JPS54163793A - Aluminum thermal decomposition depositing method and apparatus - Google Patents
Aluminum thermal decomposition depositing method and apparatusInfo
- Publication number
- JPS54163793A JPS54163793A JP6488579A JP6488579A JPS54163793A JP S54163793 A JPS54163793 A JP S54163793A JP 6488579 A JP6488579 A JP 6488579A JP 6488579 A JP6488579 A JP 6488579A JP S54163793 A JPS54163793 A JP S54163793A
- Authority
- JP
- Japan
- Prior art keywords
- thermal decomposition
- depositing method
- aluminum thermal
- aluminum
- depositing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title 1
- 229910052782 aluminium Inorganic materials 0.000 title 1
- 238000000151 deposition Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000005979 thermal decomposition reaction Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
- C23C16/20—Deposition of aluminium only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB22633/78A GB1594399A (en) | 1978-05-25 | 1978-05-25 | Metal deposition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54163793A true JPS54163793A (en) | 1979-12-26 |
| JPS641550B2 JPS641550B2 (ja) | 1989-01-11 |
Family
ID=10182595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6488579A Granted JPS54163793A (en) | 1978-05-25 | 1979-05-25 | Aluminum thermal decomposition depositing method and apparatus |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS54163793A (ja) |
| FR (1) | FR2426743A1 (ja) |
| GB (1) | GB1594399A (ja) |
| IT (1) | IT1192727B (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5985857A (ja) * | 1982-11-08 | 1984-05-17 | Semiconductor Energy Lab Co Ltd | アルミニユ−ム被膜の作製方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0221156B1 (en) * | 1985-05-03 | 1989-10-11 | AT&T Corp. | Method of making a device comprising a patterned aluminum layer |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2921868A (en) * | 1956-06-07 | 1960-01-19 | Union Carbide Corp | Aluminum gas plating of various substrates |
| FR1210117A (fr) * | 1958-09-02 | 1960-03-07 | Ohio Commw Eng Co | Dépôt d'aluminium à partir d'un composé gazeux, en particulier du triisobutyle d'aluminium |
| FR1405106A (fr) * | 1964-08-26 | 1965-07-02 | Union Carbide Corp | Procédé pour déposer des revêtements métallliques dans des trous, des tubes, des fentes, des fissures et autres cavités analogues |
-
1978
- 1978-05-25 GB GB22633/78A patent/GB1594399A/en not_active Expired
-
1979
- 1979-05-17 IT IT22732/79A patent/IT1192727B/it active
- 1979-05-25 JP JP6488579A patent/JPS54163793A/ja active Granted
- 1979-05-25 FR FR7913339A patent/FR2426743A1/fr active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5985857A (ja) * | 1982-11-08 | 1984-05-17 | Semiconductor Energy Lab Co Ltd | アルミニユ−ム被膜の作製方法 |
| JPH036222B2 (ja) * | 1982-11-08 | 1991-01-29 | Handotai Energy Kenkyusho |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1594399A (en) | 1981-07-30 |
| IT1192727B (it) | 1988-05-04 |
| IT7922732A0 (it) | 1979-05-17 |
| FR2426743A1 (fr) | 1979-12-21 |
| FR2426743B1 (ja) | 1983-08-26 |
| JPS641550B2 (ja) | 1989-01-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB2014481B (en) | Coating apparatus and method | |
| GB2020269B (en) | Cycloalkylatriazoles and process for obtaining same | |
| GB2040802B (en) | Laminating method and apparatus | |
| IL57686A0 (en) | Interferometric method and apparatus | |
| JPS55141422A (en) | Method and apparatus for preparing aluminum alkoxide | |
| JPS54114546A (en) | Coating method and apparatus therefor | |
| GB2022996B (en) | Method and apparatus for manufacturing | |
| GB2014217B (en) | Method and apparatus for forming holes | |
| GB2017558B (en) | Apparatus and process for metal-plastics composite foil | |
| GB2018993B (en) | Unerwater mapping apparatus and method | |
| GB2025491B (en) | Apparatus and method for positioning one part relative to another part | |
| GB2022168B (en) | Pipeburying underwater-trenching apparatus and method | |
| GB2044672B (en) | Laminating process and apparatus | |
| IL57498A0 (en) | Method and apparatus for jumigating | |
| GB2037789B (en) | Process and apparatus for demonomerizing polycapronamide | |
| JPS54155580A (en) | Deposit forming method and device for performing said method | |
| JPS54103470A (en) | Method and apparatus for taking out formed products | |
| JPS54163793A (en) | Aluminum thermal decomposition depositing method and apparatus | |
| JPS54115643A (en) | Coating method and apparatus | |
| IL57608A0 (en) | Printing method and apparatus | |
| DE3070212D1 (en) | Coating method and apparatus | |
| JPS5485112A (en) | Method and apparatus for producing aluminium | |
| JPS54119542A (en) | Method and apparatus for coating | |
| GB2016134B (en) | Gas cooling method and apparatus | |
| JPS5426285A (en) | Coat formation apparatus and method |