FR2409599A1 - Circuit logique integre - Google Patents
Circuit logique integreInfo
- Publication number
- FR2409599A1 FR2409599A1 FR7832509A FR7832509A FR2409599A1 FR 2409599 A1 FR2409599 A1 FR 2409599A1 FR 7832509 A FR7832509 A FR 7832509A FR 7832509 A FR7832509 A FR 7832509A FR 2409599 A1 FR2409599 A1 FR 2409599A1
- Authority
- FR
- France
- Prior art keywords
- transistor
- auxiliary
- logic circuit
- preferredly
- incorporated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0821—Combination of lateral and vertical transistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
- Logic Circuits (AREA)
- Bipolar Transistors (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7712649A NL7712649A (nl) | 1977-11-17 | 1977-11-17 | Geientegreerde schakeling. |
NL7800407A NL7800407A (nl) | 1977-11-17 | 1978-01-13 | Geientegreerde logische schakeling. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2409599A1 true FR2409599A1 (fr) | 1979-06-15 |
FR2409599B1 FR2409599B1 (es) | 1985-01-18 |
Family
ID=26645363
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7832509A Granted FR2409599A1 (fr) | 1977-11-17 | 1978-11-17 | Circuit logique integre |
Country Status (10)
Country | Link |
---|---|
JP (1) | JPS5478988A (es) |
BR (1) | BR7807497A (es) |
CA (1) | CA1129973A (es) |
CH (1) | CH637788A5 (es) |
DE (1) | DE2848632C2 (es) |
ES (1) | ES475105A1 (es) |
FR (1) | FR2409599A1 (es) |
GB (1) | GB2008318B (es) |
IT (1) | IT1100262B (es) |
NL (1) | NL7800407A (es) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3676714A (en) * | 1969-04-18 | 1972-07-11 | Philips Corp | Semiconductor device |
FR2297522A1 (fr) * | 1975-01-10 | 1976-08-06 | Plessey Handel Investment Ag | Structure a transistors a faible duree de stockage |
-
1978
- 1978-01-13 NL NL7800407A patent/NL7800407A/xx not_active Application Discontinuation
- 1978-11-09 CA CA316,085A patent/CA1129973A/en not_active Expired
- 1978-11-09 DE DE2848632A patent/DE2848632C2/de not_active Expired
- 1978-11-14 GB GB7844334A patent/GB2008318B/en not_active Expired
- 1978-11-14 BR BR7807497A patent/BR7807497A/pt unknown
- 1978-11-14 IT IT29768/78A patent/IT1100262B/it active
- 1978-11-14 CH CH1170278A patent/CH637788A5/de not_active IP Right Cessation
- 1978-11-15 ES ES475105A patent/ES475105A1/es not_active Expired
- 1978-11-17 JP JP14215478A patent/JPS5478988A/ja active Granted
- 1978-11-17 FR FR7832509A patent/FR2409599A1/fr active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3676714A (en) * | 1969-04-18 | 1972-07-11 | Philips Corp | Semiconductor device |
FR2297522A1 (fr) * | 1975-01-10 | 1976-08-06 | Plessey Handel Investment Ag | Structure a transistors a faible duree de stockage |
Non-Patent Citations (2)
Title |
---|
EXBK/71 * |
EXBK/77 * |
Also Published As
Publication number | Publication date |
---|---|
GB2008318A (en) | 1979-05-31 |
FR2409599B1 (es) | 1985-01-18 |
BR7807497A (pt) | 1979-07-17 |
JPS5478988A (en) | 1979-06-23 |
GB2008318B (en) | 1982-03-31 |
JPS5719866B2 (es) | 1982-04-24 |
DE2848632C2 (de) | 1985-12-19 |
CA1129973A (en) | 1982-08-17 |
ES475105A1 (es) | 1979-04-01 |
DE2848632A1 (de) | 1979-05-23 |
IT1100262B (it) | 1985-09-28 |
CH637788A5 (de) | 1983-08-15 |
IT7829768A0 (it) | 1978-11-14 |
NL7800407A (nl) | 1979-05-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR840005629A (ko) | 전계효과 트랜지스터와 바이폴라트랜지스터를 조합한 게이트회로 | |
GB1413389A (en) | Mos type semiconductor ic device | |
KR850001647A (ko) | 바이폴라 트랜지스터와 전계효과 트랜지스터와의 복합회로 | |
CH648453GA3 (es) | ||
GB1532428A (en) | Integrated circuits | |
FR2399738A1 (fr) | Dispositif semi-conducteur comportant une capacite-mos | |
FR2356273A1 (fr) | Dispositif de protection d'entree pour semi-conducteurs mos | |
KR870009542A (ko) | Mosfet의 소오스가 부하에 연결되는 mosfet를 동작시키기 위한 회로배열 | |
JPS6471219A (en) | Buffer circuit and integrated circuit structure | |
KR860007753A (ko) | 반도체 집전회로 | |
GB1527095A (en) | Storage arrangements | |
FR2384389A1 (fr) | Modulation de polarisation du substrat pour ameliorer le rendement de circuits mosfet | |
FR2400258A1 (fr) | Transistor a effet de champ et a sensibilite chimique et son procede de realisation | |
FR2409599A1 (fr) | Circuit logique integre | |
KR890009004A (ko) | 바이폴라-cmos 회로 | |
JPS6471216A (en) | Buffer circuit | |
KR910019340A (ko) | 반도체 집적회로 | |
FR2365213A1 (fr) | Transistor bipolaire lateral et circuits utilisant ce transistor | |
FR2396470A1 (fr) | Circuit logique a transistors a effet de champ travaillant en mode d'appauvrissement/enrichissement | |
FR2399711A1 (fr) | Cellule de memoire a acces direct | |
KR900701046A (ko) | 상보형 mos 회로기술을 이용한 래치업 방지회로를 가진 집적회로 | |
GB1053428A (es) | ||
FR2408191A1 (fr) | Dispositif de memoire metal-oxyde-semi-conducteur a n canaux | |
ES475104A1 (es) | Un circuito logico integrado. | |
FR2413790A1 (fr) | Dispositif a semi-conducteurs |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |