FR2433589A1 - Appareil d'attaque chimique par un plasma - Google Patents

Appareil d'attaque chimique par un plasma

Info

Publication number
FR2433589A1
FR2433589A1 FR7919343A FR7919343A FR2433589A1 FR 2433589 A1 FR2433589 A1 FR 2433589A1 FR 7919343 A FR7919343 A FR 7919343A FR 7919343 A FR7919343 A FR 7919343A FR 2433589 A1 FR2433589 A1 FR 2433589A1
Authority
FR
France
Prior art keywords
plasma chemical
chemical attack
attack apparatus
relates
varies
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7919343A
Other languages
English (en)
Other versions
FR2433589B1 (fr
Inventor
John Zajac
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eaton Corp
Original Assignee
Eaton Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eaton Corp filed Critical Eaton Corp
Publication of FR2433589A1 publication Critical patent/FR2433589A1/fr
Application granted granted Critical
Publication of FR2433589B1 publication Critical patent/FR2433589B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape

Abstract

L'invention concerne les appareils d'attaque chimique par un plasma. Elle se rapporte à un appareil dans lequel l'électrode supérieure 3 a une épaisseur qui varie de maniere que l'espacement entre les électrodes 3 et 5 diminue du centre vers les bords. Cette caractéristique permet une attaque uniforme des plaquettes des différentes rangées disposées sur l'électrode inférieure. Application à la fabrication des circuits intégrés.
FR7919343A 1978-07-27 1979-07-26 Appareil d'attaque chimique par un plasma Granted FR2433589A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/928,594 US4230515A (en) 1978-07-27 1978-07-27 Plasma etching apparatus

Publications (2)

Publication Number Publication Date
FR2433589A1 true FR2433589A1 (fr) 1980-03-14
FR2433589B1 FR2433589B1 (fr) 1983-02-25

Family

ID=25456494

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7919343A Granted FR2433589A1 (fr) 1978-07-27 1979-07-26 Appareil d'attaque chimique par un plasma

Country Status (5)

Country Link
US (1) US4230515A (fr)
JP (1) JPS5518400A (fr)
DE (1) DE2930391A1 (fr)
FR (1) FR2433589A1 (fr)
GB (1) GB2026369B (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0027578A1 (fr) * 1979-10-17 1981-04-29 Texas Instruments Incorporated Appareil muni d'une électrode pour le décapage par plasma excité par radio-fréquence et procédé de décapage utilisant un tel appareil
DE3606959A1 (de) * 1986-03-04 1987-09-10 Leybold Heraeus Gmbh & Co Kg Vorrichtung zur plasmabehandlung von substraten in einer durch hochfrequenz angeregten plasmaentladung

Families Citing this family (53)

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JPS5610932A (en) * 1979-07-09 1981-02-03 Mitsubishi Electric Corp Plasma treating apparatus
JPS5623745A (en) * 1979-08-01 1981-03-06 Hitachi Ltd Plasma etching device
US4268374A (en) * 1979-08-09 1981-05-19 Bell Telephone Laboratories, Incorporated High capacity sputter-etching apparatus
JPS56100419A (en) * 1980-01-11 1981-08-12 Nec Corp Dry etching device of facing plate electrode type
GB2070340B (en) * 1980-02-07 1983-10-12 Shinetsu Chemical Co Method for surface properties of a disclike shaped article of a vinyl chloridebased resin
US4342901A (en) * 1980-08-11 1982-08-03 Eaton Corporation Plasma etching electrode
US4340461A (en) * 1980-09-10 1982-07-20 International Business Machines Corp. Modified RIE chamber for uniform silicon etching
US4701592A (en) * 1980-11-17 1987-10-20 Rockwell International Corporation Laser assisted deposition and annealing
US4340462A (en) * 1981-02-13 1982-07-20 Lam Research Corporation Adjustable electrode plasma processing chamber
US4367114A (en) * 1981-05-06 1983-01-04 The Perkin-Elmer Corporation High speed plasma etching system
US4426274A (en) 1981-06-02 1984-01-17 International Business Machines Corporation Reactive ion etching apparatus with interlaced perforated anode
JPS5832559U (ja) * 1981-08-28 1983-03-03 株式会社東芝 棒金放出機
JPS5871376A (ja) * 1981-10-21 1983-04-28 Hitachi Ltd スパツタエツチング装置
DE3272669D1 (en) * 1982-03-18 1986-09-25 Ibm Deutschland Plasma-reactor and its use in etching and coating substrates
US4384938A (en) * 1982-05-03 1983-05-24 International Business Machines Corporation Reactive ion etching chamber
US4478703A (en) * 1983-03-31 1984-10-23 Kawasaki Jukogyo Kabushiki Kaisha Sputtering system
FR2550044B1 (fr) * 1983-07-05 1986-11-21 Parrens Pierre Appareil de traitement par plasma de substrats en forme de plaquettes
JPS6021382A (ja) * 1983-07-15 1985-02-02 Canon Inc プラズマｃｖｄ装置
US4512841A (en) * 1984-04-02 1985-04-23 International Business Machines Corporation RF Coupling techniques
CA1281439C (fr) * 1985-02-05 1991-03-12 James F. Battey Reacteur a plasma et methode d'elimination de resines photosensibles
US4711767A (en) * 1985-02-05 1987-12-08 Psi Star Plasma reactor with voltage transformer
US4600563A (en) * 1985-02-05 1986-07-15 Psi Star Incorporated Plasma reactor with voltage transformer
US4673456A (en) * 1985-09-17 1987-06-16 Machine Technology, Inc. Microwave apparatus for generating plasma afterglows
US4849068A (en) * 1985-10-24 1989-07-18 Texas Instruments Incorporated Apparatus and method for plasma-assisted etching
US4728863A (en) * 1985-12-04 1988-03-01 Wertheimer Michael R Apparatus and method for plasma treatment of substrates
US4810322A (en) * 1986-11-03 1989-03-07 International Business Machines Corporation Anode plate for a parallel-plate reactive ion etching reactor
JPH0276223A (ja) * 1988-08-05 1990-03-15 Siemens Ag 金属接触の製造方法と装置
US5458724A (en) * 1989-03-08 1995-10-17 Fsi International, Inc. Etch chamber with gas dispersing membrane
US4900395A (en) * 1989-04-07 1990-02-13 Fsi International, Inc. HF gas etching of wafers in an acid processor
US5169408A (en) * 1990-01-26 1992-12-08 Fsi International, Inc. Apparatus for wafer processing with in situ rinse
DE4025396A1 (de) * 1990-08-10 1992-02-13 Leybold Ag Einrichtung fuer die herstellung eines plasmas
US5292394A (en) * 1991-11-13 1994-03-08 Leybold Aktiengesellschaft Apparatus for large-area ionic etching
GB2261396B (en) * 1991-11-13 1995-02-08 Leybold Ag A device for large-area ion etching
CH686254A5 (de) * 1992-07-27 1996-02-15 Balzers Hochvakuum Verfahren zur Einstellung der Bearbeitungsratenverteilung sowie Aetz- oder Plasma-CVD-Anlage zu dessen Ausfuehrung.
US5597439A (en) * 1994-10-26 1997-01-28 Applied Materials, Inc. Process gas inlet and distribution passages
US6010636A (en) * 1995-12-29 2000-01-04 Lam Research Corporation Electrode with domes for plasma focusing
US6500314B1 (en) * 1996-07-03 2002-12-31 Tegal Corporation Plasma etch reactor and method
US6048435A (en) 1996-07-03 2000-04-11 Tegal Corporation Plasma etch reactor and method for emerging films
KR100252210B1 (ko) * 1996-12-24 2000-04-15 윤종용 반도체장치 제조용 건식식각장치
US6391787B1 (en) * 2000-10-13 2002-05-21 Lam Research Corporation Stepped upper electrode for plasma processing uniformity
US20060191637A1 (en) * 2001-06-21 2006-08-31 John Zajac Etching Apparatus and Process with Thickness and Uniformity Control
US20050059250A1 (en) * 2001-06-21 2005-03-17 Savas Stephen Edward Fast etching system and process for organic materials
US6838387B1 (en) 2001-06-21 2005-01-04 John Zajac Fast etching system and process
WO2003100817A1 (fr) 2002-05-23 2003-12-04 Lam Research Corporation Electrode en plusieurs parties pour reacteur de traitement au plasma de semi-conducteurs, et methode de remplacement d'une partie d'electrode en plusieurs parties
US7316761B2 (en) * 2003-02-03 2008-01-08 Applied Materials, Inc. Apparatus for uniformly etching a dielectric layer
US20050230350A1 (en) * 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US20080073557A1 (en) * 2006-07-26 2008-03-27 John German Methods and apparatuses for directing an ion beam source
EP3020850B1 (fr) 2009-07-08 2018-08-29 Aixtron SE Appareil de traitement de plasma
US8765232B2 (en) 2011-01-10 2014-07-01 Plasmasi, Inc. Apparatus and method for dielectric deposition
US8946058B2 (en) * 2011-03-14 2015-02-03 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
USRE46339E1 (en) * 2011-03-14 2017-03-14 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US9299956B2 (en) 2012-06-13 2016-03-29 Aixtron, Inc. Method for deposition of high-performance coatings and encapsulated electronic devices
US10526708B2 (en) 2012-06-19 2020-01-07 Aixtron Se Methods for forming thin protective and optical layers on substrates

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4094722A (en) * 1976-01-29 1978-06-13 Tokyo Shibaura Electric Co., Ltd. Etching apparatus using a plasma

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3757733A (en) * 1971-10-27 1973-09-11 Texas Instruments Inc Radial flow reactor
DE2241229C2 (de) * 1972-08-22 1983-01-20 Leybold-Heraeus GmbH, 5000 Köln Vorrichtung zum Ätzen von Substraten durch eine Glimmentladung
IT1203089B (it) * 1976-03-03 1989-02-15 Int Plasma Corp Procedimento ed apparecchiatura per eseguire reazioni chimiche nella regione della scarica luminescente di un plasma
US4119881A (en) * 1978-02-27 1978-10-10 Control Data Corporation Ion beam generator having concentrically arranged frustoconical accelerating grids

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4094722A (en) * 1976-01-29 1978-06-13 Tokyo Shibaura Electric Co., Ltd. Etching apparatus using a plasma

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0027578A1 (fr) * 1979-10-17 1981-04-29 Texas Instruments Incorporated Appareil muni d'une électrode pour le décapage par plasma excité par radio-fréquence et procédé de décapage utilisant un tel appareil
DE3606959A1 (de) * 1986-03-04 1987-09-10 Leybold Heraeus Gmbh & Co Kg Vorrichtung zur plasmabehandlung von substraten in einer durch hochfrequenz angeregten plasmaentladung

Also Published As

Publication number Publication date
JPS5518400A (en) 1980-02-08
DE2930391A1 (de) 1980-02-14
US4230515A (en) 1980-10-28
GB2026369A (en) 1980-02-06
FR2433589B1 (fr) 1983-02-25
GB2026369B (en) 1982-12-01

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Legal Events

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