FR2445618A1 - SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREOF - Google Patents

SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREOF

Info

Publication number
FR2445618A1
FR2445618A1 FR7930817A FR7930817A FR2445618A1 FR 2445618 A1 FR2445618 A1 FR 2445618A1 FR 7930817 A FR7930817 A FR 7930817A FR 7930817 A FR7930817 A FR 7930817A FR 2445618 A1 FR2445618 A1 FR 2445618A1
Authority
FR
France
Prior art keywords
region
source
insulating layer
gate
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7930817A
Other languages
French (fr)
Other versions
FR2445618B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of FR2445618A1 publication Critical patent/FR2445618A1/en
Application granted granted Critical
Publication of FR2445618B1 publication Critical patent/FR2445618B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

Ce composant à semi-conducteur, caractérisé en ce qu'il comporte un substrat semi-conducteur 10 avec une région de source 36, une région de grille 47 contiguë de la région de source et une région de dérivation 56 contiguë de la région de grille, ainsi qu'une région de drain 38 connectée électriquement à la région de source par la région de grille et la région de dérivation, ledit composant comportant également une première couche isolante 46 disposée au-dessus de la région de grille, une seconde couche isolante 12 plus émaisse disposée au-dessus de toute la région de dérivation, et des électrodes de source S et de drain D en contact avec les régions de source 36 et de drain 38, ainsi qu'une électrode de grille G disposée au-dessus de la première couche isolante 46 et d'au moins une partie de la seconde couche isolante 12 plus épaisse. Application à la fabrication des transistors MOS.This semiconductor component, characterized in that it comprises a semiconductor substrate 10 with a source region 36, a gate region 47 contiguous with the source region and a branch region 56 contiguous with the gate region , as well as a drain region 38 electrically connected to the source region by the gate region and the bypass region, said component also comprising a first insulating layer 46 disposed above the gate region, a second insulating layer 12 plus disposed above the entire lead region, and source S and drain D electrodes in contact with source 36 and drain 38 regions, as well as a gate electrode G disposed above the first insulating layer 46 and at least part of the thicker second insulating layer 12. Application to the manufacture of MOS transistors.

FR7930817A 1978-12-15 1979-12-17 SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREOF Granted FR2445618A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US96990678A 1978-12-15 1978-12-15

Publications (2)

Publication Number Publication Date
FR2445618A1 true FR2445618A1 (en) 1980-07-25
FR2445618B1 FR2445618B1 (en) 1985-03-01

Family

ID=25516148

Family Applications (2)

Application Number Title Priority Date Filing Date
FR7930817A Granted FR2445618A1 (en) 1978-12-15 1979-12-17 SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREOF
FR8008887A Granted FR2453501A1 (en) 1978-12-15 1980-04-21 PROCESS FOR PRODUCING A FIELD EFFECT COMPONENT

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR8008887A Granted FR2453501A1 (en) 1978-12-15 1980-04-21 PROCESS FOR PRODUCING A FIELD EFFECT COMPONENT

Country Status (6)

Country Link
JP (1) JPS5583270A (en)
CA (1) CA1138571A (en)
DE (1) DE2950413A1 (en)
FR (2) FR2445618A1 (en)
GB (1) GB2038088B (en)
IT (1) IT1120149B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4442589A (en) * 1981-03-05 1984-04-17 International Business Machines Corporation Method for manufacturing field effect transistors

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3040775A1 (en) * 1980-10-29 1982-05-13 Siemens AG, 1000 Berlin und 8000 München MIS-CONTROLLED SEMICONDUCTOR COMPONENT
DE3322669C2 (en) * 1982-07-08 1986-04-24 General Electric Co., Schenectady, N.Y. A method of manufacturing a semiconductor device having insulated gate electrodes
JPH0427799Y2 (en) * 1986-08-28 1992-07-03
US5151374A (en) * 1991-07-24 1992-09-29 Industrial Technology Research Institute Method of forming a thin film field effect transistor having a drain channel junction that is spaced from the gate electrode
US5604139A (en) * 1994-02-10 1997-02-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
JP2007085210A (en) * 2005-09-21 2007-04-05 Hitachi Ltd Water turbine or pump turbine

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3936857A (en) * 1973-07-02 1976-02-03 Nippon Electric Company Limited Insulated gate field effect transistor having high transconductance
US4001048A (en) * 1974-06-26 1977-01-04 Signetics Corporation Method of making metal oxide semiconductor structures using ion implantation
US4062699A (en) * 1976-02-20 1977-12-13 Western Digital Corporation Method for fabricating diffusion self-aligned short channel MOS device
FR2379168A1 (en) * 1977-01-31 1978-08-25 Siemens Ag FIELD EFFECT TRANSISTOR WITH SHORT CHANNEL LENGTH
US4109371A (en) * 1976-01-06 1978-08-29 Mitsubishi Denki Kabushiki Kaisha Process for preparing insulated gate semiconductor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4058822A (en) * 1975-05-30 1977-11-15 Sharp Kabushiki Kaisha High voltage, low on-resistance diffusion-self-alignment metal oxide semiconductor device and manufacture thereof
JPS605075B2 (en) * 1976-12-29 1985-02-08 松下電器産業株式会社 MOS type semiconductor device and its manufacturing method
JPS53135581A (en) * 1977-05-02 1978-11-27 Hitachi Ltd Manufacture for mos semiconductor device
US4173818A (en) * 1978-05-30 1979-11-13 International Business Machines Corporation Method for fabricating transistor structures having very short effective channels

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3936857A (en) * 1973-07-02 1976-02-03 Nippon Electric Company Limited Insulated gate field effect transistor having high transconductance
US4001048A (en) * 1974-06-26 1977-01-04 Signetics Corporation Method of making metal oxide semiconductor structures using ion implantation
US4109371A (en) * 1976-01-06 1978-08-29 Mitsubishi Denki Kabushiki Kaisha Process for preparing insulated gate semiconductor
US4062699A (en) * 1976-02-20 1977-12-13 Western Digital Corporation Method for fabricating diffusion self-aligned short channel MOS device
FR2379168A1 (en) * 1977-01-31 1978-08-25 Siemens Ag FIELD EFFECT TRANSISTOR WITH SHORT CHANNEL LENGTH

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/78 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4442589A (en) * 1981-03-05 1984-04-17 International Business Machines Corporation Method for manufacturing field effect transistors

Also Published As

Publication number Publication date
DE2950413A1 (en) 1980-06-26
JPS5583270A (en) 1980-06-23
GB2038088B (en) 1983-05-25
JPS6326553B2 (en) 1988-05-30
IT1120149B (en) 1986-03-19
CA1138571A (en) 1982-12-28
GB2038088A (en) 1980-07-16
IT7951008A0 (en) 1979-12-06
FR2453501A1 (en) 1980-10-31
FR2445618B1 (en) 1985-03-01
DE2950413C2 (en) 1989-12-28
FR2453501B1 (en) 1984-09-07

Similar Documents

Publication Publication Date Title
KR920003549A (en) MIS semiconductor device
KR920700479A (en) Nonvolatile Process Compatible with Dual-Level Metal MOS Processes in Digital and Analog
JPS5998557A (en) Mos transistor
FR2445618A1 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREOF
JPS56162875A (en) Semiconductor device
GB1447675A (en) Semiconductor devices
JPS6414969A (en) Light-shielding type uprom
FR2433240A1 (en) MOS FIELD EFFECT TRANSISTOR FOR ENOUGH HIGH VOLTAGES
US4656055A (en) Double level metal edge seal for a semiconductor device
GB1378147A (en) Insulated gate field effect transistor-arrangement
JPS56110264A (en) High withstand voltage mos transistor
JPS57204171A (en) Semiconductor device
JPS52100979A (en) Production and drive of dual gate schottky barrier gate type fieled ef fect transistor
JPS5698874A (en) Preparation of semiconductor device
JPS62156876A (en) Semiconductor device
US3969150A (en) Method of MOS transistor manufacture
JPS6442863A (en) High-withstand voltage mos semiconductor device
JPS6437058A (en) Insulated-gate field-effect transistor
ES8201768A1 (en) Multiple-drain MOS transistor logic gates.
JPS56133871A (en) Mos field effect semiconductor device with high breakdown voltage
JPS6457672A (en) High breakdown voltage mos semiconductor device
JPS5756950A (en) Manufacture of insulated gate tupe semiconductor integrated ciucuit device
JPS57132368A (en) Semiconductor device
RU94037403A (en) Field-effect mis transistor
KR890004980B1 (en) High voltage semiconductor device

Legal Events

Date Code Title Description
ST Notification of lapse