KR850001511A - 광 파이버 피복 방법 - Google Patents

광 파이버 피복 방법 Download PDF

Info

Publication number
KR850001511A
KR850001511A KR1019840004592A KR840004592A KR850001511A KR 850001511 A KR850001511 A KR 850001511A KR 1019840004592 A KR1019840004592 A KR 1019840004592A KR 840004592 A KR840004592 A KR 840004592A KR 850001511 A KR850001511 A KR 850001511A
Authority
KR
South Korea
Prior art keywords
coating
optical fiber
pulsed plasma
silicon
plastic
Prior art date
Application number
KR1019840004592A
Other languages
English (en)
Inventor
메티온 젝슨 토마스 (외 2)
Original Assignee
더블유. 제이. 바움
인터내쇼날 스탠다드 일렉트릭 코오포레이숀
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 더블유. 제이. 바움, 인터내쇼날 스탠다드 일렉트릭 코오포레이숀 filed Critical 더블유. 제이. 바움
Publication of KR850001511A publication Critical patent/KR850001511A/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C25/00—Surface treatment of fibres or filaments made from glass, minerals or slags
    • C03C25/10—Coating
    • C03C25/24—Coatings containing organic materials
    • C03C25/40—Organo-silicon compounds
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/44—Mechanical structures for providing tensile strength and external protection for fibres, e.g. optical transmission cables
    • G02B6/4401—Optical cables
    • G02B6/4415—Cables for special applications
    • G02B6/4427—Pressure resistant cables, e.g. undersea cables
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C25/00—Surface treatment of fibres or filaments made from glass, minerals or slags
    • C03C25/10—Coating
    • C03C25/104—Coating to obtain optical fibres
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/44—Mechanical structures for providing tensile strength and external protection for fibres, e.g. optical transmission cables
    • G02B6/4401—Optical cables
    • G02B6/4402—Optical cables with one single optical waveguide
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/44—Mechanical structures for providing tensile strength and external protection for fibres, e.g. optical transmission cables
    • G02B6/4401—Optical cables
    • G02B6/4429—Means specially adapted for strengthening or protecting the cables
    • G02B6/443—Protective covering

Abstract

내용 없음

Description

광 파이버 피복 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
도면은 광 파이버의 피복 장치를 개략적으로 나타낸다.

Claims (20)

  1. 광파이버에 저투수성 피복을 씌우는 방법에 있어, 플라스틱 피복의 표면을 수정하기 위해 펄스화된 플라즈마를 사용하는 단계를 포함하고, 광 파이버에는 펄스화 플라즈마를 사용하여 플라스틱 코팅위에 저투수율의 무기질층이 침전되어 있는 것을 특징으로 하는 광 파이버 피복방법.
  2. 제1항에 있어서, 플라스틱 피복의 표면을 수정하기 위해 아르곤과 수소의 혼합물을 포함하거나 그것으로 구성된 대기속에서 펄스화 플라즈마를 사용하는 단계를 포함하는 것을 특징으로 하는 광 파이버 피복 방법.
  3. 제1항 또는 제2항에 있어서, 플라스틱 피복재료와 화학적으로 결합시키기 위해 펄스화된 플라즈마를 사용하여 라플스틱 피복의 표면내부로 침전물질을 이식하는 단계를 포함하는 것을 특징으로 하는 광 파이버 피복방법.
  4. 제3항에 있어서, 상기 이식 물질은 실리콘인 것을 특징으로 하는 광 파이버 피복방법.
  5. 제1항에 있어서, 상기 피복의 재료와 화학적으로 재반응하기 위해 플라스틱 피복의 표면내부로 액체가 흡수되도록 펄스화된 플라즈마를 사용하는 단계를 포함하는 것을 특징으로 하는 광 파이버 피복방법.
  6. 제5항에 있어서, 상기 화학적 재반응은 실리콘이 플라스틱 피복재료와 화학적으로 결합하게 되는 것을 말하는 광 파이버 피복방법.
  7. 제4항 또는 제6항에 있어서, 상기 플라스틱 피복을 연마, 크로스팅크, 플라스틱 피복 재료에 실리콘을 이식시킴으로써 플라스틱 피복을 수정하는 단계는 그 수정된 표면을 실리콘을 포함하는 무기질층으로 피복하도록 펄스화 플라즈마를 사용하는 단계로 이어지는 것을 특징으로 하는 광 파이버 피복방법.
  8. 제7항에 있어서, 상기 침전된 층의 조성물은 실리콘과 탄소의 비화학 양론적으로 조성한 것을 특징으로 하는 광 파이버 피복방법.
  9. 제7항에 있어서, 상기 침전층의 조성은 실리콘과 질소의 비화학 양론적 조성인 것을 특징으로 하는 광 파이버 피복방법.
  10. 제1항에 있어서, 펄스화 플라즈마는 플라스틱 피복의 표면을 수정하기 위해 사용되어 크로스 팅크를 증가시키며, 또한 펄스화 플라즈마는 상기 크로스링크된 재료를 매칭시키는 물질을 침전시키는데 사용되며, 피복의 용적과 침전물질 사이에 등급이 매겨져 있고 펄스화 플라즈마내에서 상기 피복이 노출되었을 때 대기는 유기질에서 무기질로 침전물을 변화시키는 것을 특징으로 하는 광 파이버 피복방법.
  11. 제10항에 있어서, 상기 무기질은 실리콘 화합물인 것을 특징으로 하는 광 파이버 피복 방법.
  12. 제10항에 있어서, 상기 무기질은 티타니움의 화합물인 것을 특징으로 하는 광 파이버 피복 방법.
  13. 제11항 또는 12항에 있어서, 상기 무기질은 질화물인 것을 특징으로 하는 광 파이버 피복 방법.
  14. 제11항 또는 12항에 있어서, 상기 무기질은 탄화물인 것을 특징으로 하는 광 파이버 피복 방법.
  15. 제10항에 있어서, 상기 무기질은 알루미나인 것을 특징으로 하는 광 파이버 피복 방법.
  16. 제10항~15항에 있어서, 상기 대기는 무기질에서 유기질로 다시 침전되도록 더욱 변화되고, 상기 유기질층은 특수성 물질로된 것을 특징으로 하는 광 파이버 피복 방법.
  17. 제16항에 있어서, 상기 투수성 물질은 불화탄소중합체인 것을 특징으로 하는 광 파이버 피복 방법.
  18. 전기 각항에 있어서, 상기 피복은 종속 배치실 또는 재반응실내의 펄스화 플라즈마에 노출되는 것을 특징으로 하는 광 파이버 피복 방법.
  19. 광 파이버 유리위에서 저투수성 피복을 제공하는 방법에 있어서, 펄스화 플라즈마를 사용하여 플라스틱 피복의 표면을 처리하는 단계를 포함하고, 상기 광 파이버는 첨부도면을 참조하여 전술한 처리 방법으로 피복되는 것을 특징으로 하는 광 파이버 피복방법.
  20. 전기 각 항에서 청구한 방법에 의해 저 투수성의 피복이 설치된 광 파이버.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019840004592A 1983-08-02 1984-08-01 광 파이버 피복 방법 KR850001511A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB08320773A GB2144343A (en) 1983-08-02 1983-08-02 Optical fibre manufacture
GB8320773 1983-08-02

Publications (1)

Publication Number Publication Date
KR850001511A true KR850001511A (ko) 1985-03-30

Family

ID=10546649

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840004592A KR850001511A (ko) 1983-08-02 1984-08-01 광 파이버 피복 방법

Country Status (7)

Country Link
US (1) US4568563A (ko)
EP (1) EP0135993A1 (ko)
JP (1) JPS6036356A (ko)
KR (1) KR850001511A (ko)
AU (1) AU3129784A (ko)
ES (1) ES8603087A1 (ko)
GB (1) GB2144343A (ko)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4750806A (en) * 1985-06-17 1988-06-14 Alcatel Usa Corporation Glass fibers and capillaries with high temperature resistant coatings
GB2150858B (en) * 1983-12-06 1986-11-26 Standard Telephones Cables Ltd Optical fibres
GB2155024A (en) * 1984-03-03 1985-09-18 Standard Telephones Cables Ltd Surface treatment of plastics materials
CA1278193C (en) * 1985-07-05 1990-12-27 Brian G. Bagley Method for preparation of silicate glasses of controlled index ofrefraction and optical device including same
JP2588388B2 (ja) * 1986-08-08 1997-03-05 株式会社 半導体エネルギー研究所 被膜作製方法
US4743662A (en) * 1986-11-03 1988-05-10 Dow Corning Corporation Infusible preceramic polymers via plasma treatment
US4764394A (en) * 1987-01-20 1988-08-16 Wisconsin Alumni Research Foundation Method and apparatus for plasma source ion implantation
US4985112A (en) * 1987-02-09 1991-01-15 International Business Machines Corporation Enhanced plasma etching
US5110409A (en) * 1987-02-09 1992-05-05 Ibm Enhanced plasma etching
US4842941A (en) * 1987-04-06 1989-06-27 General Electric Company Method for forming abrasion-resistant polycarbonate articles, and articles of manufacture produced thereby
US5051308A (en) * 1987-08-24 1991-09-24 General Electric Company Abrasion-resistant plastic articles
US4927704A (en) * 1987-08-24 1990-05-22 General Electric Company Abrasion-resistant plastic articles and method for making them
US4964694A (en) * 1988-07-26 1990-10-23 Fujikura Ltd. Optical fiber and apparatus for producing same
DE3926592A1 (de) * 1989-08-11 1991-02-14 Rheydt Kabelwerk Ag Optische faser
US5141595A (en) * 1990-03-05 1992-08-25 Northrop Corporation Method and apparatus for carbon coating and boron-doped carbon coating
US5109442A (en) * 1990-03-28 1992-04-28 Fiberchem Inc. Waterproof optical fiber chemical sensor and method of making same
US5254372A (en) * 1991-02-27 1993-10-19 Nichols Technologies, Inc. Method and apparatus for plasma treatment of a filament
US5389195A (en) * 1991-03-07 1995-02-14 Minnesota Mining And Manufacturing Company Surface modification by accelerated plasma or ions
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
US5521351A (en) * 1994-08-30 1996-05-28 Wisconsin Alumni Research Foundation Method and apparatus for plasma surface treatment of the interior of hollow forms
US5683757A (en) * 1995-08-25 1997-11-04 Iskanderova; Zelina A. Surface modification of polymers and carbon-based materials by ion implantation and oxidative conversion
US6253704B1 (en) 1995-10-13 2001-07-03 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate
US6794301B2 (en) 1995-10-13 2004-09-21 Mattson Technology, Inc. Pulsed plasma processing of semiconductor substrates
US5983828A (en) * 1995-10-13 1999-11-16 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate
KR970064327A (ko) * 1996-02-27 1997-09-12 모리시다 요이치 고주파 전력 인가장치, 플라즈마 발생장치, 플라즈마 처리장치, 고주파 전력 인가방법, 플라즈마 발생방법 및 플라즈마 처리방법
FR2748851B1 (fr) * 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
FR2753540B1 (fr) * 1996-09-13 1998-11-13 Alcatel Cable Conducteur optique et son procede de fabrication
US20070122997A1 (en) * 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
US6033974A (en) * 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
US6291313B1 (en) 1997-05-12 2001-09-18 Silicon Genesis Corporation Method and device for controlled cleaving process
US6013563A (en) 1997-05-12 2000-01-11 Silicon Genesis Corporation Controlled cleaning process
US6027988A (en) * 1997-05-28 2000-02-22 The Regents Of The University Of California Method of separating films from bulk substrates by plasma immersion ion implantation
US6548382B1 (en) 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
FR2773261B1 (fr) * 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
US6291326B1 (en) 1998-06-23 2001-09-18 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
DE19847774C2 (de) * 1998-10-16 2002-10-17 Peter Foernsel Vorrichtung zur Plasmabehandlung von stab- oder fadenförmigem Material
US6221740B1 (en) 1999-08-10 2001-04-24 Silicon Genesis Corporation Substrate cleaving tool and method
US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
AU6905000A (en) * 1999-08-10 2001-03-05 Silicon Genesis Corporation A cleaving process to fabricate multilayered substrates using low implantation doses
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
US6536958B2 (en) * 2000-12-20 2003-03-25 Triquint Technology Holding Co. Optical device package with hermetically bonded fibers
FR2823599B1 (fr) 2001-04-13 2004-12-17 Commissariat Energie Atomique Substrat demomtable a tenue mecanique controlee et procede de realisation
US8187377B2 (en) * 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
FR2848336B1 (fr) * 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
FR2856844B1 (fr) * 2003-06-24 2006-02-17 Commissariat Energie Atomique Circuit integre sur puce de hautes performances
FR2857953B1 (fr) 2003-07-21 2006-01-13 Commissariat Energie Atomique Structure empilee, et procede pour la fabriquer
FR2861497B1 (fr) * 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
US7354815B2 (en) * 2003-11-18 2008-04-08 Silicon Genesis Corporation Method for fabricating semiconductor devices using strained silicon bearing material
FR2889887B1 (fr) * 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
FR2891281B1 (fr) 2005-09-28 2007-12-28 Commissariat Energie Atomique Procede de fabrication d'un element en couches minces.
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US7811900B2 (en) * 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
FR2910179B1 (fr) * 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
FR2922359B1 (fr) * 2007-10-12 2009-12-18 Commissariat Energie Atomique Procede de fabrication d'une structure micro-electronique impliquant un collage moleculaire
FR2925221B1 (fr) * 2007-12-17 2010-02-19 Commissariat Energie Atomique Procede de transfert d'une couche mince
US8330126B2 (en) * 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
US8329557B2 (en) * 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
FR2947098A1 (fr) * 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
US20120006468A1 (en) * 2010-07-07 2012-01-12 Schlumberger Technology Corporation Inline plasma treatment of an optical fiber cable structure
US20120321776A1 (en) * 2011-06-17 2012-12-20 Robert Vetrecin Process for in situ plasma polymerization of silicone coatings for surgical needles

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US313029A (en) * 1885-02-24 Method of making ornamental and other designs in relief
US3288638A (en) * 1962-10-09 1966-11-29 Martin Marietta Corp Method and apparatus for the treatment of plastic materials
US3471316A (en) * 1965-06-14 1969-10-07 Continental Can Co Method of forming a flexible organic layer on metal by a pulsed electrical abnormal glow discharge
US3761299A (en) * 1970-10-13 1973-09-25 Eastman Kodak Co Treating polymeric surfaces
US3677799A (en) * 1970-11-10 1972-07-18 Celanese Corp Vapor phase boron deposition by pulse discharge
DE2444926C3 (de) * 1974-09-20 1979-10-11 Felten & Guilleaume Carlswerk Ag, 5000 Koeln Verfahren und Vorrichtung zur Isolierung von Drähten in der Gasphase
US4091166A (en) * 1977-06-17 1978-05-23 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Boron trifluoride coatings for thermoplastic materials and method of applying same in glow discharge
CA1127890A (en) * 1979-02-01 1982-07-20 Paul W. France Optical fibres and coatings therefor
US4227907A (en) * 1979-10-22 1980-10-14 The United States Of America As Represented By The Secretary Of The Army Laser photochemical synthesis coating of optical fiber
JPS6059928B2 (ja) * 1980-09-08 1985-12-27 信越化学工業株式会社 塩化ビニル系樹脂成形品の表面処理方法
US4402993A (en) * 1981-03-20 1983-09-06 Gulf & Western Manufacturing Company Process for coating optical fibers
GB2105371B (en) * 1981-08-18 1985-10-02 Secr Defence Carbon deposited on fibre by glow discharge method
GB2105729B (en) * 1981-09-15 1985-06-12 Itt Ind Ltd Surface processing of a substrate material

Also Published As

Publication number Publication date
GB2144343A (en) 1985-03-06
ES534837A0 (es) 1985-11-01
JPS6036356A (ja) 1985-02-25
AU3129784A (en) 1985-02-07
GB8320773D0 (en) 1983-09-01
EP0135993A1 (en) 1985-04-03
US4568563A (en) 1986-02-04
ES8603087A1 (es) 1985-11-01

Similar Documents

Publication Publication Date Title
KR850001511A (ko) 광 파이버 피복 방법
ES2043826T3 (es) Metodo para deposicion de oxido de silicio aumentada en plasma.
KR980002289A (ko) 마이크로전자 장치용 다층 피막
KR950704535A (ko) 물품 보호막 및 보호방법(Protective film for articles and method)
CA2055306A1 (en) Hydrogen silsesquioxane resin fractions and their use as coating materials
KR950001951A (ko) 반도체 장치 제조방법
KR920021630A (ko) 하이드로겐 실세스퀴옥산 수지의 증기상 증착
NO20031199D0 (no) Smuss-motstandig belegg for glassoverflater
KR900006474A (ko) 플라즈마 가공방법 및 이의 생성물
DE69008862D1 (de) Procede de metallisation sous vide permettant le depot d'un compose organo-metallique sur un substrat.
ATE45971T1 (de) Verfahren zur herstellung von polymeren schichten.
ES2049135A1 (es) Procedimiento de formacion de un revestimiento sobre un substrato de vidrio caliente.
DK0411690T3 (da) Forgrundet metalsubstrat til formmetalanvendelser
DE3577730D1 (de) Beschichtungsverfahren.
AU2832689A (en) Coating reducing the reflection for an optical element made of organic material
TW367591B (en) Nanoporous dielectric films with graded density and process for making such films
ES2071055T3 (es) Procedimiento de deposito de capas finas.
DK144585A (da) Fremgangsmaade til overtraekning ved fremstilling af ikke-iriserende glasstruktur
DK0555518T3 (da) Fremgangsmåde til behandling af et oxidlag
FI841492A (fi) Ny, foerstaerkt fluoropolymerkomposition och foerfarande foer framstaellning daerav.
KR880009377A (ko) 자기 광학 메모리와 그 제조방법
JPS5730528A (en) Vapor-separating member
KR850003063A (ko) 무정형 중합성 할로실란 필름 및 그 형성체
JPS5241654A (en) Formation of roughened coating layer by electro-phoresis and coating c omposition for the same
MX9806787A (es) Peliculas con vacios orientadas uniaxialmente.

Legal Events

Date Code Title Description
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid