JPS57148378A - High temperature laminar silicon structure - Google Patents

High temperature laminar silicon structure

Info

Publication number
JPS57148378A
JPS57148378A JP57006726A JP672682A JPS57148378A JP S57148378 A JPS57148378 A JP S57148378A JP 57006726 A JP57006726 A JP 57006726A JP 672682 A JP672682 A JP 672682A JP S57148378 A JPS57148378 A JP S57148378A
Authority
JP
Japan
Prior art keywords
high temperature
silicon structure
temperature laminar
laminar silicon
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57006726A
Other languages
English (en)
Japanese (ja)
Inventor
Buruusu Uirunaa Resurii
Baanon Uon Haabaato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Becton Dickinson and Co
Original Assignee
Becton Dickinson and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Becton Dickinson and Co filed Critical Becton Dickinson and Co
Publication of JPS57148378A publication Critical patent/JPS57148378A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49103—Strain gauge making

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
JP57006726A 1981-02-12 1982-01-19 High temperature laminar silicon structure Pending JPS57148378A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/233,728 US4400869A (en) 1981-02-12 1981-02-12 Process for producing high temperature pressure transducers and semiconductors

Publications (1)

Publication Number Publication Date
JPS57148378A true JPS57148378A (en) 1982-09-13

Family

ID=22878456

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57006726A Pending JPS57148378A (en) 1981-02-12 1982-01-19 High temperature laminar silicon structure

Country Status (5)

Country Link
US (1) US4400869A (enExample)
JP (1) JPS57148378A (enExample)
DE (2) DE3204602A1 (enExample)
FR (2) FR2499770B1 (enExample)
GB (1) GB2093272B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60253279A (ja) * 1984-05-29 1985-12-13 Toyota Central Res & Dev Lab Inc 半導体歪み測定器

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58138033A (ja) * 1982-02-10 1983-08-16 Toshiba Corp 半導体基板及び半導体装置の製造方法
US4498229A (en) * 1982-10-04 1985-02-12 Becton, Dickinson And Company Piezoresistive transducer
US4467656A (en) * 1983-03-07 1984-08-28 Kulite Semiconductor Products, Inc. Transducer apparatus employing convoluted semiconductor diaphragms
CA1251514A (en) * 1985-02-20 1989-03-21 Tadashi Sakai Ion selective field effect transistor sensor
US4739298A (en) * 1985-02-28 1988-04-19 Kulite Semiconductor Products, Inc. High temperature transducers and methods of manufacturing
GB2174241A (en) * 1985-04-25 1986-10-29 Transamerica Delaval Inc Transducer devices
US4782028A (en) * 1987-08-27 1988-11-01 Santa Barbara Research Center Process methodology for two-sided fabrication of devices on thinned silicon
US4904978A (en) * 1988-04-29 1990-02-27 Solartron Electronics, Inc. Mechanical sensor for high temperature environments
JPH0748564B2 (ja) * 1988-05-07 1995-05-24 シャープ株式会社 シリコンマイクロセンサ
US5310610A (en) * 1988-05-07 1994-05-10 Sharp Kabushiki Kaisha Silicon micro sensor and manufacturing method therefor
DE3918769C2 (de) * 1988-06-08 2001-12-13 Denso Corp Halbleiterdrucksensor und Verfahren zu seiner Herstellung
US5155061A (en) * 1991-06-03 1992-10-13 Allied-Signal Inc. Method for fabricating a silicon pressure sensor incorporating silicon-on-insulator structures
JPH05190872A (ja) * 1992-01-16 1993-07-30 Oki Electric Ind Co Ltd 半導体圧力センサおよびその製造方法
JP3300060B2 (ja) * 1992-10-22 2002-07-08 キヤノン株式会社 加速度センサー及びその製造方法
US7400042B2 (en) * 2005-05-03 2008-07-15 Rosemount Aerospace Inc. Substrate with adhesive bonding metallization with diffusion barrier
US7538401B2 (en) 2005-05-03 2009-05-26 Rosemount Aerospace Inc. Transducer for use in harsh environments
US7628309B1 (en) 2005-05-03 2009-12-08 Rosemount Aerospace Inc. Transient liquid phase eutectic bonding
US20070013014A1 (en) * 2005-05-03 2007-01-18 Shuwen Guo High temperature resistant solid state pressure sensor
US20080277747A1 (en) * 2007-05-08 2008-11-13 Nazir Ahmad MEMS device support structure for sensor packaging
US8643127B2 (en) * 2008-08-21 2014-02-04 S3C, Inc. Sensor device packaging
US7775119B1 (en) 2009-03-03 2010-08-17 S3C, Inc. Media-compatible electrically isolated pressure sensor for high temperature applications
RU2507491C1 (ru) * 2012-07-20 2014-02-20 Российская Федерация, От Имени Которой Выступает Министерство Промышленности И Торговли Российской Федерации Высокотемпературный полупроводниковый преобразователь давления
WO2018092130A1 (en) * 2016-11-17 2018-05-24 Ezmems Ltd. High resistance strain gauges and methods of production thereof
CN109411427B (zh) * 2018-09-06 2020-06-09 中国电子科技集团公司第二十九研究所 一种微流道散热器及其制造方法
US10770206B1 (en) * 2019-04-08 2020-09-08 Government Of The United States As Represented By The Secretary Of The Air Force System and method for fabricating a strain sensing device directly on a structure

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5030488A (enExample) * 1973-04-02 1975-03-26

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3713068A (en) * 1971-06-07 1973-01-23 Itt Bonded assemblies and methods of making the same
US3800264A (en) * 1972-03-14 1974-03-26 Kulite Semiconductor Products High temperature transducers and housing including fabrication methods
US3922705A (en) * 1973-06-04 1975-11-25 Gen Electric Dielectrically isolated integral silicon diaphram or other semiconductor product
US3858150A (en) * 1973-06-21 1974-12-31 Motorola Inc Polycrystalline silicon pressure sensor
US3873956A (en) * 1973-09-04 1975-03-25 Kulite Semiconductor Products Integrated transducer assemblies
US4065970A (en) * 1976-05-17 1978-01-03 Becton, Dickinson Electronics Company Diffused semiconductor pressure gauge
US4204185A (en) * 1977-10-13 1980-05-20 Kulite Semiconductor Products, Inc. Integral transducer assemblies employing thin homogeneous diaphragms

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5030488A (enExample) * 1973-04-02 1975-03-26

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60253279A (ja) * 1984-05-29 1985-12-13 Toyota Central Res & Dev Lab Inc 半導体歪み測定器

Also Published As

Publication number Publication date
DE3204602C2 (enExample) 1988-03-10
US4400869A (en) 1983-08-30
GB2093272A (en) 1982-08-25
FR2513441B1 (fr) 1985-08-23
FR2499770B1 (fr) 1985-07-26
DE3249594C2 (enExample) 1990-01-18
FR2499770A1 (fr) 1982-08-13
GB2093272B (en) 1985-04-11
DE3204602A1 (de) 1982-09-09
FR2513441A1 (fr) 1983-03-25

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