DE69008862D1 - Procede de metallisation sous vide permettant le depot d'un compose organo-metallique sur un substrat. - Google Patents

Procede de metallisation sous vide permettant le depot d'un compose organo-metallique sur un substrat.

Info

Publication number
DE69008862D1
DE69008862D1 DE69008862T DE69008862T DE69008862D1 DE 69008862 D1 DE69008862 D1 DE 69008862D1 DE 69008862 T DE69008862 T DE 69008862T DE 69008862 T DE69008862 T DE 69008862T DE 69008862 D1 DE69008862 D1 DE 69008862D1
Authority
DE
Germany
Prior art keywords
organo
metallique
procede
metallisation
substrat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69008862T
Other languages
English (en)
Other versions
DE69008862T2 (de
Inventor
Jose Mir
Alex Wernberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Application granted granted Critical
Publication of DE69008862D1 publication Critical patent/DE69008862D1/de
Publication of DE69008862T2 publication Critical patent/DE69008862T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/933—Germanium or silicon or Ge-Si on III-V
DE69008862T 1989-11-02 1990-10-22 Procede de metallisation sous vide permettant le depot d'un compose organo-metallique sur un substrat. Expired - Fee Related DE69008862T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/430,397 US4975299A (en) 1989-11-02 1989-11-02 Vapor deposition process for depositing an organo-metallic compound layer on a substrate
PCT/US1990/006051 WO1991006688A1 (en) 1989-11-02 1990-10-22 Vapor depostion process for depositing an organo-metallic compound layer on a substrate

Publications (2)

Publication Number Publication Date
DE69008862D1 true DE69008862D1 (de) 1994-06-16
DE69008862T2 DE69008862T2 (de) 1994-12-22

Family

ID=23707388

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69008862T Expired - Fee Related DE69008862T2 (de) 1989-11-02 1990-10-22 Procede de metallisation sous vide permettant le depot d'un compose organo-metallique sur un substrat.

Country Status (6)

Country Link
US (1) US4975299A (de)
EP (1) EP0497907B1 (de)
JP (1) JP3193372B2 (de)
AT (1) ATE105597T1 (de)
DE (1) DE69008862T2 (de)
WO (1) WO1991006688A1 (de)

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DE3631469A1 (de) * 1986-09-16 1988-03-17 Merck Patent Gmbh Metallorganische verbindungen
US5073410A (en) * 1989-10-16 1991-12-17 Eastman Kodak Company Thin films of metal phosphates and the method of their formation
US6111124A (en) 1997-10-30 2000-08-29 Advanced Technology Materials, Inc. Lewis base adducts of anhydrous mononuclear tris(β-diketonate) bismuth compositions for deposition of bismuth-containing films, and method of making the same
US6511706B1 (en) 1990-07-06 2003-01-28 Advanced Technology Materials, Inc. MOCVD of SBT using tetrahydrofuran-based solvent system for precursor delivery
WO1993004212A1 (en) * 1991-08-26 1993-03-04 Eastman Kodak Company Preparation of group iii element-group vi element compound films
US5381756A (en) * 1992-03-04 1995-01-17 Fujitsu Limited Magnesium doping in III-V compound semiconductor
DE4217735A1 (de) * 1992-05-29 1993-12-02 Merck Patent Gmbh Borhaltige organische Gruppe-V-Verbindungen
US5330629A (en) * 1992-12-15 1994-07-19 At&T Bell Laboratories Method for depositing aluminum layers on insulating oxide substrates
JPH06310438A (ja) * 1993-04-22 1994-11-04 Mitsubishi Electric Corp 化合物半導体気相成長用基板ホルダおよび化合物半導体気相成長装置
US5501751A (en) * 1994-12-08 1996-03-26 Alloy Surfaces Co. Inc. Pyrophoic material and method for making the same
US5964943A (en) * 1994-12-27 1999-10-12 Siemens Aktiengesellschaft Method of producing boron-doped monocrystalline silicon carbide
US5714391A (en) * 1995-05-17 1998-02-03 Matsushita Electric Industrial Co., Ltd. Method of manufacturing a compound semiconductor thin film for a photoelectric or solar cell device
US6303391B1 (en) 1997-06-26 2001-10-16 Advanced Technology Materials, Inc. Low temperature chemical vapor deposition process for forming bismuth-containing ceramic films useful in ferroelectric memory devices
US7005303B2 (en) * 1997-11-20 2006-02-28 Advanced Technology Materials, Inc. Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices
DE19855476A1 (de) * 1997-12-02 1999-06-17 Murata Manufacturing Co Lichtemittierendes Halbleiterelement mit einer Halbleiterschicht auf GaN-Basis, Verfahren zur Herstellung desselben und Verfahren zur Ausbildung einer Halbleiterschicht auf GaN-Basis
KR100319389B1 (ko) * 1999-06-15 2002-01-09 김충섭 유기갈륨 화합물, 이의 제조 방법 및 이를 이용한 질화갈륨 박막의 제조 방법
US6273951B1 (en) * 1999-06-16 2001-08-14 Micron Technology, Inc. Precursor mixtures for use in preparing layers on substrates
AU2002237658A1 (en) * 2000-11-20 2002-05-27 The Regents Of The University Of California Process for producing iii-v compound films by chemical deposition
US8617312B2 (en) * 2002-08-28 2013-12-31 Micron Technology, Inc. Systems and methods for forming layers that contain niobium and/or tantalum
US7115528B2 (en) * 2003-04-29 2006-10-03 Micron Technology, Inc. Systems and method for forming silicon oxide layers
CN101365821B (zh) * 2006-02-08 2011-10-05 Jsr株式会社 金属膜的形成方法
WO2008069259A1 (en) * 2006-12-05 2008-06-12 Semiconductor Energy Laboratory Co., Ltd. Film formation apparatus, film formation method, manufacturing apparatus, and method for manufacturing light-emitting device
US20090215225A1 (en) 2008-02-24 2009-08-27 Advanced Technology Materials, Inc. Tellurium compounds useful for deposition of tellurium containing materials
US8846437B2 (en) * 2010-10-01 2014-09-30 Applied Materials, Inc. High efficiency thin film transistor device with gallium arsenide layer
JP2016051824A (ja) * 2014-08-29 2016-04-11 高知県公立大学法人 エピタキシャル成長方法および成長装置ならびに量子井戸構造の作製方法
JP7391296B2 (ja) * 2017-10-07 2023-12-05 株式会社Flosfia 成膜方法
JP7023445B2 (ja) * 2017-10-07 2022-02-22 株式会社Flosfia 成膜方法

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Publication number Priority date Publication date Assignee Title
NL296876A (de) * 1962-08-23
US3705059A (en) * 1971-02-25 1972-12-05 Zenith Radio Corp Methods of producing p-typeness and p-n junctions in wide band gap semiconductor materials
US3754975A (en) * 1971-06-28 1973-08-28 Ransburg Electro Coating Corp Deposition materials and method
US3802967A (en) * 1971-08-27 1974-04-09 Rca Corp Iii-v compound on insulating substrate and its preparation and use
US4262630A (en) * 1977-01-04 1981-04-21 Bochkarev Ellin P Method of applying layers of source substance over recipient and device for realizing same
FR2403646A1 (fr) * 1977-09-16 1979-04-13 Anvar Procede de realisation d'un depot de compose semi-conducteur d'elements iii et v
GB2049636A (en) * 1979-05-31 1980-12-31 Vecht A Methods of Producing Thin Films
US4279670A (en) * 1979-08-06 1981-07-21 Raytheon Company Semiconductor device manufacturing methods utilizing a predetermined flow of reactive substance over a dopant material
US4427714A (en) * 1981-01-16 1984-01-24 Pa Management Consultants Limited Thin films of compounds and alloy compounds of Group III and Group V elements
JPS57134558A (en) * 1981-02-16 1982-08-19 Fuji Photo Film Co Ltd Production of organic vapor deposited thin film
US4594264A (en) * 1984-11-20 1986-06-10 Hughes Aircraft Company Method for forming gallium arsenide from thin solid films of gallium-arsenic complexes
US4759951A (en) * 1985-09-25 1988-07-26 Sharp Kabushiki Kaisha Heat-treating Cd-containing photoelectric conversion film in the presence of a cadmium halide
US4752455A (en) * 1986-05-27 1988-06-21 Kms Fusion, Inc. Pulsed laser microfabrication
JP2555045B2 (ja) * 1987-01-19 1996-11-20 株式会社日立製作所 薄膜形成方法及びその装置
US4780334A (en) * 1987-03-13 1988-10-25 General Electric Company Method and composition for depositing silicon dioxide layers
JPS63237517A (ja) * 1987-03-26 1988-10-04 Canon Inc ３−５族化合物膜の選択形成方法
US4833103A (en) * 1987-06-16 1989-05-23 Eastman Kodak Company Process for depositing a III-V compound layer on a substrate
US4895735A (en) * 1988-03-01 1990-01-23 Texas Instruments Incorporated Radiation induced pattern deposition

Also Published As

Publication number Publication date
EP0497907A1 (de) 1992-08-12
ATE105597T1 (de) 1994-05-15
JP3193372B2 (ja) 2001-07-30
US4975299A (en) 1990-12-04
EP0497907B1 (de) 1994-05-11
JPH05503319A (ja) 1993-06-03
DE69008862T2 (de) 1994-12-22
WO1991006688A1 (en) 1991-05-16

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee