1990-02-27 Solartron Electronics, Inc. Mechanical sensor for high temperature environments
JPH0748564B2 (ja) * 1988-05-07 1995-05-24 シャープ株式会社 シリコンマイクロセンサ
US5310610A (en) * 1988-05-07 1994-05-10 Sharp Kabushiki Kaisha Silicon micro sensor and manufacturing method therefor
DE3918769C2 (de) * 1988-06-08 2001-12-13 Denso Corp Halbleiterdrucksensor und Verfahren zu seiner Herstellung
US5155061A (en) * 1991-06-03 1992-10-13 Allied-Signal Inc. Method for fabricating a silicon pressure sensor incorporating silicon-on-insulator structures
JPH05190872A (ja) * 1992-01-16 1993-07-30 Oki Electric Ind Co Ltd 半導体圧力センサおよびその製造方法
JP3300060B2 (ja) * 1992-10-22 2002-07-08 キヤノン株式会社 加速度センサー及びその製造方法
US7400042B2 (en) * 2005-05-03 2008-07-15 Rosemount Aerospace Inc. Substrate with adhesive bonding metallization with diffusion barrier
US7538401B2 (en) 2005-05-03 2009-05-26 Rosemount Aerospace Inc. Transducer for use in harsh environments
US7628309B1 (en) 2005-05-03 2009-12-08 Rosemount Aerospace Inc. Transient liquid phase eutectic bonding
US20070013014A1 (en) * 2005-05-03 2007-01-18 Shuwen Guo High temperature resistant solid state pressure sensor
US20080277747A1 (en) * 2007-05-08 2008-11-13 Nazir Ahmad MEMS device support structure for sensor packaging
US8643127B2 (en) * 2008-08-21 2014-02-04 S3C, Inc. Sensor device packaging
US7775119B1 (en) 2009-03-03 2010-08-17 S3C, Inc. Media-compatible electrically isolated pressure sensor for high temperature applications
RU2507491C1 (ru) * 2012-07-20 2014-02-20 Российская Федерация, От Имени Которой Выступает Министерство Промышленности И Торговли Российской Федерации Высокотемпературный полупроводниковый преобразователь давления
WO2018092130A1 (en) * 2016-11-17 2018-05-24 Ezmems Ltd. High resistance strain gauges and methods of production thereof
CN109411427B (zh) * 2018-09-06 2020-06-09 中国电子科技集团公司第二十九研究所 一种微流道散热器及其制造方法
US10770206B1 (en) * 2019-04-08 2020-09-08 Government Of The United States As Represented By The Secretary Of The Air Force System and method for fabricating a strain sensing device directly on a structure

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3713068A (en) * 1971-06-07 1973-01-23 Itt Bonded assemblies and methods of making the same
US3800264A (en) * 1972-03-14 1974-03-26 Kulite Semiconductor Products High temperature transducers and housing including fabrication methods
US3868719A (en) * 1973-04-02 1975-02-25 Kulite Semiconductor Products Thin ribbon-like glass backed transducers
US3922705A (en) * 1973-06-04 1975-11-25 Gen Electric Dielectrically isolated integral silicon diaphram or other semiconductor product
US3858150A (en) * 1973-06-21 1974-12-31 Motorola Inc Polycrystalline silicon pressure sensor
US3873956A (en) * 1973-09-04 1975-03-25 Kulite Semiconductor Products Integrated transducer assemblies
US4065970A (en) * 1976-05-17 1978-01-03 Becton, Dickinson Electronics Company Diffused semiconductor pressure gauge
US4204185A (en) * 1977-10-13 1980-05-20 Kulite Semiconductor Products, Inc. Integral transducer assemblies employing thin homogeneous diaphragms

Also Published As

Publication number Publication date
DE3204602C2 (enExample) 1988-03-10
US4400869A (en) 1983-08-30
GB2093272A (en) 1982-08-25
FR2513441B1 (fr) 1985-08-23
DE3249594C2 (enExample) 1990-01-18
FR2499770A1 (fr) 1982-08-13
GB2093272B (en) 1985-04-11
DE3204602A1 (de) 1982-09-09
FR2513441A1 (fr) 1983-03-25
JPS57148378A (en) 1982-09-13

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Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse