FR2449972A1 - Tube protecteur resistant a chaud pour le traitement thermique de composants a semi-conducteurs - Google Patents
Tube protecteur resistant a chaud pour le traitement thermique de composants a semi-conducteursInfo
- Publication number
- FR2449972A1 FR2449972A1 FR8003189A FR8003189A FR2449972A1 FR 2449972 A1 FR2449972 A1 FR 2449972A1 FR 8003189 A FR8003189 A FR 8003189A FR 8003189 A FR8003189 A FR 8003189A FR 2449972 A1 FR2449972 A1 FR 2449972A1
- Authority
- FR
- France
- Prior art keywords
- hot
- semiconductor components
- resistant protective
- protective tube
- tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/10—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/7722—Line condition change responsive valves
- Y10T137/7837—Direct response valves [i.e., check valve type]
- Y10T137/7898—Pivoted valves
- Y10T137/7902—Valve mounted on end of pipe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/7722—Line condition change responsive valves
- Y10T137/7837—Direct response valves [i.e., check valve type]
- Y10T137/7904—Reciprocating valves
- Y10T137/7922—Spring biased
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
TUBE PROTECTEUR RESISTANT A CHAUD, ET NOTAMMENT TUBE EN VERRE QUARTZEUX POUR LE TRAITEMENT THERMIQUE DE COMPOSANTS A SEMI-CONDUCTEURS, DONT L'EXTREMITE D'ALIMENTATION EN GAZ DE TRAITEMENT EST RETRECIE ET DONT L'EXTREMITE OPPOSEE EST OBTUREE A L'EXCEPTION D'UNE SORTIE DE GAZ. POUR EVITER UNE DIFFUSION EN RETOUR DE L'AIR AMBIANT, L'EXTREMITE 4 NON RETRECIE DU TUBE EST OBTUREE PAR UN CLAPET 5, FIXE SUR UN ETRIER DE MAINTIEN 6, QUI EST SUSPENDU ET MOBILE SUR LE TUBE 1.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2907371A DE2907371C2 (de) | 1979-02-24 | 1979-02-24 | Hochtemperaturfestes Schutzrohr für Wärmebehandlung von Halbleiterbauelementen |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2449972A1 true FR2449972A1 (fr) | 1980-09-19 |
FR2449972B1 FR2449972B1 (fr) | 1983-01-07 |
Family
ID=6063899
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8003189A Granted FR2449972A1 (fr) | 1979-02-24 | 1980-02-13 | Tube protecteur resistant a chaud pour le traitement thermique de composants a semi-conducteurs |
Country Status (5)
Country | Link |
---|---|
US (1) | US4367768A (fr) |
JP (1) | JPS55117245A (fr) |
DE (1) | DE2907371C2 (fr) |
FR (1) | FR2449972A1 (fr) |
GB (1) | GB2043837B (fr) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5862334A (ja) * | 1981-10-09 | 1983-04-13 | Mazda Motor Corp | エンジンのアイドル回転制御装置 |
DE3840588C1 (en) * | 1988-12-02 | 1990-02-22 | Westdeutsche Quarzschmelze Gmbh & Co. Kg, 2054 Geesthacht, De | Quartz glass container for the thermal treatment of semiconductor wafers |
US5492552A (en) * | 1994-03-03 | 1996-02-20 | Minnesota Mining And Manufacturing Company | Holder for annealing fiber optic coils |
US6000438A (en) * | 1998-02-13 | 1999-12-14 | Mcdermott Technology, Inc. | Phase change insulation for subsea flowlines |
US8540818B2 (en) * | 2009-04-28 | 2013-09-24 | Mitsubishi Materials Corporation | Polycrystalline silicon reactor |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR809569A (fr) * | 1935-08-09 | 1937-03-06 | Int Hydrogenation Patents Co | Soupape pour haute pression |
DE1558003A1 (de) * | 1967-05-31 | 1970-02-12 | Telefunken Patent | Diffusionsofen |
DE2533433A1 (de) * | 1974-07-26 | 1976-02-12 | Monsanto Co | Einrichtung und verfahren zur dotierung von halbleitermaterialien durch diffusion |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US418867A (en) * | 1890-01-07 | Discharge-door for steam digesters and retorts | ||
US554344A (en) * | 1896-02-11 | Clean-out valve | ||
US1246892A (en) * | 1917-03-08 | 1917-11-20 | Donnelly Mfg Company | Relief-valve. |
US2612406A (en) * | 1948-08-12 | 1952-09-30 | Kask Technical Corp | Atomizing nozzle |
US3274917A (en) * | 1964-02-17 | 1966-09-27 | Gleason Corp | Protective cover for exhaust pipes |
US3823685A (en) * | 1971-08-05 | 1974-07-16 | Ncr Co | Processing apparatus |
US3900597A (en) * | 1973-12-19 | 1975-08-19 | Motorola Inc | System and process for deposition of polycrystalline silicon with silane in vacuum |
US4173944A (en) * | 1977-05-20 | 1979-11-13 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Silverplated vapor deposition chamber |
JPS543646U (fr) * | 1977-06-11 | 1979-01-11 |
-
1979
- 1979-02-24 DE DE2907371A patent/DE2907371C2/de not_active Expired
- 1979-12-20 GB GB7943967A patent/GB2043837B/en not_active Expired
-
1980
- 1980-02-13 FR FR8003189A patent/FR2449972A1/fr active Granted
- 1980-02-19 US US06/122,089 patent/US4367768A/en not_active Expired - Lifetime
- 1980-02-22 JP JP2069480A patent/JPS55117245A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR809569A (fr) * | 1935-08-09 | 1937-03-06 | Int Hydrogenation Patents Co | Soupape pour haute pression |
DE1558003A1 (de) * | 1967-05-31 | 1970-02-12 | Telefunken Patent | Diffusionsofen |
DE2533433A1 (de) * | 1974-07-26 | 1976-02-12 | Monsanto Co | Einrichtung und verfahren zur dotierung von halbleitermaterialien durch diffusion |
Also Published As
Publication number | Publication date |
---|---|
US4367768A (en) | 1983-01-11 |
JPS55117245A (en) | 1980-09-09 |
GB2043837B (en) | 1983-03-23 |
FR2449972B1 (fr) | 1983-01-07 |
DE2907371B1 (de) | 1980-07-10 |
DE2907371C2 (de) | 1981-03-12 |
GB2043837A (en) | 1980-10-08 |
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