FR2427758A1 - Boitier pour composants electriques et electroniques - Google Patents
Boitier pour composants electriques et electroniquesInfo
- Publication number
- FR2427758A1 FR2427758A1 FR7914294A FR7914294A FR2427758A1 FR 2427758 A1 FR2427758 A1 FR 2427758A1 FR 7914294 A FR7914294 A FR 7914294A FR 7914294 A FR7914294 A FR 7914294A FR 2427758 A1 FR2427758 A1 FR 2427758A1
- Authority
- FR
- France
- Prior art keywords
- electrical
- box
- housing
- conductors
- weldability
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004020 conductor Substances 0.000 abstract 3
- 238000005260 corrosion Methods 0.000 abstract 2
- 230000007797 corrosion Effects 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 150000002431 hydrogen Chemical class 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 150000004756 silanes Chemical class 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4817—Conductive parts for containers, e.g. caps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/041—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction having no base used as a mounting for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/045—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads having an insulating passage through the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31551—Of polyamidoester [polyurethane, polyisocyanate, polycarbamate, etc.]
- Y10T428/31609—Particulate metal or metal compound-containing
- Y10T428/31612—As silicone, silane or siloxane
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Casings For Electric Apparatus (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
Boîtier pour l'encapsulage des composants électroniques ou électriques, constitué d'une plaque de base 1 traversée par des conducteurs 2 et d'un capot 4, ce boîtier ayant été revêtu d'une couche améliorant la soudabilité des conducteurs et sa résistance à la corrosion. Les surfaces influençant les propriétés électriques à l'intérieur du boîtier sont revêtues de silanes, et/ou le boîtier est composé de matériaux inhibant la diffusion de l'hydrogène, et/ou la couche améliorant la soudabilité des conducteurs électriques et la résistance à la corrosion du boîtier est déposée par un procédé s'effectuant sans dégagement d'hydrogène. Les composants électroniques ou électriques contenus dans un tel boîtier sont notamment des transistors, des diodes, des thyristors, des circuits intégrés, des quartz oscillateurs ou des relais.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2824426A DE2824426C2 (de) | 1978-06-03 | 1978-06-03 | Gehäuse zur Kapselung von elektrischen und/oder elektronischen Bauelementen |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2427758A1 true FR2427758A1 (fr) | 1979-12-28 |
FR2427758B3 FR2427758B3 (fr) | 1982-05-14 |
Family
ID=6040951
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7914294A Granted FR2427758A1 (fr) | 1978-06-03 | 1979-06-05 | Boitier pour composants electriques et electroniques |
Country Status (6)
Country | Link |
---|---|
US (1) | US4338486A (fr) |
DE (1) | DE2824426C2 (fr) |
FR (1) | FR2427758A1 (fr) |
GB (1) | GB2023941B (fr) |
IT (1) | IT1165671B (fr) |
NL (1) | NL7902744A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2450503A1 (fr) * | 1979-03-02 | 1980-09-26 | Texas Instruments Inc | Capsule pour semi-conducteur |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2919404C2 (de) * | 1979-05-14 | 1986-04-03 | Siemens AG, 1000 Berlin und 8000 München | Gehäuse für Halbleiterbauelement |
FR2568443B1 (fr) * | 1984-07-27 | 1986-11-14 | Cepe | Boitier a fermeture a froid supportant les hautes temperatures |
DE3936613A1 (de) * | 1989-11-03 | 1991-05-08 | Technotron Gmbh & Co Kg | Mehrfach verschliessbarers hybridschaltkreisgehaeuse |
US6749105B2 (en) * | 2002-03-21 | 2004-06-15 | Motorola, Inc. | Method and apparatus for securing a metallic substrate to a metallic housing |
DE10237904B4 (de) * | 2002-06-14 | 2007-05-31 | Ifm Electronic Gmbh | Elektronischer Sensor und Baueinheit aus einem elektronischen Sensor und einem Befestigungselement |
WO2007089828A2 (fr) * | 2006-01-31 | 2007-08-09 | Solidica, Inc. | capteurs intelligents cachés mis en réseau et autres circuits totalement encapsulés |
US20130167482A1 (en) * | 2011-09-08 | 2013-07-04 | Advanced Numicro Systems, Inc. | Vacuum sealing process of a mems package |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2814572A (en) * | 1955-08-17 | 1957-11-26 | Dow Corning | Organosilicon compounds and a method for waterproofing glass and product produced thereby |
USB326592I5 (fr) * | 1961-03-27 | |||
US3586926A (en) * | 1967-11-30 | 1971-06-22 | Nippon Electric Co | Hermetically sealed semiconductor device with absorptive agent |
US3675310A (en) * | 1971-04-20 | 1972-07-11 | Us Interior | Soldering method |
US4177322A (en) * | 1978-04-28 | 1979-12-04 | Dow Corning Corporation | Method of improving high voltage insulating devices |
-
1978
- 1978-06-03 DE DE2824426A patent/DE2824426C2/de not_active Expired
-
1979
- 1979-04-06 NL NL7902744A patent/NL7902744A/xx not_active Application Discontinuation
- 1979-05-04 IT IT67928/79A patent/IT1165671B/it active
- 1979-05-29 GB GB7918524A patent/GB2023941B/en not_active Expired
- 1979-06-01 US US06/044,760 patent/US4338486A/en not_active Expired - Lifetime
- 1979-06-05 FR FR7914294A patent/FR2427758A1/fr active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2450503A1 (fr) * | 1979-03-02 | 1980-09-26 | Texas Instruments Inc | Capsule pour semi-conducteur |
Also Published As
Publication number | Publication date |
---|---|
US4338486A (en) | 1982-07-06 |
NL7902744A (nl) | 1979-12-05 |
FR2427758B3 (fr) | 1982-05-14 |
GB2023941A (en) | 1980-01-03 |
IT1165671B (it) | 1987-04-22 |
DE2824426A1 (de) | 1979-12-06 |
DE2824426C2 (de) | 1982-09-02 |
GB2023941B (en) | 1982-06-30 |
IT7967928A0 (it) | 1979-05-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US2817048A (en) | Transistor arrangement | |
FR2427758A1 (fr) | Boitier pour composants electriques et electroniques | |
US5818071A (en) | Silicon carbide metal diffusion barrier layer | |
FR2394173A1 (fr) | Procede de fabrication de dispositifs electroniques qui comportent une couche mince de silicium amorphe et dispositif electronique obtenu par un tel procede | |
ES465472A1 (es) | Procedimiento para la deposicion no electrolitica de metalessobre la superficie de aluminio o aleacion de aluminio. | |
KR850001511A (ko) | 광 파이버 피복 방법 | |
KR970700375A (ko) | 적층 저유전상수 기술(layered low dielectric constant technology) | |
FR2435883A1 (fr) | Circuit integre hybride et son procede de fabrication | |
FR2403646A1 (fr) | Procede de realisation d'un depot de compose semi-conducteur d'elements iii et v | |
US3304362A (en) | Glass-to-metal seals in electronic devices | |
KR910008872A (ko) | 반도체 소자와 그 제조방법 | |
Wong | Application of polymer in encapsulation of electronic parts | |
FR2426976A1 (fr) | Procede de realisation d'un contact ohmique sur des semiconducteurs du groupe iii-v | |
JPS6417473A (en) | Manufacture of semiconductor device | |
ES8704038A1 (es) | Dispositivo de circuito integrado. | |
FR2357070A1 (fr) | Procede permettant de passiver et de rendre planaire une configuration metallique | |
Nakahara et al. | Interfacial void structure of Au/Sn/Al metalizations on GA Al As light-emitting diodes | |
FR2382078A1 (fr) | Isolateur | |
EP0183948A3 (fr) | Procédé pour la préparation photochimique de polymères aromatiques par dépôt de vapeur | |
US3537881A (en) | Low temperature method for improving the bonding of vapor plated metals | |
FR2420848A1 (fr) | Procede de realisation de diodes electroluminescentes et photodetectrices | |
FR2379910A1 (fr) | Dispositif semi-conducteur et procede pour son enrobage | |
JPH0754834B2 (ja) | ダイヤモンド膜製半導体基板の製造方法 | |
Vijh | Perspectives in electrochemical physics | |
JPS648633A (en) | Semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name |