FR2456144A1 - Vacuum vapour deposition of semiconductor layers on substrates - esp. continuous deposition of arsenic selenide or sulphide on wide strip for opto-electronic devices - Google Patents

Vacuum vapour deposition of semiconductor layers on substrates - esp. continuous deposition of arsenic selenide or sulphide on wide strip for opto-electronic devices

Info

Publication number
FR2456144A1
FR2456144A1 FR7912120A FR7912120A FR2456144A1 FR 2456144 A1 FR2456144 A1 FR 2456144A1 FR 7912120 A FR7912120 A FR 7912120A FR 7912120 A FR7912120 A FR 7912120A FR 2456144 A1 FR2456144 A1 FR 2456144A1
Authority
FR
France
Prior art keywords
sulphide
deposition
esp
opto
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7912120A
Other languages
French (fr)
Other versions
FR2456144B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KISHINEVSKY G UNIVE
Original Assignee
KISHINEVSKY G UNIVE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE2916080A priority Critical patent/DE2916080C2/en
Application filed by KISHINEVSKY G UNIVE filed Critical KISHINEVSKY G UNIVE
Priority to FR7912120A priority patent/FR2456144A1/en
Publication of FR2456144A1 publication Critical patent/FR2456144A1/en
Application granted granted Critical
Publication of FR2456144B1 publication Critical patent/FR2456144B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/246—Replenishment of source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/04—Pattern deposit, e.g. by using masks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

Appts. includes several evaporators, which are heated to below the b.pts. of the materials being evaporated. Working surface of each evaporator is fed with a dose of a material, and the dose is completely evaporated in a time (T). Evaporators are fed with doses of materials in the time sequence T/n, where n is the number of evaporators. Pref. appts. includes a rotary doser contg. recesses located at 360 degrees/n intervals round a rotating shaft. Homogeneous deposits, e.g. of arsenic sulphide and/or selenide, can be obtd. on wide, flexible strip or foil fed continuously through the appts.
FR7912120A 1979-04-20 1979-05-11 Vacuum vapour deposition of semiconductor layers on substrates - esp. continuous deposition of arsenic selenide or sulphide on wide strip for opto-electronic devices Granted FR2456144A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE2916080A DE2916080C2 (en) 1979-04-20 1979-04-20 Process for molecular vapor deposition of semiconductor layers and device for carrying out this process
FR7912120A FR2456144A1 (en) 1979-04-20 1979-05-11 Vacuum vapour deposition of semiconductor layers on substrates - esp. continuous deposition of arsenic selenide or sulphide on wide strip for opto-electronic devices

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2916080A DE2916080C2 (en) 1979-04-20 1979-04-20 Process for molecular vapor deposition of semiconductor layers and device for carrying out this process
FR7912120A FR2456144A1 (en) 1979-04-20 1979-05-11 Vacuum vapour deposition of semiconductor layers on substrates - esp. continuous deposition of arsenic selenide or sulphide on wide strip for opto-electronic devices

Publications (2)

Publication Number Publication Date
FR2456144A1 true FR2456144A1 (en) 1980-12-05
FR2456144B1 FR2456144B1 (en) 1983-08-05

Family

ID=42233664

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7912120A Granted FR2456144A1 (en) 1979-04-20 1979-05-11 Vacuum vapour deposition of semiconductor layers on substrates - esp. continuous deposition of arsenic selenide or sulphide on wide strip for opto-electronic devices

Country Status (2)

Country Link
DE (1) DE2916080C2 (en)
FR (1) FR2456144A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2611746A1 (en) * 1987-03-06 1988-09-09 Centre Nat Etd Spatiales DEVICE FOR VACUUM EVAPORATION OF A CONTINUOUS METAL

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2423051A (en) * 1945-09-05 1947-06-24 Ruben Samuel Selenium depositing machine
DE1032998B (en) * 1954-04-03 1958-06-26 Standard Elektrik Ag Device for the production of thin layers from several components
DE1043010B (en) * 1956-03-12 1958-11-06 Licentia Gmbh Device for vaporizing liquid substances, in particular for vaporizing selenium for the production of dry rectifiers
US3077444A (en) * 1956-06-13 1963-02-12 Siegfried R Hoh Laminated magnetic materials and methods
FR1337659A (en) * 1961-11-13 1963-09-13 Republic Steel Corp Vacuum metallization improvements
FR1507581A (en) * 1966-01-07 1967-12-29 Philips Nv Spray coating process for substrates
FR1584608A (en) * 1968-07-30 1969-12-26
FR2052433A5 (en) * 1969-06-25 1971-04-09 Pennwalt Corp
FR2079384A1 (en) * 1970-02-12 1971-11-12 Baxter Alexander Ltd

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2423051A (en) * 1945-09-05 1947-06-24 Ruben Samuel Selenium depositing machine
DE1032998B (en) * 1954-04-03 1958-06-26 Standard Elektrik Ag Device for the production of thin layers from several components
DE1043010B (en) * 1956-03-12 1958-11-06 Licentia Gmbh Device for vaporizing liquid substances, in particular for vaporizing selenium for the production of dry rectifiers
US3077444A (en) * 1956-06-13 1963-02-12 Siegfried R Hoh Laminated magnetic materials and methods
FR1337659A (en) * 1961-11-13 1963-09-13 Republic Steel Corp Vacuum metallization improvements
FR1507581A (en) * 1966-01-07 1967-12-29 Philips Nv Spray coating process for substrates
FR1584608A (en) * 1968-07-30 1969-12-26
FR2052433A5 (en) * 1969-06-25 1971-04-09 Pennwalt Corp
FR2079384A1 (en) * 1970-02-12 1971-11-12 Baxter Alexander Ltd

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2611746A1 (en) * 1987-03-06 1988-09-09 Centre Nat Etd Spatiales DEVICE FOR VACUUM EVAPORATION OF A CONTINUOUS METAL
EP0283374A1 (en) * 1987-03-06 1988-09-21 Centre National D'etudes Spatiales Apparatus for the continuous vacuum evaporation of a metal
US4880960A (en) * 1987-03-06 1989-11-14 Centre National D'etudes Spatiales Continuous vacuum evaporation device for metal

Also Published As

Publication number Publication date
DE2916080C2 (en) 1984-12-06
FR2456144B1 (en) 1983-08-05
DE2916080A1 (en) 1980-10-23

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Legal Events

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