FR2433590A1 - Procede d'attaque chimique en phase gazeuse - Google Patents

Procede d'attaque chimique en phase gazeuse

Info

Publication number
FR2433590A1
FR2433590A1 FR7919344A FR7919344A FR2433590A1 FR 2433590 A1 FR2433590 A1 FR 2433590A1 FR 7919344 A FR7919344 A FR 7919344A FR 7919344 A FR7919344 A FR 7919344A FR 2433590 A1 FR2433590 A1 FR 2433590A1
Authority
FR
France
Prior art keywords
aluminum
chemical attack
gas phase
phase chemical
attack
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7919344A
Other languages
English (en)
Other versions
FR2433590B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eaton Corp
Original Assignee
Eaton Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eaton Corp filed Critical Eaton Corp
Publication of FR2433590A1 publication Critical patent/FR2433590A1/fr
Application granted granted Critical
Publication of FR2433590B1 publication Critical patent/FR2433590B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

L'invention concerne l'attaque chimique de l'aluminium. Elle se rapporte à un procedé d'attaque d'aluminium dans un appareil dans lequel un premier plasma de tétrachlorure de carbone retire les couches superficielles d'oxyde d'aluminium dans les zones choisies, et un second plasma de tétrachlorure de carbone et de chlore assure l'attaque de l'aluminium. La sélectivité de l'attaque est très importante grâce à la section convenable des pressions partielles des deux matières utilisées. Application à la fabrication des circuits intégrés.
FR7919344A 1978-07-27 1979-07-26 Procede d'attaque chimique en phase gazeuse Granted FR2433590A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/928,597 US4182646A (en) 1978-07-27 1978-07-27 Process of etching with plasma etch gas

Publications (2)

Publication Number Publication Date
FR2433590A1 true FR2433590A1 (fr) 1980-03-14
FR2433590B1 FR2433590B1 (fr) 1983-02-25

Family

ID=25456502

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7919344A Granted FR2433590A1 (fr) 1978-07-27 1979-07-26 Procede d'attaque chimique en phase gazeuse

Country Status (5)

Country Link
US (1) US4182646A (fr)
JP (1) JPS5937572B2 (fr)
DE (1) DE2930360A1 (fr)
FR (1) FR2433590A1 (fr)
GB (1) GB2026397B (fr)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3030814C2 (de) * 1979-08-17 1983-06-16 Tokuda Seisakusyo, Ltd., Zama, Kanagawa Verfahren zum Plasmaätzen eines Werkstücks
US4325984B2 (en) * 1980-07-28 1998-03-03 Fairchild Camera & Inst Plasma passivation technique for the prevention of post-etch corrosion of plasma-etched aluminum films
DE3140675A1 (de) * 1980-10-14 1982-06-16 Branson International Plasma Corp., 94544 Hayward, Calif. Verfahren und gasgemisch zum aetzen von aluminium
US4380488A (en) * 1980-10-14 1983-04-19 Branson International Plasma Corporation Process and gas mixture for etching aluminum
US4373990A (en) * 1981-01-08 1983-02-15 Bell Telephone Laboratories, Incorporated Dry etching aluminum
US4353777A (en) * 1981-04-20 1982-10-12 Lfe Corporation Selective plasma polysilicon etching
JPS5836156U (ja) * 1981-09-03 1983-03-09 沖電気工業株式会社 高印字品位プリンタ
US4457820A (en) * 1981-12-24 1984-07-03 International Business Machines Corporation Two step plasma etching
JPS58143530A (ja) * 1982-02-22 1983-08-26 Toshiba Corp 化合物半導体装置の製造方法
US4711767A (en) * 1985-02-05 1987-12-08 Psi Star Plasma reactor with voltage transformer
US4600563A (en) * 1985-02-05 1986-07-15 Psi Star Incorporated Plasma reactor with voltage transformer
NL8500771A (nl) * 1985-03-18 1986-10-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij een op een laag siliciumoxide aanwezige dubbellaag - bestaande uit poly-si en een silicide - in een plasma wordt geetst.
US5171525A (en) * 1987-02-25 1992-12-15 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US4917586A (en) * 1987-02-25 1990-04-17 Adir Jacob Process for dry sterilization of medical devices and materials
US4976920A (en) * 1987-07-14 1990-12-11 Adir Jacob Process for dry sterilization of medical devices and materials
US5087418A (en) * 1987-02-25 1992-02-11 Adir Jacob Process for dry sterilization of medical devices and materials
US5200158A (en) * 1987-02-25 1993-04-06 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US4818488A (en) * 1987-02-25 1989-04-04 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US4801427A (en) * 1987-02-25 1989-01-31 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US4931261A (en) * 1987-02-25 1990-06-05 Adir Jacob Apparatus for dry sterilization of medical devices and materials
US4943417A (en) * 1987-02-25 1990-07-24 Adir Jacob Apparatus for dry sterilization of medical devices and materials
US4838992A (en) * 1987-05-27 1989-06-13 Northern Telecom Limited Method of etching aluminum alloys in semi-conductor wafers
US4808259A (en) * 1988-01-25 1989-02-28 Intel Corporation Plasma etching process for MOS circuit pregate etching utiliizing a multi-step power reduction recipe
US4915779A (en) * 1988-08-23 1990-04-10 Motorola Inc. Residue-free plasma etch of high temperature AlCu
DE3940820C2 (de) * 1989-12-11 1998-07-09 Leybold Ag Verfahren zur Behandlung von Werkstücken durch reaktives Ionenätzen
US5106471A (en) * 1990-04-02 1992-04-21 Motorola, Inc. Reactive ion etch process for surface acoustic wave (SAW) device fabrication
US7459100B2 (en) 2004-12-22 2008-12-02 Lam Research Corporation Methods and apparatus for sequentially alternating among plasma processes in order to optimize a substrate
US20080047579A1 (en) * 2006-08-25 2008-02-28 Bing Ji Detecting the endpoint of a cleaning process

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3994793A (en) * 1975-05-22 1976-11-30 International Business Machines Corporation Reactive ion etching of aluminum
FR2342783A1 (fr) * 1976-03-03 1977-09-30 Int Plasma Corp Procede et appareil de reaction chimique dans une decharge luminescente

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3757733A (en) * 1971-10-27 1973-09-11 Texas Instruments Inc Radial flow reactor
JPS5287985A (en) * 1976-01-19 1977-07-22 Mitsubishi Electric Corp Plasma etching method
US4030967A (en) * 1976-08-16 1977-06-21 Northern Telecom Limited Gaseous plasma etching of aluminum and aluminum oxide

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3994793A (en) * 1975-05-22 1976-11-30 International Business Machines Corporation Reactive ion etching of aluminum
FR2342783A1 (fr) * 1976-03-03 1977-09-30 Int Plasma Corp Procede et appareil de reaction chimique dans une decharge luminescente

Also Published As

Publication number Publication date
US4182646A (en) 1980-01-08
JPS5937572B2 (ja) 1984-09-11
FR2433590B1 (fr) 1983-02-25
JPS5518399A (en) 1980-02-08
DE2930360A1 (de) 1980-02-07
GB2026397B (en) 1982-07-07
GB2026397A (en) 1980-02-06

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Legal Events

Date Code Title Description
ST Notification of lapse