JPS56130968A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS56130968A JPS56130968A JP3381180A JP3381180A JPS56130968A JP S56130968 A JPS56130968 A JP S56130968A JP 3381180 A JP3381180 A JP 3381180A JP 3381180 A JP3381180 A JP 3381180A JP S56130968 A JPS56130968 A JP S56130968A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- region
- resistance
- squeezing
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE:To measure accurately a squeezing resistance in a semiconductor device by forming a high impurity density region on the surface of the region between which the squeezing resistor is interposed to form a pattern for leading an electrode and forming a plurality of squeezing resistance patterns in parallel with each other. CONSTITUTION:The other conductivity type resistance region 33 is formed on one conductivity type substrate 31, and one conductivity type surface region 35 is formed on the surface thereof. A pattern C for retaining the potential of the substrate 31 at a predetermined potential and two test patterns A, B having different shapes of the resistance region under the surface region 35 are formed. The pattern A is a pattern for measuring the squeezing resistance with a ratio of the width to the length as 1:1, and the pattern B is a pattern of measuring the squeezing resistance with a ration of the width to the length as 2:1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3381180A JPS56130968A (en) | 1980-03-17 | 1980-03-17 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3381180A JPS56130968A (en) | 1980-03-17 | 1980-03-17 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56130968A true JPS56130968A (en) | 1981-10-14 |
Family
ID=12396855
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3381180A Pending JPS56130968A (en) | 1980-03-17 | 1980-03-17 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56130968A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101000600B1 (en) * | 2003-04-30 | 2010-12-10 | 크로스텍 캐피탈, 엘엘씨 | Test pattern for monitoring sheet resistivity of implantation process and cmos image sensor with built in the same |
-
1980
- 1980-03-17 JP JP3381180A patent/JPS56130968A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101000600B1 (en) * | 2003-04-30 | 2010-12-10 | 크로스텍 캐피탈, 엘엘씨 | Test pattern for monitoring sheet resistivity of implantation process and cmos image sensor with built in the same |
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