JPS5521181A - Method of measuring positional deviation - Google Patents

Method of measuring positional deviation

Info

Publication number
JPS5521181A
JPS5521181A JP9523578A JP9523578A JPS5521181A JP S5521181 A JPS5521181 A JP S5521181A JP 9523578 A JP9523578 A JP 9523578A JP 9523578 A JP9523578 A JP 9523578A JP S5521181 A JPS5521181 A JP S5521181A
Authority
JP
Japan
Prior art keywords
electrodes
positional deviation
resistance
resisting
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9523578A
Other languages
Japanese (ja)
Inventor
Takeshi Yamano
Junichi Mihashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9523578A priority Critical patent/JPS5521181A/en
Publication of JPS5521181A publication Critical patent/JPS5521181A/en
Pending legal-status Critical Current

Links

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: To detect the positional deviation of mask setting very accurately and easily by way of the resistance value change of a resisting substance by making a resisting substance including the junction of an electrode pulling out hole and an electrode on a semiconductor wafer.
CONSTITUTION: On the semiconductor wafer a pair of resisting substances 1y, 2y along the Y direction and a pair of resisting substances 1x, 2x along the X direction are respectively arranged. Assuming that the electrodes pulling out holes 9yW 12y and Al electrodes 5yW8y are deviated in the direction on account of positional deviation of the first and second masks, the resistance between Al electrodes 5y and 6y and the resistance between Al electrodes 7y and 8y become differential through the contact resistance and the deviation of mask setting will be measured electrically magnified.
COPYRIGHT: (C)1980,JPO&Japio
JP9523578A 1978-08-03 1978-08-03 Method of measuring positional deviation Pending JPS5521181A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9523578A JPS5521181A (en) 1978-08-03 1978-08-03 Method of measuring positional deviation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9523578A JPS5521181A (en) 1978-08-03 1978-08-03 Method of measuring positional deviation

Publications (1)

Publication Number Publication Date
JPS5521181A true JPS5521181A (en) 1980-02-15

Family

ID=14132090

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9523578A Pending JPS5521181A (en) 1978-08-03 1978-08-03 Method of measuring positional deviation

Country Status (1)

Country Link
JP (1) JPS5521181A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4397078A (en) * 1980-08-11 1983-08-09 Telmec Co., Ltd. Method and apparatus for measuring a gap distance between a mask and a wafer to be used in fabrication of semiconductor integrated circuits
CN110058486A (en) * 2019-03-26 2019-07-26 云谷（固安）科技有限公司 The detection method of mask plate component and mask plate component splicing precision
CN113281968A (en) * 2021-05-17 2021-08-20 长江存储科技有限责任公司 Test method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4397078A (en) * 1980-08-11 1983-08-09 Telmec Co., Ltd. Method and apparatus for measuring a gap distance between a mask and a wafer to be used in fabrication of semiconductor integrated circuits
CN110058486A (en) * 2019-03-26 2019-07-26 云谷（固安）科技有限公司 The detection method of mask plate component and mask plate component splicing precision
CN110058486B (en) * 2019-03-26 2022-06-28 云谷（固安）科技有限公司 Mask plate assembly and detection method for splicing precision of mask plate assembly
CN113281968A (en) * 2021-05-17 2021-08-20 长江存储科技有限责任公司 Test method

Similar Documents

Publication Publication Date Title
JPS5588382A (en) Preparation of tunnel junction type josephson element
JPS5735320A (en) Structure of mask for baking of semiconductor integrated circuit
JPS5521181A (en) Method of measuring positional deviation
JPS5775438A (en) Semiconductor element
JPS5412263A (en) Semiconductor element and production of the same
JPS548465A (en) Etching method
JPS5694770A (en) Transistor
JPS52154351A (en) Formation of electrode contact holes in semiconductor devices
JPS5715454A (en) Semiconductor device
JPS5362471A (en) Semiconductor device
JPS52141257A (en) Sonde for detecting charged stacking layer thickness
JPS5227294A (en) Manufacturing method of electro-chromism
JPS5336185A (en) Electrode lead-out method of semiconductor integrated circuit
JPS56166462A (en) Manufacture of combustion detecting element
JPS5438772A (en) Semiconductor element for testing
JPS57160160A (en) Semiconductor device
JPS5287373A (en) Production of semiconductor device
JPS52135268A (en) Semiconductor device and its production
JPS5440089A (en) Manufacture of luminous element
JPS52113677A (en) Production of semiconductor device
JPS5214464A (en) Surface resistance measuring device
JPS52144288A (en) Preparation of electrode in semiconductor device
JPS5367351A (en) Measuring method of resistivity and intrinsic contact resistance
JPS5678141A (en) Method of forming electrode for semiconductor device
JPS56130968A (en) Semiconductor device