FR2464565A1 - Pile solaire au silicium amorphe - Google Patents
Pile solaire au silicium amorphe Download PDFInfo
- Publication number
- FR2464565A1 FR2464565A1 FR8018761A FR8018761A FR2464565A1 FR 2464565 A1 FR2464565 A1 FR 2464565A1 FR 8018761 A FR8018761 A FR 8018761A FR 8018761 A FR8018761 A FR 8018761A FR 2464565 A1 FR2464565 A1 FR 2464565A1
- Authority
- FR
- France
- Prior art keywords
- layer
- amorphous silicon
- type
- silicon carbide
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 14
- 239000000463 material Substances 0.000 title description 7
- 238000013532 laser treatment Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 43
- 239000011521 glass Substances 0.000 claims abstract description 10
- 230000000694 effects Effects 0.000 claims abstract 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 24
- 239000004033 plastic Substances 0.000 claims description 9
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 229910001220 stainless steel Inorganic materials 0.000 abstract 1
- 239000010935 stainless steel Substances 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910015900 BF3 Inorganic materials 0.000 description 2
- 229910001339 C alloy Inorganic materials 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 241000219289 Silene Species 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052918 calcium silicate Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- -1 ethylene Chemical class 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 210000002457 barrier cell Anatomy 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
- C23C26/02—Coating not provided for in groups C23C2/00 - C23C24/00 applying molten material to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB7930141A GB2030766A (en) | 1978-09-02 | 1979-08-30 | Laser treatment of semiconductor material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR2464565A1 true FR2464565A1 (fr) | 1981-03-06 |
Family
ID=10507509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8018761A Pending FR2464565A1 (fr) | 1979-08-30 | 1980-08-29 | Pile solaire au silicium amorphe |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS5664476A (de) |
| DE (1) | DE3032158A1 (de) |
| FR (1) | FR2464565A1 (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0042868A1 (de) * | 1979-12-26 | 1982-01-06 | GIBBONS, James F. | Amorphe sonnenzellen und deren verfahren |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5795677A (en) * | 1980-12-03 | 1982-06-14 | Kanegafuchi Chem Ind Co Ltd | Amorphous silicon type photoelectric tranducer |
| JPS57104276A (en) * | 1980-12-19 | 1982-06-29 | Kanegafuchi Chem Ind Co Ltd | Amorphous silicon thin film photoelectric element |
| JPS56116673A (en) * | 1980-02-19 | 1981-09-12 | Sharp Corp | Amorphous thin film solar cell |
| JPS57126175A (en) * | 1981-01-29 | 1982-08-05 | Kanegafuchi Chem Ind Co Ltd | Amorphous silicon carbide/amorophous silicon hetero junction optoelectric element |
| JPS5853869A (ja) * | 1981-09-26 | 1983-03-30 | Semiconductor Energy Lab Co Ltd | 光電変換装置作製方法 |
| JPS58156640U (ja) * | 1982-04-16 | 1983-10-19 | 凸版印刷株式会社 | 押出チユ−ブ容器 |
| US4453173A (en) * | 1982-04-27 | 1984-06-05 | Rca Corporation | Photocell utilizing a wide-bandgap semiconductor material |
| US6664566B1 (en) | 1982-08-24 | 2003-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
| USRE37441E1 (en) | 1982-08-24 | 2001-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
| US5468653A (en) * | 1982-08-24 | 1995-11-21 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
| JPS5954275A (ja) * | 1982-09-22 | 1984-03-29 | Sanyo Electric Co Ltd | 光起電力装置 |
| US4532537A (en) * | 1982-09-27 | 1985-07-30 | Rca Corporation | Photodetector with enhanced light absorption |
| JPS59101879A (ja) * | 1982-12-02 | 1984-06-12 | Fuji Electric Corp Res & Dev Ltd | 薄膜太陽電池 |
| JPS59101880A (ja) * | 1982-12-03 | 1984-06-12 | Fuji Electric Corp Res & Dev Ltd | 薄膜太陽電池 |
| JPS59130483A (ja) * | 1982-12-24 | 1984-07-27 | Ricoh Co Ltd | 薄膜太陽電池 |
| JPS59125669A (ja) * | 1983-01-07 | 1984-07-20 | Agency Of Ind Science & Technol | 太陽電池 |
| GB2137810B (en) * | 1983-03-08 | 1986-10-22 | Agency Ind Science Techn | A solar cell of amorphous silicon |
| JPS6030180A (ja) * | 1983-07-28 | 1985-02-15 | Matsushita Electric Ind Co Ltd | 非晶質薄膜光起電力素子 |
| JPS6037788A (ja) * | 1983-08-10 | 1985-02-27 | Agency Of Ind Science & Technol | 太陽電池 |
| JPS6043869A (ja) * | 1983-08-19 | 1985-03-08 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| US4528418A (en) * | 1984-02-24 | 1985-07-09 | Energy Conversion Devices, Inc. | Photoresponsive semiconductor device having a double layer anti-reflective coating |
| US4542256A (en) * | 1984-04-27 | 1985-09-17 | University Of Delaware | Graded affinity photovoltaic cell |
| EP0168132A3 (de) * | 1984-05-14 | 1987-04-29 | Energy Conversion Devices, Inc. | Statisches Feld induzierter Halbleiterstrukturen |
| JPS63102275A (ja) * | 1986-10-20 | 1988-05-07 | Taiyo Yuden Co Ltd | 非晶質半導体太陽電池 |
| JPS6382958U (de) * | 1986-11-18 | 1988-05-31 | ||
| JP2634812B2 (ja) * | 1987-03-31 | 1997-07-30 | 鐘淵化学工業 株式会社 | 半導体装置 |
| JP2634811B2 (ja) * | 1987-03-31 | 1997-07-30 | 鐘淵化学工業 株式会社 | 半導体装置 |
| JP3047666B2 (ja) * | 1993-03-16 | 2000-05-29 | 富士電機株式会社 | シリコンオキサイド半導体膜の成膜方法 |
| JP2648733B2 (ja) * | 1993-11-18 | 1997-09-03 | プラズマ・フィジクス・コーポレーション | 半導体装置 |
| US7199303B2 (en) * | 2000-03-13 | 2007-04-03 | Sony Corporation | Optical energy conversion apparatus |
| DE102009036702A1 (de) | 2009-08-07 | 2011-02-17 | Kdg Mediatech Ag | Solarzelle |
-
1980
- 1980-08-26 DE DE19803032158 patent/DE3032158A1/de not_active Withdrawn
- 1980-08-28 JP JP11899680A patent/JPS5664476A/ja active Pending
- 1980-08-29 FR FR8018761A patent/FR2464565A1/fr active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0042868A1 (de) * | 1979-12-26 | 1982-01-06 | GIBBONS, James F. | Amorphe sonnenzellen und deren verfahren |
| EP0042868A4 (de) * | 1979-12-26 | 1982-02-05 | James F Gibbons | Amorphe sonnenzellen und deren verfahren. |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5664476A (en) | 1981-06-01 |
| DE3032158A1 (de) | 1981-04-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| FR2464565A1 (fr) | Pile solaire au silicium amorphe | |
| US6459034B2 (en) | Multi-junction solar cell | |
| EP1265297B1 (de) | Herstellungsverfahren für einen LICHTENERGIEWANDLER | |
| US9577137B2 (en) | Photovoltaic cells with multi-band gap and applications in a low temperature polycrystalline silicon thin film transistor panel | |
| US8519435B2 (en) | Flexible photovoltaic cells having a polyimide material layer and method of producing same | |
| KR20070119702A (ko) | 태양 전지 | |
| FR2526223A1 (fr) | Alliages perfectionnes de silicium amorphe contenant de l'oxygene a large intervalle de bande et de type p, et dispositifs pour les utiliser | |
| TW201011923A (en) | Photovoltaic cells of Si-nanocrystals with multi-band gap and applications in a low temperature polycrystalline silicon thin film transistor panel | |
| EP0001374B1 (de) | Metallbasistransistor mit unkristallinischen Dünnschichten aus Halbleitern | |
| US20150295099A1 (en) | High work-function buffer layers for silicon-based photovoltaic devices | |
| KR100681162B1 (ko) | 반도체 장치 및 그 제조 방법 | |
| WO2008074875A2 (fr) | Heterojonction a interface intrinsequement amorphe | |
| EP3011602B1 (de) | Solarzelle mit einem silikonheteroübergang | |
| EP0007878B1 (de) | Photoelektrischer Generator | |
| EP0229574A1 (de) | Photovoltaischer HgCdTe-Heteroübergang-Detektor und Verfahren zu seiner Herstellung | |
| EP2898543B1 (de) | Verfahren zur herstellung einer pv-zelle mit heteroübergang | |
| US20110215434A1 (en) | Thin-film photoelectric conversion device and method of manufacturing thin-film photoelectric conversion device | |
| US8518833B2 (en) | Transparent electroconductive oxide layer and photoelectric converter using the same | |
| FR3042645B1 (fr) | Procede de fabrication d'une cellule photovoltaique a heterojonction | |
| US20100147380A1 (en) | Hybrid Photovoltaic Cell Using Amorphous Silicon Germanium Absorbers and Wide Bandgap Dopant Layers | |
| EP0033429A2 (de) | Photovoltaische Zelle, die zur Herstellung von Solargeneratoren verwendbar ist | |
| Mohammad | The effects of fabrication prameters and electroforming phenomenon on CdTe/Si (p) heterojunction photovoltaic solar cell | |
| JPS63318166A (ja) | 光起電力装置 | |
| EP3069386B1 (de) | Rückkontaktsubstrat für eine photovoltaische zelle | |
| FR3031240A3 (fr) | Substrat conducteur pour cellule photovoltaique |