IT7951008A0 - IMPROVEMENT IN THE STRUCTURES OF SEMICONDUCTOR ELECTRONIC DEVICES AND MANUFACTURING PROCEDURE - Google Patents

IMPROVEMENT IN THE STRUCTURES OF SEMICONDUCTOR ELECTRONIC DEVICES AND MANUFACTURING PROCEDURE

Info

Publication number
IT7951008A0
IT7951008A0 IT7951008A IT5100879A IT7951008A0 IT 7951008 A0 IT7951008 A0 IT 7951008A0 IT 7951008 A IT7951008 A IT 7951008A IT 5100879 A IT5100879 A IT 5100879A IT 7951008 A0 IT7951008 A0 IT 7951008A0
Authority
IT
Italy
Prior art keywords
improvement
structures
electronic devices
manufacturing procedure
semiconductor electronic
Prior art date
Application number
IT7951008A
Other languages
Italian (it)
Other versions
IT1120149B (en
Inventor
Martin Feist Wolfgang
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of IT7951008A0 publication Critical patent/IT7951008A0/en
Application granted granted Critical
Publication of IT1120149B publication Critical patent/IT1120149B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
IT51008/79A 1978-12-15 1979-12-06 IMPROVEMENT IN ELECTRONIC SEMICONDUCTOR DEVICES AND MANUFACTURING PROCEDURE IT1120149B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US96990678A 1978-12-15 1978-12-15

Publications (2)

Publication Number Publication Date
IT7951008A0 true IT7951008A0 (en) 1979-12-06
IT1120149B IT1120149B (en) 1986-03-19

Family

ID=25516148

Family Applications (1)

Application Number Title Priority Date Filing Date
IT51008/79A IT1120149B (en) 1978-12-15 1979-12-06 IMPROVEMENT IN ELECTRONIC SEMICONDUCTOR DEVICES AND MANUFACTURING PROCEDURE

Country Status (6)

Country Link
JP (1) JPS5583270A (en)
CA (1) CA1138571A (en)
DE (1) DE2950413A1 (en)
FR (2) FR2445618A1 (en)
GB (1) GB2038088B (en)
IT (1) IT1120149B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3040775A1 (en) * 1980-10-29 1982-05-13 Siemens AG, 1000 Berlin und 8000 München MIS-CONTROLLED SEMICONDUCTOR COMPONENT
US4442589A (en) * 1981-03-05 1984-04-17 International Business Machines Corporation Method for manufacturing field effect transistors
DE3322669C2 (en) * 1982-07-08 1986-04-24 General Electric Co., Schenectady, N.Y. A method of manufacturing a semiconductor device having insulated gate electrodes
JPH0427799Y2 (en) * 1986-08-28 1992-07-03
US5151374A (en) * 1991-07-24 1992-09-29 Industrial Technology Research Institute Method of forming a thin film field effect transistor having a drain channel junction that is spaced from the gate electrode
US5604139A (en) * 1994-02-10 1997-02-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
JP2007085210A (en) * 2005-09-21 2007-04-05 Hitachi Ltd Water turbine or pump turbine

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5636585B2 (en) * 1973-07-02 1981-08-25
US4001048A (en) * 1974-06-26 1977-01-04 Signetics Corporation Method of making metal oxide semiconductor structures using ion implantation
US4058822A (en) * 1975-05-30 1977-11-15 Sharp Kabushiki Kaisha High voltage, low on-resistance diffusion-self-alignment metal oxide semiconductor device and manufacture thereof
JPS5284981A (en) * 1976-01-06 1977-07-14 Mitsubishi Electric Corp Production of insulated gate type semiconductor device
US4062699A (en) * 1976-02-20 1977-12-13 Western Digital Corporation Method for fabricating diffusion self-aligned short channel MOS device
JPS605075B2 (en) * 1976-12-29 1985-02-08 松下電器産業株式会社 MOS type semiconductor device and its manufacturing method
DE2703877C2 (en) * 1977-01-31 1982-06-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen Short channel MIS transistor and process for its manufacture
JPS53135581A (en) * 1977-05-02 1978-11-27 Hitachi Ltd Manufacture for mos semiconductor device
US4173818A (en) * 1978-05-30 1979-11-13 International Business Machines Corporation Method for fabricating transistor structures having very short effective channels

Also Published As

Publication number Publication date
DE2950413A1 (en) 1980-06-26
JPS5583270A (en) 1980-06-23
GB2038088B (en) 1983-05-25
JPS6326553B2 (en) 1988-05-30
IT1120149B (en) 1986-03-19
CA1138571A (en) 1982-12-28
GB2038088A (en) 1980-07-16
FR2445618A1 (en) 1980-07-25
FR2453501A1 (en) 1980-10-31
FR2445618B1 (en) 1985-03-01
DE2950413C2 (en) 1989-12-28
FR2453501B1 (en) 1984-09-07

Similar Documents

Publication Publication Date Title
IT1121996B (en) ADHESIVE STRAP AND ITS MANUFACTURING PROCEDURE
IT1127770B (en) SEMICONDUCTOR INTEGRATED CIRCUIT AND PROCEDURE FOR ITS MANUFACTURE
GB2014790A (en) Semiconductor substrate and method of manufacture thereof
IT1114012B (en) SEMICONDUCTOR DEVICES AND INTEGRATED CIRCUITS
IT7947824A0 (en) IMPROVEMENT IN TRANSMISSION BELTS AND MANUFACTURING PROCEDURE
IL56870A0 (en) Semiconductor film and its production
DE2963058D1 (en) Large scale integrated circuit and method of fabricating the same
GB2030002B (en) Semiconductor devices and methods of manufacturing them
DE2965786D1 (en) Semiconductor device and a method of producing the same
MY8500674A (en) Method of manufacturing semiconductor devices
IT1098127B (en) METHOD OF MANUFACTURE OF A SEMI-CONDUCTOR AND SEMI-CONDUCTOR DEVICE MANUFACTURED WITH THE AID OF THIS METHOD
JPS558097A (en) Method of manufacturing semiconductor ic
DE2960132D1 (en) Three-layer semiconductor diode and its application
IT1135354B (en) ENCAPSLUED ELECTRONIC DEVICES AND ENCAPSULATING COMPOSITIONS
IT1110092B (en) MOLD AND PROCEDURE FOR TRANSFER ENCAPSULATION OF ELECTRONIC SEMICONDUCTOR DEVICES
IT7919362A0 (en) INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF.
IT7951008A0 (en) IMPROVEMENT IN THE STRUCTURES OF SEMICONDUCTOR ELECTRONIC DEVICES AND MANUFACTURING PROCEDURE
HK36385A (en) Improvements in the manufacture of a semiconductor device
IT7824657A0 (en) METHOD OF MANUFACTURE OF A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURED WITH THE AID OF SUCH METHOD.
KR840005918A (en) Substrate structure of semiconductor device and manufacturing method thereof
IT1128530B (en) IMPROVEMENT IN SEMICONDUCTOR STRUCTURES FOR EXAMPLE FOR TRANSISTORS AND PROCEDURE FOR THEIR MANUFACTURE
DE2961052D1 (en) Method of making a semiconductor device comprising components of the field effect type
BE873652A (en) SEMICONDUCTOR INTEGRATED CIRCUIT
JPS5586111A (en) Chip type electronic part and method of fabricating same
PL204820A1 (en) SEMICONDUCTOR ELEMENT AND METHOD OF MANUFACTURING THE SOCCONDUCTOR ELEMENT

Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19921204