JPS641550B2 - - Google Patents
Info
- Publication number
- JPS641550B2 JPS641550B2 JP54064885A JP6488579A JPS641550B2 JP S641550 B2 JPS641550 B2 JP S641550B2 JP 54064885 A JP54064885 A JP 54064885A JP 6488579 A JP6488579 A JP 6488579A JP S641550 B2 JPS641550 B2 JP S641550B2
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- tiba
- sample
- temperature
- argon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
- C23C16/20—Deposition of aluminium only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB22633/78A GB1594399A (en) | 1978-05-25 | 1978-05-25 | Metal deposition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54163793A JPS54163793A (en) | 1979-12-26 |
| JPS641550B2 true JPS641550B2 (enrdf_load_stackoverflow) | 1989-01-11 |
Family
ID=10182595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6488579A Granted JPS54163793A (en) | 1978-05-25 | 1979-05-25 | Aluminum thermal decomposition depositing method and apparatus |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS54163793A (enrdf_load_stackoverflow) |
| FR (1) | FR2426743A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1594399A (enrdf_load_stackoverflow) |
| IT (1) | IT1192727B (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5985857A (ja) * | 1982-11-08 | 1984-05-17 | Semiconductor Energy Lab Co Ltd | アルミニユ−ム被膜の作製方法 |
| EP0221156B1 (en) * | 1985-05-03 | 1989-10-11 | AT&T Corp. | Method of making a device comprising a patterned aluminum layer |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2921868A (en) * | 1956-06-07 | 1960-01-19 | Union Carbide Corp | Aluminum gas plating of various substrates |
| FR1210117A (fr) * | 1958-09-02 | 1960-03-07 | Ohio Commw Eng Co | Dépôt d'aluminium à partir d'un composé gazeux, en particulier du triisobutyle d'aluminium |
| FR1405106A (fr) * | 1964-08-26 | 1965-07-02 | Union Carbide Corp | Procédé pour déposer des revêtements métallliques dans des trous, des tubes, des fentes, des fissures et autres cavités analogues |
-
1978
- 1978-05-25 GB GB22633/78A patent/GB1594399A/en not_active Expired
-
1979
- 1979-05-17 IT IT22732/79A patent/IT1192727B/it active
- 1979-05-25 FR FR7913339A patent/FR2426743A1/fr active Granted
- 1979-05-25 JP JP6488579A patent/JPS54163793A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| IT7922732A0 (it) | 1979-05-17 |
| IT1192727B (it) | 1988-05-04 |
| GB1594399A (en) | 1981-07-30 |
| FR2426743A1 (fr) | 1979-12-21 |
| FR2426743B1 (enrdf_load_stackoverflow) | 1983-08-26 |
| JPS54163793A (en) | 1979-12-26 |
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