JPS56118658A - Gas detecting element - Google Patents

Gas detecting element

Info

Publication number
JPS56118658A
JPS56118658A JP2188280A JP2188280A JPS56118658A JP S56118658 A JPS56118658 A JP S56118658A JP 2188280 A JP2188280 A JP 2188280A JP 2188280 A JP2188280 A JP 2188280A JP S56118658 A JPS56118658 A JP S56118658A
Authority
JP
Japan
Prior art keywords
electrode layer
hole
layer
gas
detecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2188280A
Other languages
Japanese (ja)
Inventor
Tokuo Takeuchi
Toshio Takahane
Toshisuke Hishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2188280A priority Critical patent/JPS56118658A/en
Publication of JPS56118658A publication Critical patent/JPS56118658A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

PURPOSE:To improve sensitivity and make it possible to measure plural constituents of gas with one sensing element, by providing the first electrode layer on an insulating substrate, and also by forming a gas-sensing material layer, having holes which are coaxial and symmetrical and become larger in turn, and the electrode layer alternately in turn. CONSTITUTION:A gas-sensing material layer (semiconductor layer) 5, which is composed of a metallic oxide such as SnO2, etc. whose resistance value is varied by absorption of gas, is formed with hole 9 on the first electrode layer 4 formed on an insulating substrate 3. And then, the second electrode layer 6, having a hole 10 which is symmetrical with but larger in size than the hole 9, is formed. On this second electrode layer 6, a semiconductor layer 7 is formed with a hole which is coaxial with but larger in size than the hole 10, and then, the third electrode layer 8 is further formed on the layer 6 in the same manner. Widths P of exposed section (s) of the layers 5 and 7 are equalized in this manner so as to prevent only narrow- width section from becoming the detecting surface. If materials for detecting different kinds of gases are used for the semiconductor layers 5 and 7, the semiconductor layers become able to be utilized for detecting two kinds of gases. If materials of the same kind are used, it is possible to improve the detecting sensitivity.
JP2188280A 1980-02-23 1980-02-23 Gas detecting element Pending JPS56118658A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2188280A JPS56118658A (en) 1980-02-23 1980-02-23 Gas detecting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2188280A JPS56118658A (en) 1980-02-23 1980-02-23 Gas detecting element

Publications (1)

Publication Number Publication Date
JPS56118658A true JPS56118658A (en) 1981-09-17

Family

ID=12067483

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2188280A Pending JPS56118658A (en) 1980-02-23 1980-02-23 Gas detecting element

Country Status (1)

Country Link
JP (1) JPS56118658A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008126897A1 (en) * 2007-04-10 2008-10-23 Hokuriku Electric Industry Co., Ltd. Sensing sensor and manufacturing method of the same
JP2012013579A (en) * 2010-07-01 2012-01-19 Seiko Epson Corp Semiconductor device, and method for manufacturing sensor element and semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008126897A1 (en) * 2007-04-10 2008-10-23 Hokuriku Electric Industry Co., Ltd. Sensing sensor and manufacturing method of the same
JP2012013579A (en) * 2010-07-01 2012-01-19 Seiko Epson Corp Semiconductor device, and method for manufacturing sensor element and semiconductor device

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