JPS5455462A - Masking accuracy measurement - Google Patents

Masking accuracy measurement

Info

Publication number
JPS5455462A
JPS5455462A JP12276477A JP12276477A JPS5455462A JP S5455462 A JPS5455462 A JP S5455462A JP 12276477 A JP12276477 A JP 12276477A JP 12276477 A JP12276477 A JP 12276477A JP S5455462 A JPS5455462 A JP S5455462A
Authority
JP
Japan
Prior art keywords
resistances
difference
mask
discrepancy
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12276477A
Other languages
Japanese (ja)
Inventor
Takeshi Yamano
Junichi Mihashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12276477A priority Critical patent/JPS5455462A/en
Publication of JPS5455462A publication Critical patent/JPS5455462A/en
Pending legal-status Critical Current

Links

Landscapes

  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: To accomplish the mask registration highly accurately and efficiently at a high speed by detecting the discrepancy in the mask registration as the difference of resistances in a parallel diffusion region.
CONSTITUTION: A gate electrode 4 is formed through a separate oxidized film 2 from a portion of a semiconductor substrate region 1 to the other semiconductor substrate region 1 which is in parallel with the former. An imprurity is diffused by using the gate electrode 4 and the separate oxidized film 2 as a mask so that the resistances of the diffused regions 5 and 6 of a semiconductor device are measured by means of AI elctrodes 8 to 12. The discrepancy in the mask registration is electrically measured in accordance with the difference between the resistances between the electrodes 9 and 11 and the Al electrodes 10 and 12. Since the detection is accomplished through the difference in the resistance, the detecting accuracy is improved. Since, moreover, the detection is carried out in an electrically measuring manner, many measurements can be accomplished easily and promptly
COPYRIGHT: (C)1979,JPO&Japio
JP12276477A 1977-10-12 1977-10-12 Masking accuracy measurement Pending JPS5455462A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12276477A JPS5455462A (en) 1977-10-12 1977-10-12 Masking accuracy measurement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12276477A JPS5455462A (en) 1977-10-12 1977-10-12 Masking accuracy measurement

Publications (1)

Publication Number Publication Date
JPS5455462A true JPS5455462A (en) 1979-05-02

Family

ID=14844027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12276477A Pending JPS5455462A (en) 1977-10-12 1977-10-12 Masking accuracy measurement

Country Status (1)

Country Link
JP (1) JPS5455462A (en)

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