JPS5798824A - Infrared ray detector - Google Patents

Infrared ray detector

Info

Publication number
JPS5798824A
JPS5798824A JP17558680A JP17558680A JPS5798824A JP S5798824 A JPS5798824 A JP S5798824A JP 17558680 A JP17558680 A JP 17558680A JP 17558680 A JP17558680 A JP 17558680A JP S5798824 A JPS5798824 A JP S5798824A
Authority
JP
Japan
Prior art keywords
light receiving
parts
evaporated
etching
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17558680A
Other languages
Japanese (ja)
Inventor
Mitsuteru Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP17558680A priority Critical patent/JPS5798824A/en
Publication of JPS5798824A publication Critical patent/JPS5798824A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09Devices sensitive to infrared, visible or ultraviolet radiation

Abstract

PURPOSE:To increase sensitivity and to enable the high speed operation to be performed by connecting bidge structured light receiving parts having many fine areas in series, providing an infrared ray sensing material on each bridge to form the light receiving part. CONSTITUTION:A pattern comprising regions to become the light receiving parts and regions to become electrodes is formed by etching of an SiO2 film 10 by using photolithography. Then, etching of a silicon ship 1 is performed with the SiO2 film 10 as a mask. Thus SiO2 films 10a and 10b having gaps 2a and 2b under the films and the bridge structured body lines having supporting parts 3a and 3b are formed. Then, the infrared sensitive material, e.g., telluride 11, 11a, and 11b is evaporated. Thereafter electrode parts 20a and 20b are evaporated and formed. Furthermore, lead wires 21a and 21b are drawn, and the infrared detector is formed. If the electric resistance of gold black 19 is sufficiently larger than the resistance of bolometer, insulating layer 18 is not necessarily required.
JP17558680A 1980-12-12 1980-12-12 Infrared ray detector Pending JPS5798824A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17558680A JPS5798824A (en) 1980-12-12 1980-12-12 Infrared ray detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17558680A JPS5798824A (en) 1980-12-12 1980-12-12 Infrared ray detector

Publications (1)

Publication Number Publication Date
JPS5798824A true JPS5798824A (en) 1982-06-19

Family

ID=15998665

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17558680A Pending JPS5798824A (en) 1980-12-12 1980-12-12 Infrared ray detector

Country Status (1)

Country Link
JP (1) JPS5798824A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01138429A (en) * 1987-07-24 1989-05-31 New Japan Radio Co Ltd Thermopile
US5404125A (en) * 1991-07-19 1995-04-04 Terumo Kabushiki Kaisha Infrared radiation sensor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5348791A (en) * 1976-10-15 1978-05-02 Hitachi Ltd Production of infrared ray detector

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5348791A (en) * 1976-10-15 1978-05-02 Hitachi Ltd Production of infrared ray detector

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01138429A (en) * 1987-07-24 1989-05-31 New Japan Radio Co Ltd Thermopile
US5404125A (en) * 1991-07-19 1995-04-04 Terumo Kabushiki Kaisha Infrared radiation sensor

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