FR2426743A1 - Procede et dispositif de revetement metallique par depot sous forme de vapeurs - Google Patents

Procede et dispositif de revetement metallique par depot sous forme de vapeurs

Info

Publication number
FR2426743A1
FR2426743A1 FR7913339A FR7913339A FR2426743A1 FR 2426743 A1 FR2426743 A1 FR 2426743A1 FR 7913339 A FR7913339 A FR 7913339A FR 7913339 A FR7913339 A FR 7913339A FR 2426743 A1 FR2426743 A1 FR 2426743A1
Authority
FR
France
Prior art keywords
aluminum
triisobutylaluminum
parts
argon
vapors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7913339A
Other languages
English (en)
French (fr)
Other versions
FR2426743B1 (enrdf_load_stackoverflow
Inventor
Rudolf August Herbert Heinecke
Ronald Carl Stern
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of FR2426743A1 publication Critical patent/FR2426743A1/fr
Application granted granted Critical
Publication of FR2426743B1 publication Critical patent/FR2426743B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C23C16/20—Deposition of aluminium only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
FR7913339A 1978-05-25 1979-05-25 Procede et dispositif de revetement metallique par depot sous forme de vapeurs Granted FR2426743A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB22633/78A GB1594399A (en) 1978-05-25 1978-05-25 Metal deposition

Publications (2)

Publication Number Publication Date
FR2426743A1 true FR2426743A1 (fr) 1979-12-21
FR2426743B1 FR2426743B1 (enrdf_load_stackoverflow) 1983-08-26

Family

ID=10182595

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7913339A Granted FR2426743A1 (fr) 1978-05-25 1979-05-25 Procede et dispositif de revetement metallique par depot sous forme de vapeurs

Country Status (4)

Country Link
JP (1) JPS54163793A (enrdf_load_stackoverflow)
FR (1) FR2426743A1 (enrdf_load_stackoverflow)
GB (1) GB1594399A (enrdf_load_stackoverflow)
IT (1) IT1192727B (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5985857A (ja) * 1982-11-08 1984-05-17 Semiconductor Energy Lab Co Ltd アルミニユ−ム被膜の作製方法
EP0221156B1 (en) * 1985-05-03 1989-10-11 AT&T Corp. Method of making a device comprising a patterned aluminum layer

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2921868A (en) * 1956-06-07 1960-01-19 Union Carbide Corp Aluminum gas plating of various substrates
FR1210117A (fr) * 1958-09-02 1960-03-07 Ohio Commw Eng Co Dépôt d'aluminium à partir d'un composé gazeux, en particulier du triisobutyle d'aluminium
FR1405106A (fr) * 1964-08-26 1965-07-02 Union Carbide Corp Procédé pour déposer des revêtements métallliques dans des trous, des tubes, des fentes, des fissures et autres cavités analogues

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2921868A (en) * 1956-06-07 1960-01-19 Union Carbide Corp Aluminum gas plating of various substrates
FR1210117A (fr) * 1958-09-02 1960-03-07 Ohio Commw Eng Co Dépôt d'aluminium à partir d'un composé gazeux, en particulier du triisobutyle d'aluminium
FR1405106A (fr) * 1964-08-26 1965-07-02 Union Carbide Corp Procédé pour déposer des revêtements métallliques dans des trous, des tubes, des fentes, des fissures et autres cavités analogues

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/68 *

Also Published As

Publication number Publication date
JPS641550B2 (enrdf_load_stackoverflow) 1989-01-11
IT1192727B (it) 1988-05-04
FR2426743B1 (enrdf_load_stackoverflow) 1983-08-26
GB1594399A (en) 1981-07-30
JPS54163793A (en) 1979-12-26
IT7922732A0 (it) 1979-05-17

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Legal Events

Date Code Title Description
ST Notification of lapse