TW201011923A - Photovoltaic cells of Si-nanocrystals with multi-band gap and applications in a low temperature polycrystalline silicon thin film transistor panel - Google Patents

Abstract

One aspect of the present invention relates to a photovoltaic cell. In one embodiment, the photovoltaic cell includes a first conductive layer, an N-doped semiconductor layer formed on the first conductive layer, a first silicon layer formed on the N-doped semiconductor layer, a nanocrystalline silicon (nc-Si) layer formed on a first silicon layer, a second silicon layer formed on the nc-Si layer, a P-doped semiconductor layer on the second silicon layer, and a second conductive layer formed on the P-doped semiconductor layer, where one of the first silicon layer and the second silicon layer is formed of amorphous silicon, and the other of the first silicon layer and the second silicon layer formed of polycrystalline silicon.

Description

201011923 VI. Description of the Invention: [Technical Field] The present invention relates generally to a photovoltaic cell, and more particularly to a photovoltaic cell having a photoelectric conversion layer having multiple energy gaps, and a low temperature polycrystalline germanium transistor transistor; (LTPS-TFT) , Klow temperature polycrystalline silicon thin film transistor") or amorphous silicon thin film transistor (a-Si TFT, "amorphous silicon thin film transistor") panel application. [Prior Art] ® a solar cell or photovoltaic cell belongs to A semiconductor device that converts solar energy/light energy into electrical energy. In general, a solar cell is configured as a large-area PN junction made of tantalum, which has a layer of N-type (negative) and a layer of The layer N is in direct contact with the P-type (positive type). When a photon strikes the solar cell, the photon can pass directly through the crucible (if the photon has low light energy) or is reflected from the surface, or is Absorption (if the photon's light energy is higher than the 矽 energy gap value). According to the frequency band structure of the solar cell, the latter generates an electric Sub-hole pairing and some heat. Due to the interface electric field of the PN junction, the hole generated is moved toward the anode of the P-type layer, and the generated electrons are directed toward the N-type layer in the germanium solar cell. The cathode moves, thereby generating electrical energy. Materials used for solar cells include germanium, germanium-V semiconductors (such as GaAs), II-VI semiconductors (such as CdS/CdTe), organic/polymer materials, and others. The most commonly developed are solar cells containing single crystal germanium wafer solar cells, polycrystalline germanium (p〇ly-Si) thin film solar cells, and amorphous germanium (a-Si) thin films, solar cells. Group semiconductor solar cells are formed on germanium (Ge) substrates and have high efficiency, but are very expensive, so they are only used in satellite and integrated optics, because most of this cost is used in the 201011923

Ge substrate. In addition, III-V and II-VI semiconductor solar cells cannot be easily integrated with germanium-based CMOS and thin film transistor liquid crystal display (TFT-LCD) glass panels and low temperature polysilicon (LTPS) processing. Furthermore, the manufacture of III-V and II-VI: family semiconductor solar cells has serious metal contamination problems. Although the cost of amorphous: tantalum thin film solar cells is not high, efficiency and stability are not high. Therefore, wafer solar cells have become the mainstay of the solar cell market. Solar cells are energy conversion devices, so conversion efficiency is limited by the Camot Limit, which is about 85%. So far, the highest conversion efficiency achieved by solar cells on the market is about 33%. Therefore, there is room for improvement in the efficiency of these solar cells. Theoretically, photons with energies below the energy gap of the absorbing material are not absorbed by the material to create an electron hole pairing so that their energy cannot be converted through the absorbing material. For photons with energies above the energy gap, only some of the energy above the energy gap can be converted into a useful electron hole paired output. When a more energetic photon is absorbed, excess energy above the energy gap is converted into the kinetic energy of the carrier combination. These excessive kinetic energy is converted into heat through photon interaction as the kinetic energy of the carriers slows down to equilibrium speed. The solar spectrum is close to the black body frequency spectrum of approximately 6000 K, and most of the solar radiation reaching the Earth consists of photons with energy greater than the chirp gap (矽 band gap). These higher energy photons will be absorbed by the solar cell, but the energy difference between these photons and the chirp gap will be converted into heat through lattice vibrations (phonons) rather than being converted into usable electrical energy. For a single bonded (single band gap) solar cell, the theoretical maximum conversion efficiency is approximately 28%. However, ~ because the material cannot absorb all the essential limitations of photons whose energy is higher than the energy gap, and * and because the free carrier absorption of these materials limits the photon absorption to 100% conversion into electron hole pairing, the market is single The average conversion efficiency of wafer and polycrystalline germanium (p〇ly-Si) solar cells is only about 15%. 4 201011923 For multi-junction (or multiple-gap) solar cells, the individual single-junction solar cells are stacked in descending order of energy gap, and the top-most cells draw the high-energy photons and pass the lower energy gap. The remaining photons to be absorbed by the battery. Use more: Heavy energy gap (or multi-junction) can reduce the energy relationship between the bands, thus reducing the possibility of generating photons compared to a single (single band gap) solar cell, thereby reducing heat generation and improving the photoelectric Conversion efficiency. However, such tandem solar cells have problems with junction loss and lattice mismatch. Therefore, the problem to be solved in the technology to date is to solve the above defects and incompleteness. [Explanation] Recently, because of the high photoelectric efficiency and the wavelength adjustability of nanostructured light absorption, attention has been focused on quantum dot solar cells, that is, second generation solar cells. For a solar cell using germanium, an indirect gap semiconductor has developed a quantum C〇nfinement effect using a nanostructure. In order to obtain a crystalline or amorphous a-Si nanostructure of less than 5 nm, such as the quantum confinement effect produced by quantum wells, quantum wires and quantum dots, it is necessary to use materials with energy levels greater than the order of magnitude as a matrix (material) Base) or barrier. I know that as the nanostructure size becomes smaller, the wavelength of light becomes shorter. Among these two nanostructures, quantum dot structures have the advantage of high quantum efficiency. For the Shixi quantum dot solar cell, these Shixi quantum dots are usually embedded in the dielectric matrix, such as oxygen cut (Si()x), nitrided carbide, carbonized carbide (SiCz), etc. Dream quantum dots can provide a wide multiple energy gap (approximately (I π to 1.2 eV) structure. The invention - aspects relate to a photovoltaic cell or solar cell. In one embodiment, the photocell includes a first conductive a layer; an N-type doped semiconductor layer formed on the first conductive layer 201011923; a first germanium layer formed on the n-type doped semiconductor layer; and a nanocrystalline germanium formed on the first germanium layer a nc_Si) layer; a second germanium layer formed on the nanocrystalline germanium layer; a p-type doped semiconductor layer formed on the second germanium layer; and a first layer formed on the p-type doped semiconductor layer Two conductive layers. In one embodiment, both the first germanium layer and the second germanium layer are formed of amorphous germanium (a-Si), and both the first germanium layer and the second germanium layer The other of them is formed of poly-Si. The doped semiconductor layer is formed of N-type doped germanium. And wherein the P-type doped semiconducting germanium layer is formed by p-type doped germanium. The nanocrystalline germanium layer has a plurality of germanium crystal germanium, and the germanium crystal size is in the range of about l-20 nm. At least one of the first conductive layer and the second conductive layer is formed of a transparent conductive material, and the transparent conductive material may be indium tin oxide (IT〇), indium zinc oxide (ΙΖΟ), aluminum zinc. Oxide (ΑΖ0), yttrium oxide (Hf〇) or a combination of these compounds. In another embodiment, the present invention relates to a method of fabricating a photovoltaic cell. In an integrated embodiment, the method comprises the steps of: providing a substrate Forming a -first conductive layer on the substrate - forming an -N type doped semiconductor layer on the first conductive layer; forming a first germanium layer on the N type doped semiconductor layer; forming in the first germanium layer - nanocrystalline crystal; formed on the nanojunction (four) layer [the second layer forms a -P hetero semiconductor layer on the second layer; and a second conductive layer is formed on the p-type conductor layer The step of forming the nanocrystalline germanium layer in a specific embodiment comprises on the first layer Into a secret Fubon i-) a dielectric layer, and laser annealing Xi-rich rock layer to form a plurality of silicon nanocrystals therein. 201011923 In a specific embodiment, the N-type doped semiconductor layer is formed of a doped ytterbium, and the P-type doped semiconductor layer is formed of a p-type doped yttrium. The nanocrystalline ruthenium layer has a plurality of ruthenium crystals, and the crystal size of the ruthenium nanocrystal is in the range of about l-20 nm. One of the first tantalum layer and the second tantalum layer is formed of amorphous germanium: and the other is formed of polycrystalline germanium. At least one of the first conductive layer and the second conductive layer is formed of a transparent conductive material. The transparent conductive material may be indium tin oxide (IT〇), indium oxide (ΙΖΟ), aluminum zinc oxide (ΑΖ0), lanthanum oxide (Hf0) or a combination of these compounds. Another aspect of the invention relates to a photovoltaic cell. In a specific embodiment, the photovoltaic cell has a first conductive layer, a second conductive layer, and a photoelectric conversion layer, wherein the photoelectric conversion layer is formed between the first conductive layer and the second conductive layer. The photoelectric conversion layer has a multiple energy gap. At least one of the first conductive layer and the second conductive layer is formed of a transparent conductive material. In a specific embodiment, the photovoltaic cell further has an N-type doped semiconductor layer and a 掺杂-type doped semiconductor layer N-type doped semiconductor layer formed between the first conductive layer and the photoelectric conversion layer, P-type doping A semiconductor layer is formed between the second conductive layer and the photoelectric conversion layer. In a specific embodiment, the photoelectric conversion layer comprises an amorphous germanium layer, a poly-Si layer, and a dielectric layer formed between the amorphous germanium layer and the poly germanium layer. Floor. The material of the combination of the ytterbium-rich dielectric layer may be a cerium-rich oxide, a cerium-rich nitride, a cerium-rich oxynitride, a cerium-rich carbide or a combination of these compounds. The ruthenium-rich dielectric layer comprises a nanocrystalline ruthenium layer having a plurality of ruthenium crystals, wherein the ruthenium crystal size is within a range of about 〇2〇11111. In another embodiment, the photoelectric conversion layer comprises a first ytterbium-rich dielectric layer formed on the first conductive layer 7 201011923 and having a refractive index 帛n1, and formed on the first ytterbium-rich dielectric layer A second ruthenium-rich dielectric layer having a refractive index n2 wherein n2 < n1. In a specific embodiment, the photoelectric conversion layer may further include a third ytterbium-rich dielectric layer formed between the second fluorite dielectric layer and the second conductive layer and having a refractive index β, wherein n3 <N2<nb, the dielectric layer, the second rich dielectric layer and the third rich dielectric layer may be composed of rich dream oxide, Changshixi nitride, rich crystal oxide, rich dream carbonization Or a combination of these compounds. In other embodiments, the photoelectric conversion layer also includes an amorphous germanium layer

And a polycrystalline (tetra)'-rich material layer and a second rich dielectric layer are formed between the aragonite layer and the polycrystalline layer. Another aspect of the invention relates to a method of making a photovoltaic cell. In a specific embodiment, the method includes: providing a substrate; forming a first conductive layer on the substrate; forming a photoelectric conversion layer on the first conductive layer, wherein the photoelectric conversion layer has a multiple energy gap; And the step of forming a second conductive layer on the photoelectric conversion layer. Further, the method further includes forming an -N-type doped semiconductor layer between the first conductive layer and the photoelectric conversion layer and at the second conductive The steps of forming a P-type doped semiconductor layer with the photoelectric conversion layer. In a specific embodiment, the step of forming the photoelectric conversion layer comprises forming a first germanium layer on the first conductive layer, forming a germanium rich interfacial layer on the first germanium layer, and forming on the rich dielectric layer. A second layer of enamel. The first layer and the second layer are both - amorphous (four) and the other - polycrystalline layer. The step of forming the germanium-rich dielectric layer further includes laser annealing the germanium-rich dielectric layer to form a plurality of germanium crystals therein. In another embodiment, the step of forming the photoelectric conversion layer comprises forming a first rich dielectric layer on the first conductive layer and having a refractive index n1 to 8 201011923 and in the first rich dielectric layer A second ytterbium-rich dielectric layer is formed thereon and having a refractive index n2. In a specific embodiment, the step of forming the photoelectric conversion layer further includes a third rich dielectric layer formed between the second ruthenium-rich dielectric layer and the second conductive layer and having a refractive index n3, wherein n3<;n2<nl. Another aspect of the invention relates to a liquid crystal display panel (LCD panel) that is operatively operable by a liquid crystal display driver and that can be illuminated by a backlight. In a specific embodiment, the liquid crystal display panel has a display area for displaying related information, and a photocell placed in an area surrounding the display area and exposed to a light to convert the optical energy of the light. The electric energy is supplied to the liquid crystal display driver as a driving power. The photovoltaic cell includes a first conductive layer, a second conductive layer, and a photoelectric conversion layer formed between the first conductive layer and the second conductive layer, wherein the photoelectric conversion layer has a multiple energy gap. In one embodiment, the display region has a plurality of low temperature polycrystalline silicon thin film transistors (LTPS-TFTs) or amorphous silicon thin films (a-Si TFTs). Film transistor" ) ° In one embodiment, the photoelectric conversion layer comprises an amorphous layer, a polysilicon layer, and a germanium-rich dielectric layer formed between the amorphous layer and the polysilicon layer. The germanium dielectric layer is formed of a material comprising a germanium-rich oxide, a germanium-rich nitride, a germanium-rich nitrogen oxide, a germanium-rich carbide, or a combination thereof. In one embodiment, the germanium-rich dielectric layer comprises a The nanocrystalline crystalline layer has a plurality of nanocrystalline crystals having a crystal size ranging from about 1 to 20 nm. In other embodiments, the photoelectric conversion layer is included in the first conductive layer. a first germanium-rich dielectric layer formed on the layer and having a refractive index nl, and a second rich dielectric formed on the first rich layer 9 201011923 dream dielectric layer and having a refractive index n2.. Wherein n2 <nl. The photoelectric conversion layer may further have a third rich dielectric layer formed between the second germanium-rich dielectric layer and the first conductive layer and having a refractive index n3, wherein n3 < n2 < nl » In one aspect, the invention relates to a method of fabricating a liquid crystal display panel that can be driven by a liquid crystal display driver and that can be illuminated by a backlight. In one embodiment, the method includes providing a substrate; forming a display on the substrate And forming a photocell in a region surrounding the display region on the substrate and exposing it to light. When the optical energy of the light is received, the photocell converts the optical energy into electrical energy, and the electrical energy is supplied to The liquid crystal display driver acts as a driving power. The step of forming the photovoltaic cell includes: forming a first conductive layer to form a first conductive layer; and forming a photoelectric conversion layer between the first conductive layer and the second conductive layer, wherein the The photoelectric conversion layer has a multiple energy gap. In the embodiment, the step of forming the photoelectric conversion layer includes forming a first layer on the first conductive layer a germanium layer, a germanium-rich dielectric layer formed on the first germanium layer, and a second (four) formed on the laser-annealed power-rich layer. The first layer and the second layer are both included - amorphous (four), and further comprising a polycrystalline layer. In a specific embodiment, the step of forming the rich dielectric layer further comprises laser annealing the 0 dielectric layer to form a complex number therein (4) In other time-varying embodiments, (4) forming the photoelectric conversion layer comprises a first rich-rich dielectric layer formed on the conductive layer of germanium and having a refractive index n1" = a rich! Forming on the dielectric layer and having a refractive index - the second "dream dielectric layer" of the second conductive layer has a second step in the second (four) electrical layer, wherein n3 <rnf refractive index Π 3 of a: 201011923 Another aspect of the invention relates to a display panel having a plurality of pixels arranged in a matrix. Each pixel includes an active area for displaying related information, a switching area having one or more switching elements, and a a photocell formed between the region and the switching region, wherein the photovoltaic cell has a photoelectric conversion layer having a multiple energy gap. In a specific embodiment, the photoelectric conversion layer comprises an amorphous germanium layer, a poly germanium layer, and a germanium-rich dielectric layer formed between the amorphous germanium layer and the polysilicon layer. The germanium-rich dielectric layer comprises a nanocrystalline germanium layer having a plurality of germanium crystals having a size in the range of about 1-20 nm. Another aspect of the invention relates to a method of fabricating a display panel. In one embodiment, the method includes: providing a substrate; and forming a plurality of pixels in a matrix on the substrate Each of the pixels includes a photovoltaic cell having a photoelectric conversion layer having a plurality of energy gaps. In one embodiment, the method of forming the plurality of pixels includes the steps of: (a) forming a plurality of electrodes a gate coupled to the gate line of the substrate, the plurality of gates are spatially separated from each other, and an active region, a switching region, and a photocell are defined between each pair of adjacent gates; (b) at the plurality Forming a gate insulating layer on the gate and the remaining region of the substrate; (c) forming an amorphous germanium layer on the gate insulating layer and covering each gate in each switching region; (d) in the non- Forming a doped amorphous germanium layer on the germanium layer; (e) forming a first conductive layer on the doped amorphous germanium layer and remaining regions of the gate insulating layer; Depositing a germanium-rich dielectric layer covering each photocell region; (g) forming a source and a drain in each switching region, thereby forming an array of field effect transistors on the substrate; Forming a cover field on the first conductive layer a body array and a passive layer of the ytterbium-rich dielectric layer; (i) a channel in contact with the switching region and the photocell region; and (j) a region between the switching region 11 201011923 and the photocell region Forming a second conductive layer having a first portion on the region such that the first portion contacts the drain of the field effect transistor through the channel in each switching region and contacts the 矽-rich dielectric layer in the photocell region The second part. The step of forming the plurality of pixels further comprises laser annealing the germanium-rich dielectric layer to form a plurality of nano-crystal cells therein. In a specific embodiment, the gate insulating layer is made of yttrium oxide, The germanium nitride or the ytterbium oxynitride layer is formed. The doped amorphous germanium layer comprises an n+ doped amorphous germanium or a doped amorphous germanium. A dielectric material forming the passive layer may comprise germanium oxide or nitride. dream. At least one of the first conductive layer and the second conductive layer is transparent. In a specific embodiment, the second conductive layer may be composed of indium tin oxide (IT〇), indium zinc oxide (ΙΖΟ), aluminum zinc oxide (ΑΖ〇), lanthanum oxide (Hf〇) or a combination of these compounds. To form. From the squats, the preferred embodiment of the invention, in conjunction with the description of the drawings, will be understood as a basis for the present invention, but may be varied and modified without the spirit and scope of the innovative concepts disclosed. [Embodiment] In the following illustrative examples only, :::: Many changes and modifications will be apparent to those skilled in the art. It will be described in detail here: The same component has::=. Referring to the drawings, the same reference numerals are used in the drawings, unless the meaning of ":" is used. It is not clear that (4) and (4) the whole material (4) is used for discussion. Except for this = the meaning of the meeting includes a more specific definition of certain words used in this specification. 12 201011923 As used herein, "about" or "about" generally means within 20 percent of the known value or range, preferably within 1%, more preferably within 5 percent. The quantity given is an approximate value, which means that if it is not clearly indicated, it can be inferred to be a word such as "big V" or "about". As used herein, "solar battery" and "photovoltaic cell" as used in this specification are synonymous with each other, and means a device that converts solar energy/light energy into electricity using the photoelectric effect. Many abbreviations and abbreviations are used here. "nc-Si" is a nanocrystal, "a_Si" φ is an amorphous dream, "P〇ly-Si" is a polycrystalline dream, and "Si-rich" is a rich eve. "LTPS" is low-temperature polysilicon, "TFT" is a thin film transistor, r pecvd" is plasma-enhanced chemical vapor deposition, "ELA" is excimer laser annealing, and "CLC" is continuous-wave laser crystallization. Specific embodiments of the present invention will be described in detail herein with reference to Figures 1 through 14. In accordance with the purpose of the present invention, as embodied and broadly described herein, in one aspect, the present invention is directed to a photovoltaic cell having a multi-band gap and a low-energy gap and its low temperature Applications in polycrystalline ruthenium film transistor (LTPS-TFT) panels. Referring to Figure 1, there is shown a photovoltaic cell 100 in accordance with an embodiment of the present invention. In this exemplary embodiment, the photovoltaic cell 1 has a first conductive layer 110, a rich-rich dielectric layer 140 formed on the first conductive layer 110, and one formed on the germanium-rich dielectric layer 14 The second conductive layer 17〇. The ruthenium rich dielectric layer 140 can be deposited by PECVD. In the ruthenium-rich dielectric deposition process, the ratio of tetrahydrogen hydride (SiH4) to nitrous oxide (N20) (or ammonia NH3 or nitrogen N2) gas is adjusted to obtain a desired refractive index range. Among them, the range of refractive index indicates the degree of enrichment of ruthenium in the film. Using appropriate laser annealing, the excess germanium atoms in the germanium-rich dielectric layer 140 are separated, aggregated and converted into a nanocrystalline crystal 13 201011923 body to form a nanocrystalline crystalline germanium dielectric layer (nanocrystalline germanium layer). . Thus, a germanium-rich dielectric layer of germanium crystals 145 having different refractive indices (1.6_3.7), different thicknesses (5 〇 _5 〇〇 nm), and different sizes (1-20 nm) can be produced. Due to the change of the melting point of different semiconductor materials and the energy absorption efficiency grade, a plurality of laser-induced nanocrystals can be formed by using a laser crystallized polycrystalline or amorphous film. Therefore, the laser crystallization process constructs a multiple energy gap light absorbing structure that allows the photovoltaic cell 100 to absorb light having a wavelength range of about 3 〇〇 1 〇〇〇 nm. The Fu Shi Xi dielectric layer 140 is composed of a combination of materials containing cerium-rich oxide (Si〇x), cerium-rich nitride (SlNy), cerium-rich oxynitride (SiOxNy), cerium-rich carbide (siCz) or the like. Formed, where 〇<χ<2, 〇<y<1 34 and 〇<ζ<ι. The ruthenium-rich dielectric layer 140 can be formed in a single layer or a multilayer structure. The ruthenium-rich dielectric layer 140 includes at least one of a ruthenium-rich oxide film, a ruthenium-rich nitride film, and a dream-rich nitrogen oxide film, whether it is a single layer or a multilayer structure. The first conductive layer 110 and the second conductive layer 170 may be formed of a metal, a metal oxide, or any combination of these materials. The material may be any combination of copper, silver, gold, chin, turn, bell, group, ruthenium, crane, alloy, other or a combination or alloy of the two materials. The metal oxide may be a transparent conductive material, and includes indium tin oxide (ITO), indium oxide (IZO), aluminum zinc oxide (AZO), hafnium oxide (Hf), and the like. The material can be a combination of the refractive materials and the transparent conductive materials. In practice, at least the first conductive layer and the second conductive layer are made of a transparent conductive material such as IT〇, IZ〇, AZ〇, Hf〇 or the like. The transparent conductive material allows ambient light (4) to penetrate and reach the rich dielectric layer (photosensitive region). In effect, an interlayer dielectric layer (UHA layer) 180 is formed over the germanium-rich dielectric layer 140. A patterning/masking process is then applied to the uHA layer 18 to define the channels or contact holes 181 therein. The second conductive layer 17 is formed through the via or contact 14 201011923 via 181 on the germanium-rich dielectric layer 140 compared to a conventional multi-junction (serial) photocell having stacked individual bonded photocells in a decreasing order of energy gap, A single bonded multiple energy gap Si nanocrystalline photovoltaic cell has many advantages. In the multi-junction unit device, the top unit captures the high-energy photons and allows the remaining photons to be absorbed by the lower gap unit to pass through. However, the serially connected photocells have the disadvantages of joint loss and lattice mismatch. Therefore, the photoelectric conversion efficiency is lowered. A photovoltaic cell with multiple energy gap absorbing materials can more efficiently convert the solar spectrum. By using multiple energy gaps, the solar spectrum can be divided into smaller fractions where thermodynamic efficiency is more restrictive for each fraction. Figure 2 illustrates a process for fabricating a photovoltaic cell 200 in accordance with an embodiment of the present invention. First, as shown in Fig. 2A, a germanium-rich dielectric layer 240 is formed on a first conductive layer 21A. Next, the germanium-rich dielectric layer 24 is exposed to the beam of laser 292 to form a plurality of nanocrystals 245 therein, as shown in Figure 2B. Then, a second conductive layer 27 is formed on the germanium-rich dielectric layer 24, as shown in Fig. 2C. Using a plasma enhanced chemical vapor deposition (PECVD) process, a ruthenium-rich dielectric can be formed on the first conductive layer 210 at a low pressure of about 1 torr at a temperature below about 400 °C. Layer 24〇. In one embodiment, the richer dielectric layer 240 can be formed at a temperature in the range of about 200 to 彳(8) 〇c or about 35 〇7 to ’^, preferably at about 370 〇c. For a known temperature range, it takes from about 13 seconds to 250 seconds, preferably from about 25 seconds to 125 seconds, to form a richer dielectric layer 240 having a desired thickness of from about 50 nanometers (nm) to about 1000 nm. During the process of forming the germanium-rich dielectric layer 24, the refractive index of the rich dielectric layer 24〇 can be controlled by adjusting the dream-containing ratio SiH4/N20. In a specific embodiment, the rhodium-containing tree SiH4/N20 is adjusted within a range of from about 1:1 〇 to about 1 〇:1, resulting in a refractive index ranging at least from about 1.47 to about 37, which is 15 The 201011923 ruthenium ratio is preferably in the range of from about 1:5 to about 10:1, resulting in a refractive index ranging from at least about 1.7 to about 3.7. The ruthenium rich dielectric layer 240 can also be formed by other methods or processes. Laser annealing of the germanium-rich dielectric layer 240 can be accomplished, for example, by using excimer laser annealing (ELA). Excimer lasers with adjustable frequencies and adjustable laser power densities can be utilized at temperatures below 400 °C. In a specific embodiment, the ELA is performed at a pressure of about 1 atmosphere (760 Torr) or about 1 x 〇 3 Pa at a temperature below about 400 °C. In other embodiments, the ELA is performed at room temperature, i.e., is about 20-25 °C. The invention may also be practiced with other types of laser annealing having corresponding parameters. The laser wavelength and the laser power level can be adjusted to produce the desired laser induced 矽 nanocrystal diameter. For any laser type 'like EL A, continuous wave laser (LCC), solid state CW green laser, etc., the laser wavelength is in the range of about 266-1024 nm. The laser-induced nanocrystals have a diameter in the range of about 1-20 nm, preferably in the range of about 3-6 nm. In a single embodiment, at a wavelength of about 266-532 nm. In the range, ELA of the germanium-rich dielectric layer 240 is preferably performed at about 308 nm. The ELA of the germanium-rich dielectric layer 240 is typically in the range of laser power intensity of about 70-440 mJ/cm2, preferably laser. The power intensity is performed over a range of about 70-200 mJ/cm 2. In other embodiments, the CLC of the germanium-rich dielectric layer 240 is performed over a range of wavelengths, such as about 532-1024 nm. In other embodiments, The solid state CW green laser of the germanium-rich dielectric layer 240 is performed over a range of wavelengths, for example, about 532 nm. However, when the laser power intensity exceeds about 200 mJ/cm 2 , the germanium-rich dielectric layer 240 The first conductive layer underneath will be damaged or stripped" in order to produce a range of 16 2010 11923 A large laser-induced magneto-ceramic layer 240 of about 4 nm to about 10 nm, so the excimer laser annealing of the germanium-rich dielectric layer 240 is preferably at a laser power intensity of about 200- Executed over a range of 440 mJ/cm2. On the other hand, in order to produce a germanium-rich dielectric layer 240 having a smaller laser-induced Monnae crystal ranging from about 2 nm to about 6 nm, the germanium-rich dielectric layer The ELA of 240 is preferably performed over a range of laser power intensities of about 70-200 mJ/cm 2. The density of the laser-induced nanocrystal 245 in the rich dielectric layer 240 is preferably from about Ixl011/cm2 to about Ixl012. In the range of /cm2. Figure 3 shows the characteristics of the laser-induced nanocrystal: (A) a transmissive electro-microscopic (TEM) image showing the size of the nanocrystals, and (B) The distribution of the nanocrystal size in a laser-induced nanocrystal with a peak tip diameter of about 4 nm. 凊 Referring back to Figure 2C, in this embodiment, the second conductive layer 270 is transparent. When the light 295 is The incident beam passes through the transparent layer 270 and reaches the rich with a plurality of laser-induced broken nanocrystals 245 The electrical layer 240 will absorb beam photons having multiple energy gaps equal to or greater than the energy of the germanium-rich dielectric layer 240. Thus, holes (h+) and electrons (e_) are generated in the germanium-rich dielectric layer 240. Pairing. The generated holes (h+) and electrons (e-) are directed toward and through the second conductive layer 27 and the first conductive layer 210, respectively. If a load connects the first conductive layer 21 and the second conductive layer 27A', a current will flow through the load. That is, the photon energy of the incident light 295 is converted into electrical energy by the photocell 200. Further, the first conductive layer 210 may also be made of a transparent conductive material. The steps disclosed above do not need to be performed in order, and the process is not the only way to implement the invention. For example, a photovoltaic cell can be fabricated by providing a substrate, forming a first conductive layer on the substrate, forming a germanium-rich dielectric layer on the first conductive layer, and forming a 17 201011923 second conductive layer on the germanium-rich dielectric layer. Then, the ruthenium-rich dielectric layer is subjected to laser annealing to form a plurality of ruthenium crystals. In a specific embodiment, the laser annealing is performed by directing a laser beam from the top end of the second conductive layer to the germanium rich dielectric layer. In other embodiments, the substrate and the first conductive layer are made of a transparent conductive material. The laser annealing is performed by directing a laser beam from the bottom of the substrate to the rich dielectric layer. In an alternative embodiment, the laser annealing is performed by directing two laser beams from the top and bottom of the cell to the ytterbium-rich dielectric layer, respectively. ^ Referring to Figure 4, there is shown a photovoltaic cell battery 400 in accordance with an embodiment of the present invention. Photovoltaic cell stack 400 includes a photocell 4〇1 for converting photon energy of light 495 incident on photocell 401 into electrical energy. The photocell 401 has a first conductive layer 41〇, a second conductive layer 47〇, and a germanium-rich dielectric layer 4 formed between the first conductive layer 410 and the second conductive layer 470. The 440 has a plurality of laser-induced nano crystals 445 having a multiple energy gap. Further, the photovoltaic cell stack 4a also includes a rechargeable battery pack 480 electrically coupled between the first conductive layer 41 and the second conductive layer 47 〇 φ for storing electrical energy. Further, an ammeter 485 is connected between the photo cell 401 and the rechargeable battery 480. The photo cell 4〇1 can be manufactured by the above process. Further, in the case of using a load such as a resistor instead of the rechargeable battery 480, the configuration as shown in Fig. 4 can also be used as a light sensor. Referring to Fig. 5, a curve 51 is a spectral response of a photocell having a Si nanocrystal Si?x photoelectric conversion (photosensitive) layer to white light, such as sunlight. The photon photoreaction characteristics of the photovoltaic cell (4 〇〇 _65 〇 nm) are derived from the multiple energy gaps of the Si nanocrystals of the photovoltaic cell. The digraph shows the photoluminescence response of a photocell to incident white light using different laser annealing power intensities on the Si_rich §i〇x layer. Curves 201011923 610, 620, 630, and 640 are photoluminescence reactions of laser energies of 300 mJ/cm2, 350 mJ/cm2, 400 mJ/cm2, and 440 mJ/cm2, respectively. Referring to Figure 7, there is shown the current-voltage characteristics of a photovoltaic cell in accordance with an embodiment of the present invention. Curves 710 and 720 are the dark current and photocurrent of the photovoltaic cell, respectively. This photoelectric characteristic indicates that a higher sensitivity than a conventional P-I-N (positive-inherent-negative) diode and a comparable dark current level can be easily obtained in the developed photocell. Figure 8 illustrates the spectral characteristics of a photovoltaic cell having a multiple energy gap in accordance with an embodiment of the present invention. The multiple energy gaps are divided into a plurality of narrow regions, each of which corresponds to a range of wavelengths of light to be photoelectrically converted into electrical energy. Referring to Figure 9, a cross-sectional view of a photovoltaic cell 900 in accordance with an embodiment of the present invention is shown. In a specific embodiment, a photovoltaic cell 900 has a first conductive layer 910, a first semiconductor layer 920 formed on the first conductive layer 910, and a first fused dielectric formed on the first semiconductor layer 920. a layer 930, a second germanium-rich dielectric layer 940 formed on the first germanium-rich dielectric layer 930, a second semiconductor layer 960 formed on the second germanium-rich dielectric layer 940, and a second semiconductor A second conductive layer 970 on layer 960. In one embodiment, one of the first semiconductor layer 920 and the second semiconductor layer 960 is an N-type doped semiconductor layer, and the first semiconductor layer 920 and the second semiconductor layer 960 are another P-type doped semiconductor layer. For example, the first semiconductor layer 920 is an N-type doped semiconductor layer, and the second semiconductor layer 960 is a P-type doped semiconductor layer. The N-type doped semiconductor layer includes an N-type doped germanium, and the P-type doped semiconductor layer includes a P-type doped germanium. Other semiconductor materials can also be used - to implement the invention. The N-type doped semiconductor layer 920 and the P-type doped semiconductor layer 960 can be formed by a standard process such as an implant process and a PECVD process. In other embodiments, the first semiconductor layer 920 and the second semiconductor layer 201011923

A refractive index nl, and a second rich dream dielectric 2 < nl. The first ytterbium-rich dielectric layer 93 〇 and at least one of the plurality of multiplexed first 矽-rich dielectric layers 930 have a folded layer 940 having a refractive index n2, where n 2 < 2 矽 rich dielectric layer 940 Jane crystals with at least a monthly b-span. A plurality of stone crystals can be formed by laser annealing treatment or a cVD treatment as described above. The material forming the first richer dielectric layer and the second rich dielectric layer 94G may be the same material or substantially different materials 'like rich oxides, rich nitrides, rich oxides, and the like. In a specific embodiment, the first ytterbium-rich dielectric layer 93 〇 and/or the second ytterbium-rich dielectric layer 94 〇 is a nanocrystalline granule layer (nano crystalline rich dielectric layer) having a stagnation gap. . The first conductive layer 910 and the second conductive layer 97 may be formed of gold, a metal oxide, or any combination of these materials. The material may be a refractive material comprising any combination of Ming, copper, silver, gold, titanium, molybdenum, chain, group, ruthenium, crane, alloy, other or such materials. The metal oxide may be a transparent conductive material comprising ITO, IZO, AZO, HfO or the like. The material can be a combination of a refractive material and a transparent conductive material. In practice, at least one of the first conductive layer and the second conductive layer is made of a transparent conductive material such as ITO, IZO, AZO, HfO or the like. In this embodiment, the second conductive layer 970 is preferably a layer of transparent conductive material made of a transparent conductive material. Figure 10 shows a photovoltaic cell 1 according to an embodiment of the present invention. In a specific embodiment, the photovoltaic cell 1000 includes a first conductive layer 1〇1〇, 20 201011923, a doped semiconductor layer 1020 formed on the first conductive layer 1010, and an N-type doped semiconductor layer. a photoelectric conversion layer 1〇〇1 on a 1〇2, a P-type doped semiconductor layer 1〇6〇 on the photoelectric conversion layer 1001, and a second conductive layer 丨N on the p-type doped semiconductor layer 1060 Type doped semiconductor layer 〇2〇 contains ^^ type doping dream, and the semiconductor layer view contains P type doping ^ ##

The photoelectric conversion layer 1001 includes a plurality of ruthenium crystal crystals having a multiple energy gap. In a specific embodiment, the photoelectric conversion layer 1001 includes a single layer having the multiple energy gap. The monolayer is formed of a nanocrystalline ruthenium having a plurality of ruthenium crystals having a multiple energy gap. In other embodiments, the photoelectric conversion layer 1001 includes a multilayer structure having at least one of a plurality of layers of nanocrystals having a multiple energy gap. With respect to the multilayer structure, in a specific embodiment, the photoelectric conversion layer has a first ytterbium-rich dielectric layer formed on the N-type doped semiconductor layer 1〇2〇, formed in the first ytterbium-rich dielectric layer a second richer dielectric layer ι〇4〇 and a third rich dielectric layer m formed on the second rich dielectric layer, each of the first richer dielectric layer 1030, The second rich dielectric layer 1G4G and the third Shoushixi dielectric layer 1050 each have a corresponding refractive index ni n2 #n3 : this n3 < n2 < nl. In an alternative embodiment, the first-rich dielectric layer and the first-rich dielectric layer are interchangeable. In a specific embodiment, each of the first-rich lanthanum dielectric layer 1030, the second ruthenium-rich dielectric layer, and the third ruthenium-rich medium comprise a rich material, a rich-rich sulphur-rich oxide rich dream carbide or these The combination. After forming the photovoltaic side, it is possible to apply to the photoelectric conversion layer to form a plurality of layers of laser-sensing nanocrystals having a double of 4. In the modified example, the first semiconductor layer is not shown, and the 推-type dummy semiconductor layer 21 can be formed between the 201011923 1020 and the multilayer structure, and the first + conductor layer 960 can be formed in a plurality of layers. Between the P-type doped semiconductor layer 1〇6〇.

In other embodiments, the photoelectric conversion layer 1001 has a first dream layer layer formed on the doped semiconductor layer, a nano crystal layer formed on the first layer of the stone layer 1030, and formed on the nano layer. The second layer of the layer of crystal material! One of the first layer and the second layer 1050 is formed of amorphous germanium, and the other is formed by polycrystalline. So 'photoelectric conversion layer! Gu has - multiple energy gap, a. nano crystal / poly-Si layered structure. The first conductive layer 1010 and the second conductive layer 1〇7 may be formed of a metal, a metal oxide, or any combination of these materials. The material can be a refractive material comprising aluminum, copper, silver, gold, chin, molybdenum, lithium, knobs, ruthenium, tungsten, ruthenium, others or any combination of these materials. The metal oxide may be a transparent conductive material, including IT0, IZO, AZO, Hf, and the like. The material can be a combination of a refractive material and a transparent conductive material. In practice, at least one of the first conductive layer and the second conductive layer is made of a transparent conductive material such as ITO, IZ, AZO, Hf, or the like. The photovoltaic cell of the present invention can find many application modes in a wide spectrum field, such as a photo sensor, a display panel including a touch panel, and a non-volatile memory device. Please refer to FIG. 11A, according to the present invention. One embodiment of the invention shows a display panel 11〇1 integrated with one or more photovoltaic cells (photoreceptors) 1140. The display panel 1101 includes a display area 1110 for displaying related information, and one or more photocells U 4 that are placed in the area around the display area 1110 and exposed to light. The one or more photovoltaic cells 1140 each have a germanium-rich dielectric layer having a nanocrystal having a plurality of energy gaps, and the cell is adapted to convert light energy into electrical energy. The light energy can be received from the backlight and/or ambient light. 22 201011923 The display panel 1101 may also include a display area 1120 for detecting information and receiving input by the user, a photo sensor i 13〇 for detecting light, and a surrounding photo sensor 1150 for detecting ambient light. At least they have the richness of the nanocrystals: the electric layer. : Light sensor 1130 and ambient light sensor 1150 can be placed in any corner area to detect ambient or other light. One or more photocells 114A can be positioned around the display area 1110 to convert the received light into electrical energy to conserve power consumed by the display panel 1101. The display panel 1101 can be a touch panel or a liquid crystal display panel. • The diagram illustration shows a liquid crystal display driver 1160 for driving - a liquid crystal display panel 1102 and a backlight 1170 for illuminating the liquid crystal display panel 1102. The liquid crystal display panel 1102 includes a display area 1110 for displaying related information, and one or more photocells 1140 placed in the area around the display area 1110 and exposed to the backlight 1170. The one or more photovoltaic cells 114 each comprise a multilayer structure having a germanium-rich crystalline germanium dielectric layer and the cell is adapted to convert light energy into electrical energy. This light energy can be received from the backlight and/or surrounding light. This electric energy is supplied to the liquid crystal display driver 1160 as driving power. The method disclosed in the present invention can be used to fabricate a photovoltaic layer of a light-emitting device and/or a photosensitive layer of a light sensing device using a high-efficiency laser annealing at a low temperature. The laser-induced chopped nanocrystals fabricated in accordance with embodiments of the present invention within the dielectric layer exhibit high density, fairly uniform and uniform laser-induced nanocrystals for the cloth' and consistent laser-sensing Mona Crystal diameter. These methods use low temperature excimer laser annealing. This treatment does not require high-temperature post-annealing and production of low-temperature polycrystalline dream film (Low-Temperature P〇ly-Si.Thin Film)

The traditional processing of Transistors, LTPS-TFT) is compatible. A germanium-rich dielectric layer having a laser-induced nanocrystal fabricated in accordance with many embodiments of the present invention is quite useful for a 23 201011923 solar cell, a touch panel, a peripheral light sensor, a light sensor, and Integrated with a color high quality field effect transistor (TFT) panel display. Laser-induced nanocrystals fabricated in accordance with many embodiments of the present invention can also be used as storage nodes in non-volatile memory devices with high retention, high durability, and high operating speed. Figure 12 illustrates a low temperature polycrystalline break (LTP S) panel 1200 integrated with a photovoltaic cell (or photoreceptor) in accordance with an embodiment of the present invention. The low temperature polycrystalline panel 1200 can have a plurality of pixels arranged in a matrix. In Fig. 12, only the pixels of a low temperature polysilicon panel 1200 are illustrated. In this embodiment, each pixel has a display field effect transistor 1221 and a photocell 1201 formed on the display field effect transistor 1221. Photovoltaic cell 1201 has a three-layer stacked structure comprising a first conductive layer 1230, a second conductive layer 1270, and a germanium-rich dielectric layer 1240 formed between the plurality and having a plurality of nanocrystals 1245. The field effect transistor 1220 is formed on the substrate 1210. The field effect transistor 1221 has a source region 1222 (first conductive layer 1230 electrically coupled to the photocell 12〇1), a drain region 1224, and a gate electrode 1226. The drain region 1224 (source region 1222) and the gate electrode 1226 are separated by a gate insulating layer 1220 formed on the substrate 1210. The substrate 1210 can be formed as a transparent substrate, such as a glass substrate or an elastic substrate, such as a plastic substrate. When such a photocell 12〇1 is used in a display panel 1200, the photocell 1201 is configured to face ambient light 1295. In addition, a backlight 1296 is typically used to illuminate the display panel 1200 to display information thereon. In order to prevent the backlight 1296 from deflecting the output of the photocell 1201, the first conductive layer J230 is used to effectively block the backlight 1296. In one embodiment, the rich dielectric layer 1240 of photovoltaic cell 1201 is formed from 24 201011923 cerium-rich oxide, cerium-rich nitride, cerium-rich oxynitride, cerium-rich carbide, and the like. The cerium-rich oxide layer preferably has a refractive index ranging from about 1.7 to 3.7, and the cerium-rich vapor-containing layer preferably has a refractive index ranging from about 1.7 to about 3.7. At least some of the quartz crystals preferably have a diameter ranging from about 2 to about 10 nm. Rich; the thickness of the dielectric layer 1240 is in the range of about 50-500 nm. The density of the laser-induced Monatom crystal is preferably in the range of about 1 x 1011-1 x 1012 /cm2. The second conductive layer 1270 is preferably made of a transparent conductive material such as germanium, IZO, AZO, HfO or the like. As shown in Fig. 12, the fill factor of the nanocrystal unit is much higher than that of the conventional unit because the photovoltaic cell 1201 is formed to cover a large switching area where the field effect transistor 221 is placed. Further, the metal electrode 1230 can provide effective ambient light and the backlight to separate the unit circuit from the photocell 1201, such that the electro-crystal characteristics are more stable than in a P-I-N unit. Referring to Fig. 13', there is shown a low temperature polycrystalline dream panel 1300 integrated with a photovoltaic cell (or photoreceptor) in accordance with an embodiment of the present invention. In this embodiment, each pixel has a field effect transistor 1301, a storage capacitor 13〇3, a sense φ illuminator 1305, and active regions 13〇7 formed adjacent to each other on the substrate 1310. The photoreceptor 1305 includes a first electrode 1355, a second electrode 1375, and a germanium-rich dielectric layer 1365 formed therebetween. In one embodiment, an amorphous germanium field effect transistor (a-Si TFT) panel 1300 is fabricated. This is illustrated in Figure 14. Referring to FIGS. 14A to 14F, an amorphous germanium field effect transistor panel manufacturing method 140 for displaying an integrated photovoltaic cell (photoreceptor) is illustrated according to an embodiment of the present invention. (The method comprises the following steps: first, providing a The first substrate 141 is formed. The first substrate 1410 is formed of glass or the like. Then, a plurality of gate electrodes 142 are separated from each other on the first substrate 141, and the gate electrodes 142 are electrically connected. To a gate line, wherein the step of forming a plurality of gate electrodes 142 25 25 201011923 $ is as follows: first deposit a metal layer on the substrate 1410 by sputtering; cover the metal layer at a suitable position to define the plurality of a gate electrode 142A; then exposing the remaining portion of the uncovered metal layer; etching away the uncovered portion of the metal layer; and removing the mask portion to form a plurality of gate electrodes 142. Each pair of adjacent gate electrodes 1420 defines a switching region 1412 and a solar cell region 1414. The solar cell region 1414 is adjacent to the switching region 1412, wherein a corresponding gate electrode 1420' is formed as shown in Figure 14A. The electrode 142 is formed of a metal such as aluminum (A1), molybdenum (M〇), chromium (〇), titanium (Ta), copper (Cu) or an alloy. • ^ * on the first substrate 1410 and a plurality of gates A dielectric layer (gate insulating film) 1430 is formed on the electrode 142 (). In one embodiment, the gate insulating film 143 is formed of oxidized stone, nitriding, or arsenic. An amorphous germanium layer 1442 formed on the gate insulating layer 1430 covers the gate electrode 142A of each of the switching regions 1412, and then a doped amorphous germanium layer 1444 is formed on the amorphous germanium layer 1442. Doped non- The germanium layer 1444 is formed on an n+ doped (n-type heavily doped) amorphous germanium or p+ doped (p-type heavily doped) amorphous germanium and is φ and serves as a contact layer, as shown in FIG. 14B. In one embodiment, the amorphous germanium layer 1442 and the contact layer 1444 are formed by successively depositing amorphous germanium and doped amorphous germanium by PECVD and then patterning. In addition, 'deposited tantalum oxide or nitrogen is sequentially deposited. The ruthenium gate insulating film 143 〇, the amorphous iridium layer 1442 and the doped amorphous germanium layer ι444, then the amorphous germanium layer 1442 and the doped The amorphous germanium layer 1444 is patterned to form an amorphous germanium layer 1442 and a doped amorphous germanium layer 1444, as shown in FIG. 14b. Thereafter, a metal layer 1450 is formed on the gate insulating film 143 and in the switching region. A contact layer 1444 is formed in 1412. Then, a ytterbium-rich dielectric layer 1460 is formed on each of the solar cell regions 1414 on the metal layer, as shown in Fig. 14C, 26 201011923. As shown in Fig. 14D, A mask, exposure and etch process is applied to the metal layer 1450 in sequence to further define the field effect transistor in each of the switching regions 1412, 'where the contact layer 1444 is divided into a source interface 1444 & and a drain interface, 1444b, and metal Layer 1450 is also divided into a first portion 1452 and a second portion 1454 within each zone 1412. The first portion 1452 is coupled to the source interface 1444a and a signal line, and the second portion 1454 is spaced apart from the first portion 1452 and to the drain interface 1444b as shown in Figure 14D. In addition, a third portion 1456 of the metal layer 1450 spaced apart from the first portion 1452 and the second portion 1454 is formed in each solar cell region, as discussed below, as the first electrode of the solar cell. As shown in Fig. 14E, a protective layer (film) 1470 covering all of the field effect transistors in each of the switching regions 1412 and covering the germanium-rich dielectric layer 1460 in each of the solar cell regions 1414 is then formed. Then, a protective layer 1470 is sequentially applied with a mask, an exposure, and an etching process to define a via 1472 for coupling the switching element to the pixel electrode (through the drain electrode 1454), and removing the germanium-rich dielectric layer 1460. cover. At this stage, a laser annealing treatment can be applied to the 矽 矽 dielectric layer 1460 to form a plurality of laser-induced 矽 nanocrystals having multiple energy gaps. As shown in Figure 14F, the next step is to form a transparent metal layer having a first portion 1482 on the via 1472 and a separate second portion 1484 on the germanium-rich dielectric layer 1460. The first portion 1482 is coupled to the 汲 electrode 1454 of the field effect transistor and is referred to as a pixel electrode. The second portion of the transparent metal layer • 1484, the germanium-rich dielectric layer 1460, and the third portion 1456 of the metal layer 1450 form a solar cell. The transparent metal layer is formed of a transparent, conductive material, including indium oxide (IZO), amorphous indium tin oxide (amorphous ITO), 27 201011923 poly-ITO, etc., and has a thickness of about 〇丄, i 乂0. "The range of m. In the description of the invention, the present invention - #雷,β, 矽 nanocrystals, multiple energy gaps and their applications. The photovoltaic cell and right, χ, have and use 畐 氧化物 oxide layer After the process: 奈 罾 罾 罾 罾 奈 罾 罾 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ The fixed, advantageous, flexible, reliable, and functional components have the advantages of large right and large screen charging factor, complete backlight isolation, and adjustable absorption spectrum. The foregoing description of the exemplary embodiments of the present invention is only for Description, not for

The invention is limited to the precise forms disclosed, and many modifications and variations can be made. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention has been chosen and described in terms of the preferred embodiments of the invention Those skilled in the art will appreciate that other specific embodiments are also within the scope of the invention. Therefore, the scope of the invention is defined by the scope of the claims, rather than the foregoing description and the exemplary embodiments described herein. BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings illustrate one or more embodiments of the invention Wherever, the same reference numerals will be used in the drawings to refer to the same or similar parts, in which: FIG. 1 illustrates a cross-sectional view of a photovoltaic cell in accordance with an embodiment of the present invention; DETAILED DESCRIPTION OF THE INVENTION One embodiment of the invention produces a photovoltaic cell having a germanium-rich dielectric layer having a plurality of laser-induced nanocrystals: (A) forming a rich layer on a first conductive layer矽 dielectric layer; 28 201011923 (B) laser annealing the dielectric layer to form a plurality of quartz crystals; and (c) forming a second conductive layer on the ytterbium-rich dielectric layer; The figure shows the characteristics of the laser-induced nanocrystals: (Sentence TEM image shows the size of the nanocrystals, and the distribution of nanocrystals in the laser-induced nanocrystals; The figure shows a cross-sectional view of a photovoltaic cell in accordance with an embodiment of the present invention; Figure 5 shows the photocurrent response of the photovoltaic cell to an incident white light; φ Figure 6 shows a rich 制成 made using different laser annealing power intensities a photoluminescence reaction of the photovoltaic cell to an incident white light; FIG. 7 is a graph showing current-voltage characteristics of a photovoltaic cell according to an embodiment of the present invention; and FIG. 8 is a view showing a plurality of embodiments according to the present invention having a plurality of A spectral characteristic of a photocell having a heavy energy gap, wherein the multiple energy gap is divided into a plurality of narrow regions; FIG. 9 is a cross-sectional view showing a photocell according to an embodiment of the present invention; and FIG. 10 is a view showing other specifics according to the present invention. A cross-sectional view of a photovoltaic cell of an embodiment; FIGS. 11A and 11B are diagrams showing a display panel incorporating one or more Shihs Nanocrystalline photovoltaic cells in accordance with an embodiment of the present invention; FIG. 12 is a diagram showing an embodiment in accordance with the present invention. A cross-sectional view of a low temperature polycrystalline germanium panel incorporating a plurality of Shihlin nanocrystalline photovoltaic cells; FIG. 13 is a cross-sectional view showing a low temperature polycrystalline germanium panel incorporating a plurality of hard nanocrystalline photovoltaic cells in accordance with other embodiments of the present invention; and a 14A Figures to Figure 14F are diagrammatically shown in accordance with an embodiment of the present invention 29 201011923 for manufacturing Processing of low temperature polycrystalline germanium panels of a plurality of nanocrystalline crystal cells. [Main component symbol description]

100 photocell 140 矽 rich dielectric layer 170 second conductive layer 181 contact hole 210 first conductive layer 245 矽 nano crystal 292 laser 400 photo battery battery 410 first conductive layer 445 矽 nano crystal 480 rechargeable battery 495 light 900 photocell 920 first semiconductor layer 940 second germanium-rich dielectric layer 970 second conductive layer 1001 photoelectric conversion layer 1020 N-type doped semiconductor layer 1040 second germanium-rich dielectric layer 1060 P-type doped semiconductor layer 1101 display panel 1110 Display area 110 first conductive layer 145 nano crystal 180 dielectric layer 200 photocell 240 rich dielectric layer 270 second conductive layer 295 light 401 photo cell 440 rich dielectric layer 470 second conductive layer 485 ammeter 510-720 curve 910 first conductive layer 930 first germanium-rich dielectric layer 960 second semiconductor layer 1000 photovoltaic cell 1010 first conductive layer 1030 first germanium-rich dielectric layer 1050 third germanium-rich dielectric layer 1070 second conductive layer 1102 liquid crystal display panel 1120 display area 201011923 1130 light sensor 1150 ambient light sensor 1200 low temperature polysilicon germanium panel 1210 substrate> 1222 source region 1226 gate electrode 1240 germanium rich dielectric layer 1270 second conductive layer 1296 backlight 1301 Field Effect Transistor Π05 Photoreceptor 1310 Substrate 1365 Rich Dielectric Layer 1400 Method 1412 Switching Area 1420 Gate Electrode 1442 Amorphous Layer 1444a Source Interface 1450 Metal Layer 1454 Second Part 1460 Rich 矽 Dielectric Layer 1472 Through Hole ^ 1484 second part 1140 photocell 1160 liquid crystal display driver 1201 photocell 1221 display field effect transistor 1224 drain region 1230 first conductive layer 1245 矽 nano crystal 1295 ambient light 1300 low temperature polysilicon 矽 panel 1303 storage capacitor 1307 active area 1355 first Electrode 1375 second electrode 1410 first substrate 1414 solar cell region 1430 dielectric layer 1444 doped amorphous germanium layer 1444b drain interface 1452 first portion 1456 third portion 1470 protective layer 1482 first portion 31

Claims (1)

201011923 'VII. Patent application scope: 1- A photovoltaic cell comprising: (a) a first conductive layer; (b) an N-type doped semiconductor layer formed on the first conductive layer; (c) a first germanium a layer is formed on the N-type doped semiconductor layer; () a nanocrystalline germanium (nc-Si) layer is formed on the first layer; (e) a second layer is formed on the nanocrystalline layer (0 p-type doped semiconductor layer is formed on the second chopped layer; and φ (g) a second conductive layer is formed on the p-type doped semiconductor layer. 2. As described in claim 1 a photocell, wherein one of the first layer and the second layer is made of amorphous germanium (a-Si), and the first layer and the second layer are The material is a polycrystalline hair (4). 3. The photocell according to claim 1, wherein the nightmare layer comprises a plurality of Monaime crystal males, each of the Cainan crystal pro == about 1 nm to The photovoltaic cell of claim 1, wherein at least one of the first conductive layer and the second conductive layer is at least one of the first conductive layer and the second conductive layer The material is a transparent conductive material. 5. The photovoltaic cell according to claim 4, wherein the transparent conductive material is indium tin oxide (ITO), indium zinc oxide (IZ〇), aluminum zinc oxide. (AZO), an oxide (Hf〇) or a combination of these. 32 201011923 6. The photocell according to the patent application scope, wherein the material of the ❹-type semiconductor layer is a 掺杂-type doping dream, and The material of the p-type semiconductor layer is Ρ-type doped 矽. 7. A method for manufacturing a photovoltaic cell, comprising the steps of: (a) providing a substrate L (b) forming a first conductive layer on the substrate; (c) forming an n-type doped semiconductor layer on the first conductive layer; (d) forming a first germanium layer on the N-type doped semiconductor layer; (e) forming a first germanium layer a nanocrystalline 矽 (ncSi) layer; (f) forming a second ruthenium layer on the nano crystallization layer; (g) forming a p-type doped semiconductor layer on the second ruthenium layer; and (h) Forming a second conductive layer on the P-type doped semiconductor layer. The method of claim 7, wherein the method of claim 7 The step of forming the nanocrystalline germanium layer comprises: (i) forming a germanium-rich (Si_rieh) dielectric layer on the first germanium layer; and (ii) laser annealing the germanium-rich dielectric layer to form a plurality of germanium layers Nanocrystalline crystal. 9. A photovoltaic cell comprising: (4) a first conductive layer; (b) a second conductive layer; and (c) a photoelectric conversion layer formed on the first conductive layer and the second conductive layer The photovoltaic cell of claim 9, wherein the photoelectric conversion 33 201011923 layer comprises: (a-Si-A layer); (U) - a poly-Si layer; and (ui) - a Si-rich dielectric layer is formed between the amorphous layer and the polysilicon layer. The photovoltaic cell of claim 1, wherein the material of the rich-rich dielectric layer comprises a cerium-rich oxide, a cerium-rich nitride, a cerium-rich oxynitride, and a cerium-rich carbide. Or a combination of these. 12. The photovoltaic cell of claim 1, wherein the rich dielectric layer comprises a nanocrystalline crystalline germanium (nc-Si) layer, the nanocrystalline crystalline layer having a plurality of nanocrystals, each The size of the nanocrystals is between about 1 nanometer and about 2 nanometers. The photocell of claim 9, wherein the optical layer comprises: (0) a first germanium-rich (Si_rich) dielectric layer formed on the first conductive layer and having a refractive index nl; (π) - a second germanium-rich (Si_rich) dielectric layer formed on the first germanium-rich dielectric layer and having a refractive index n2, wherein n2 < ni. 14. as described in claim 13 a photovoltaic cell, wherein the photoelectric conversion layer further comprises a third ruthenium-rich dielectric layer formed between the second ruthenium-rich dielectric layer and the second conductive layer The photocell of claim 14, wherein the material of each of the first nightmare dielectric layer, the second germanium-rich dielectric layer, and the third germanium-rich dielectric layer comprises a photocell. A cerium compound, a cerium-rich cerium oxide, a cerium-rich oxynitride, a cerium-rich carbide, or a combination thereof. The photovoltaic cell according to claim 13, wherein the photoelectric conversion layer further comprises: (1) an amorphous germanium (a-Si) layer; and a (ϋ) polycrystalline poly (poly-Si) layer, wherein The first ruthenium-rich dielectric layer and the second ruthenium-rich dielectric layer are formed between the amorphous ruthenium layer and the polysilicon layer. 17. The photovoltaic cell of claim 9, further comprising: (1) An N-type doped semiconductor layer is formed between the first conductive layer and the photoelectric conversion layer; and a (1)-P-type doped semiconductor layer is formed between the second conductive layer and the photoelectric conversion layer. The photovoltaic cell of claim 9, wherein at least one of the first and first conductive layers is made of a transparent conductive material. 19. A method of fabricating a photovoltaic cell comprising the steps of: (a) providing a substrate; (b) forming a -first conductive layer on the substrate; (4) forming a photoelectric conversion layer on the first conductive layer, wherein the photovoltaic Turn 35 201011923 The layer has a multi-band gap; and (d) forms a second conductive layer on the photoelectric conversion layer. 20. The method of claim 19, wherein the step of forming the photoelectric conversion layer comprises the steps of: (i) forming a first layer of germanium on the first layer; (Π) forming a germanium ( a Si-rich dielectric layer on the first germanium layer; and (Hi) a second ground layer on the rich dielectric layer, wherein the first dream layer and the second germanium layer are one of An amorphous germanium (aSi) layer is included, and the other of the first germanium layer and the second germanium layer comprises a poly-Si layer. 21. The method of claim 2, wherein the step of forming the germanium-rich dielectric layer further comprises: laser annealing the germanium-rich dielectric layer to form a plurality of germanium crystals. 22. The method of claim 19, wherein the step of forming the photoelectric conversion layer comprises: (1) forming a -first-rich WSi_Heh dielectric layer on the first conductive layer, the first Fu Shi Xi Jie The electrical layer has a refractive index ni; and (11) forms a second fused (Si_rich) dielectric layer on the first ytterbium-rich dielectric layer, the second ytterbium-rich dielectric layer having a refractive index, wherein U < nl. The method of claim 22, wherein the step of forming the phototransfer 23· as in the patent application range further comprises 36 201011923 forming a third germanium-rich dielectric layer in the second germanium-rich dielectric layer and the second conductive layer Between the layers, the third rich-rich dielectric layer has a refractive index n3, wherein n3 <n2<nl 〇24·, as described in claim 19, the method further comprises: (i) Forming an N-type doped semiconductor layer between the first conductive layer and the photoelectric conversion layer; and (?) forming a P-type doped semiconductor layer between the second conductive layer and the photoelectric conversion layer. A liquid crystal display panel is driven by a liquid crystal display driver and illuminated by a backlight, the liquid crystal display panel comprising: (a) a display area 'for displaying related information; and (b) a photocell The photocell is placed in an area surrounding the display area and exposed to a light to convert the optical energy of the light into an electrical energy. The electrical energy is supplied to the liquid crystal display driver as a driving power, wherein the first battery comprises: a first conductive layer; (ii) a second conductive layer; and (iii) a photoelectric conversion layer formed between the first conductive layer and the second conductive layer, wherein the first electrical conversion layer has a plurality Heavy energy gap. The liquid crystal display panel of claim 25, wherein the photoelectric conversion layer further comprises: (1) an amorphous germanium (a-Si) layer; 37 201011923 (1)) a polycrystalline stone (poly- a Si-rich dielectric layer is formed between the amorphous germanium layer and the polysilicon layer. The liquid crystal display panel according to claim 26 of the patent application The material of the Fu Shi Xi dielectric layer comprises a rich shi xi oxide, a rich dream nitride, a rich shi oxynitride, a ruthenium rich carbide or a combination thereof. ❿ 28 · as claimed in the scope of the 27th The liquid crystal display panel, wherein the rich dream dielectric layer comprises a nano crystal 矽 (nc_Si) layer having a plurality of nanocrystals of 'the size of each of the nanocrystals The liquid crystal display panel of claim 1, wherein the photoelectric conversion layer comprises: (I) a first Si-rich dielectric a layer formed on the first conductive layer φ and having a refractive index nl; and (II) a second rich a (Si_rich) dielectric layer formed on the first ytterbium-rich dielectric layer and having a refractive index n2, wherein n2 <nl. 30. The liquid crystal display panel of claim 29, wherein the light = The conversion layer further includes a third germanium-rich dielectric layer formed between the second germanium-rich layer and the second conductive layer, the third germanium-rich dielectric layer having a refractive index n3' wherein η3<η2< The liquid crystal display panel of claim 25, wherein the display region has a plurality of low temperature polycrystalline silicon thin film transistors (LTPS-TFT, "low temperature polycrystalline silicon thin film transistor". A method for manufacturing a liquid crystal display (LCD) panel, the liquid crystal display panel is driven by a liquid crystal display driver and illuminated by a backlight, the method comprising: (a) providing a substrate; (b) forming a a display area on the substrate; and • 0) forming a photocell on the substrate surrounding an area of the display area and exposing it to light, when the photocell is capable of light energy Switching to an electrical energy, the electrical energy being supplied to the liquid crystal display driver as a driving power, wherein the step of forming the photovoltaic cell comprises the steps of: (i) forming a first conductive layer; (Π) forming a second conductive layer; and (iii Forming a photoelectric conversion layer between the first conductive layer and the second conductive φ layer, wherein the photoelectric conversion layer has a multiple energy gap. 33. The method of claim 32, wherein the step of forming the photoelectric conversion layer comprises: (1) forming a first germanium layer on the first conductive layer; (ii) forming a germanium rich (Si-rich) a dielectric layer on the first layer; and (iii) forming a second layer on the rich laser-annealed layer; 'where the first layer and the second layer One of the layers comprises an amorphous a-Si layer, and the other of the first and second layers comprises a poly-Si layer. 39. The method of claim 33, wherein the step of forming the rich dielectric layer further comprises: laser annealing the Fupu electrical layer to form a plurality of nanocrystals. L5 is the branch of the 32nd item of the patent scope, wherein the step of forming the photoelectric conversion layer comprises: () forming a first silicon-rich (Si-rich) dielectric layer on the first conductive layer, the first a first germanium-rich dielectric layer having a refractive index n1; and (11) forming a second germanium-rich (Si_rich) dielectric layer on the first germanium-rich dielectric layer, the first germanium-rich dielectric layer having a refraction The method of claim 35, wherein the step of forming the photoelectric conversion layer further comprises: forming a third germanium-rich dielectric layer in the second rich layer The third germanium-rich dielectric layer between the electrical layer and the second conductive layer has a refractive index η3, where η3 < η2 < nl. 37. A display panel comprising: a plurality of pixels arranged in a matrix form, each pixel comprising: (a) an active area for displaying related information; (b) a switching area having at least one switching element; and (c) A photocell is formed between the active region and the switching region, wherein the photovoltaic cell has a photoelectric conversion layer, and the photoelectric conversion layer includes a multiple energy gap. The display panel of claim 37, wherein the photoelectric conversion layer comprises: (1) an amorphous germanium (a-Si) layer; (H) a polycrystalline silicon (poly-Si) layer; and ((1) A Si-rich dielectric layer is formed between the amorphous germanium layer and the polysilicon layer. 39. The display panel of claim 38, wherein the ytterbium-rich dielectric layer comprises a nano-crystal 矽 (nc_Si) layer, the nano-crystal 矽 layer having a plurality of 矽 nanocrystals, each The nanocrystal size ranges from about 1 nanometer to about 20 nanometers. 40. A method of fabricating a display panel, comprising: (a) providing a substrate; and (b) forming a plurality of pixels in a matrix on the substrate, wherein each pixel comprises a photovoltaic cell, wherein the photovoltaic cell has a photoelectric conversion The layer, the photoelectric conversion layer comprises a multiple energy gap. 41. The method of claim 4, wherein the forming the pixels comprises: (〇 forming a plurality of gates electrically coupled to the plurality of gate lines on the substrate, wherein the gates are in space Separating from each other, and each pair of adjacent ones of the gates defines an active area, a switching area, and a first battery forming the gate in the switching area, the photovoltaic cell being located between the active area and the switching area 201011923 (ϋ) forming a gate insulating layer on the gates and the remaining regions of the substrate; (in) forming an amorphous germanium (a_si) layer over the gate insulating layer covering the respective regions of the switching region a gate electrode; (iv) forming a doped amorphous germanium layer on the amorphous germanium layer; (v) forming a first conductive layer on the doped amorphous germanium layer and remaining regions of the gate insulating layer; VI) forming a Si-rich dielectric layer covering each photocell region on the first conductive layer; (vii) forming a source and a drain in each switching region, thereby Forming a field effect transistor array on the substrate; (viii) Forming a passive layer over the first conductive layer over the field effect transistor array and the germanium rich dielectric layer; (ix) forming a via contact on the passive layer in the switching region and the photocell region; and (X) Forming a second conductive layer having a first portion on a region between the switching region and the photovoltaic cell region, such that the first portion contacts the drain of the field effect transistor through the via hole in each switching region And contacting the second portion of the photopolymer cell region. The method of claim 41, wherein the step of forming the plurality of pixels further comprises laser annealing The electric layer forms a plurality of nano crystals therein.