FR2471051A1 - Circuit integre a transistors mos protege contre l'analyse et carte comprenant un tel circuit - Google Patents

Circuit integre a transistors mos protege contre l'analyse et carte comprenant un tel circuit Download PDF

Info

Publication number
FR2471051A1
FR2471051A1 FR7929590A FR7929590A FR2471051A1 FR 2471051 A1 FR2471051 A1 FR 2471051A1 FR 7929590 A FR7929590 A FR 7929590A FR 7929590 A FR7929590 A FR 7929590A FR 2471051 A1 FR2471051 A1 FR 2471051A1
Authority
FR
France
Prior art keywords
integrated circuit
mos transistors
strips
circuit
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7929590A
Other languages
English (en)
French (fr)
Other versions
FR2471051B1 (enExample
Inventor
Alain Meinguss
Bernard Despres
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Dassault Electronique SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dassault Electronique SA filed Critical Dassault Electronique SA
Priority to FR7929590A priority Critical patent/FR2471051A1/fr
Priority to DE19803044983 priority patent/DE3044983A1/de
Priority to US06/211,968 priority patent/US4434361A/en
Publication of FR2471051A1 publication Critical patent/FR2471051A1/fr
Application granted granted Critical
Publication of FR2471051B1 publication Critical patent/FR2471051B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
    • H10W42/40Arrangements for protection of devices protecting against tampering, e.g. unauthorised inspection or reverse engineering
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06KGRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/07745Mounting details of integrated circuit chips
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/922Active solid-state devices, e.g. transistors, solid-state diodes with means to prevent inspection of or tampering with an integrated circuit, e.g. "smart card", anti-tamper

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
FR7929590A 1979-11-30 1979-11-30 Circuit integre a transistors mos protege contre l'analyse et carte comprenant un tel circuit Granted FR2471051A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR7929590A FR2471051A1 (fr) 1979-11-30 1979-11-30 Circuit integre a transistors mos protege contre l'analyse et carte comprenant un tel circuit
DE19803044983 DE3044983A1 (de) 1979-11-30 1980-11-28 Integrierte schaltungsanordnung mit transistorelementen
US06/211,968 US4434361A (en) 1979-11-30 1980-12-01 Transistor integrated circuit protected against the analysis, and a card comprising such a circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7929590A FR2471051A1 (fr) 1979-11-30 1979-11-30 Circuit integre a transistors mos protege contre l'analyse et carte comprenant un tel circuit

Publications (2)

Publication Number Publication Date
FR2471051A1 true FR2471051A1 (fr) 1981-06-12
FR2471051B1 FR2471051B1 (enExample) 1983-06-24

Family

ID=9232290

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7929590A Granted FR2471051A1 (fr) 1979-11-30 1979-11-30 Circuit integre a transistors mos protege contre l'analyse et carte comprenant un tel circuit

Country Status (3)

Country Link
US (1) US4434361A (enExample)
DE (1) DE3044983A1 (enExample)
FR (1) FR2471051A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0169941A1 (de) * 1984-07-31 1986-02-05 Siemens Aktiengesellschaft Monolithisch integrierte Halbleiterschaltung
FR2569054A1 (fr) * 1984-08-10 1986-02-14 Eurotechnique Sa Dispositif de neutralisation de l'acces a une zone a proteger d'un circuit integre
EP0221351A1 (de) * 1985-10-22 1987-05-13 Siemens Aktiengesellschaft Integrierte Halbleiterschaltung mit einem elektrisch leitenden Flächenelement
WO1989003124A1 (en) * 1987-09-24 1989-04-06 Hughes Aircraft Company Method and apparatus for securing integrated circuits from unauthorized copying and use
FR2772967A1 (fr) * 1997-12-18 1999-06-25 Sgs Thomson Microelectronics Cellule de memoire eeprom protegee

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3435506A1 (de) * 1984-09-27 1986-04-03 Siemens AG, 1000 Berlin und 8000 München An einem gegenstand zur markierung angebrachte anordnung mit einem informationsspeicher
DE3602960C1 (de) * 1986-01-31 1987-02-19 Philips Patentverwaltung Dickschicht-Schaltungsanordnung mit einer keramischen Substratplatte
US5030796A (en) * 1989-08-11 1991-07-09 Rockwell International Corporation Reverse-engineering resistant encapsulant for microelectric device
FR2740553B1 (fr) * 1995-10-26 1997-12-05 Sgs Thomson Microelectronics Procede de detection de presence de passivation dans un circuit integre
ATE356436T1 (de) * 1998-08-19 2007-03-15 Infineon Technologies Ag Halbleiterchip mit oberflächenabdeckung gegen optische untersuchung der schaltungsstruktur
DE10058078C1 (de) * 2000-11-23 2002-04-11 Infineon Technologies Ag Integrierte Schaltungsanordnung mit Analysierschutz und Verfahren zur Herstellung der Anordnung
JP4365326B2 (ja) * 2003-01-03 2009-11-18 アメリカン エクスプレス トラベル リレイテッド サービシーズ カンパニー, インコーポレイテッド 金属を包含したトランザクションカード及びそれを作成する方法
US8033457B2 (en) 2003-01-03 2011-10-11 American Express Travel Related Services Company, Inc. Metal-containing transaction card and method of making the same
US7588184B2 (en) * 2003-01-03 2009-09-15 American Express Travel Related Services Company, Inc. Metal-containing transaction card and method of making the same
US7823777B2 (en) 2003-01-03 2010-11-02 American Express Travel Related Services Company, Inc. Metal-containing transaction card and method of making same
JP2007528121A (ja) * 2003-07-11 2007-10-04 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 機密性を要する半導体製品、特にスマートカード・チップ
JP2009178843A (ja) * 2006-08-22 2009-08-13 Rynne Group Llc 識別カードおよびその識別カードを使用した識別カード取引システム

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2522984A1 (de) * 1975-05-23 1976-12-09 Licentia Gmbh Elektronischer koppelpunktbaustein
US4067099A (en) * 1975-09-05 1978-01-10 Hitachi, Ltd. Method of forming passivation film
DE2713936A1 (de) * 1977-03-29 1978-10-12 Siemens Ag Verfahren zum herstellen einer halbleitervorrichtung

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3518494A (en) 1964-06-29 1970-06-30 Signetics Corp Radiation resistant semiconductor device and method
US3868057A (en) 1971-06-29 1975-02-25 Robert C Chavez Credit card and indentity verification system
US4221240A (en) 1978-09-29 1980-09-09 Air Conditioning Corporation Apparatus and method for absorbing moisture removed from fluid-jet loom

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2522984A1 (de) * 1975-05-23 1976-12-09 Licentia Gmbh Elektronischer koppelpunktbaustein
US4067099A (en) * 1975-09-05 1978-01-10 Hitachi, Ltd. Method of forming passivation film
DE2713936A1 (de) * 1977-03-29 1978-10-12 Siemens Ag Verfahren zum herstellen einer halbleitervorrichtung

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0169941A1 (de) * 1984-07-31 1986-02-05 Siemens Aktiengesellschaft Monolithisch integrierte Halbleiterschaltung
FR2569054A1 (fr) * 1984-08-10 1986-02-14 Eurotechnique Sa Dispositif de neutralisation de l'acces a une zone a proteger d'un circuit integre
EP0172108A1 (fr) * 1984-08-10 1986-02-19 Sgs-Thomson Microelectronics S.A. Dispositif de neutralisation de l'accès à une zone à protéger d'un circuit intégré
EP0221351A1 (de) * 1985-10-22 1987-05-13 Siemens Aktiengesellschaft Integrierte Halbleiterschaltung mit einem elektrisch leitenden Flächenelement
WO1989003124A1 (en) * 1987-09-24 1989-04-06 Hughes Aircraft Company Method and apparatus for securing integrated circuits from unauthorized copying and use
FR2772967A1 (fr) * 1997-12-18 1999-06-25 Sgs Thomson Microelectronics Cellule de memoire eeprom protegee
EP0926737A3 (en) * 1997-12-18 1999-07-14 STMicroelectronics S.r.l. A screened EEPROM cell
US6151245A (en) * 1997-12-18 2000-11-21 Stmicroelectronics, S.R.L. Screened EEPROM cell

Also Published As

Publication number Publication date
DE3044983A1 (de) 1981-09-03
FR2471051B1 (enExample) 1983-06-24
US4434361A (en) 1984-02-28

Similar Documents

Publication Publication Date Title
FR2471051A1 (fr) Circuit integre a transistors mos protege contre l'analyse et carte comprenant un tel circuit
EP0343030B1 (fr) Circuit imprimé souple, notamment pour carte à microcircuits électroniques, et carte incorporant un tel circuit
US6407780B1 (en) Thin-film transistor substrate using aluminum to form low-resistance interconnection and liquid crystal display device using the same
KR100299381B1 (ko) 고개구율 및 고투과율을 갖는 액정표시장치 및 그 제조방법
JP4791635B2 (ja) シリサイド層を用いてリバースエンジニエアリングから集積回路を保護する方法および装置
JPH0817759A (ja) 半導体装置およびその製造方法
KR950015799A (ko) 플래시메모리 및 그 제조방법
CN1144400A (zh) 带有焊接区的半导体装置及其制造方法
FR2697923A1 (fr) Structure de ligne de signaux pour un affichage à cristaux liquides à transistor à couches minces et procédé pour sa fabrication.
FR2714528A1 (fr) Structure de test de circuit intégré.
US4219827A (en) Integrated circuit with metal path for reducing parasitic effects
FR2759493A1 (fr) Dispositif de puissance a semiconducteur
FR2707041A1 (en) Semiconductor configuration and method of manufacturing it
EP0172108B1 (fr) Dispositif de neutralisation de l'accès à une zone à protéger d'un circuit intégré
EP0299894B1 (fr) Procédé et structure de prise de contact sur des plots de circuit intégré
FR2776124A1 (fr) Dispositif semiconducteur a diode et procede de fabrication
US4923825A (en) Method of treating a semiconductor body
US4972240A (en) Vertical power MOS transistor
KR100333107B1 (ko) 반도체장치
JPH02504448A (ja) TiSi2ローカル・インターコネクト
FR2633141A1 (fr) Carte a puce avec ecran de protection
JPH0393276A (ja) 半導体記憶装置及びその製造方法
US6307263B1 (en) Integrated semiconductor chip with modular dummy structures
JPS5950105B2 (ja) 半導体装置
US20200018716A1 (en) Humidity sensor and method of manufacturing same

Legal Events

Date Code Title Description
ST Notification of lapse