ES475105A1 - Un circuito logico integrado - Google Patents
Un circuito logico integradoInfo
- Publication number
- ES475105A1 ES475105A1 ES475105A ES475105A ES475105A1 ES 475105 A1 ES475105 A1 ES 475105A1 ES 475105 A ES475105 A ES 475105A ES 475105 A ES475105 A ES 475105A ES 475105 A1 ES475105 A1 ES 475105A1
- Authority
- ES
- Spain
- Prior art keywords
- transistor
- inverter
- auxiliary
- integrated logic
- incorporated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002800 charge carrier Substances 0.000 abstract 1
- 230000000295 complement effect Effects 0.000 abstract 1
- 229920006395 saturated elastomer Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0821—Combination of lateral and vertical transistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
- Logic Circuits (AREA)
- Bipolar Transistors (AREA)
- Electronic Switches (AREA)
Abstract
Un circuito lógico integrado que tiene una entrada de señal que está formada por una base de un transistor bipolar y que tiene una pluralidad de salidas de señal cada una de las cuales está acoplada, a través de un diodo, al colector del transistor bipolar, comprendiendo la entrada de señal medios para suministrar corriente, comprendiendo el circuito integrado un cuerpo semiconductor que tiene una superficie principal a la cual son contiguas varias regiones de superficie de un primer tipo de conductividad que están situadas sobre una región de substrato común de un segundo tipo de conductividad opuesto al primero.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7712649A NL7712649A (nl) | 1977-11-17 | 1977-11-17 | Geientegreerde schakeling. |
NL7800407A NL7800407A (nl) | 1977-11-17 | 1978-01-13 | Geientegreerde logische schakeling. |
Publications (1)
Publication Number | Publication Date |
---|---|
ES475105A1 true ES475105A1 (es) | 1979-04-01 |
Family
ID=26645363
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES475105A Expired ES475105A1 (es) | 1977-11-17 | 1978-11-15 | Un circuito logico integrado |
Country Status (10)
Country | Link |
---|---|
JP (1) | JPS5478988A (es) |
BR (1) | BR7807497A (es) |
CA (1) | CA1129973A (es) |
CH (1) | CH637788A5 (es) |
DE (1) | DE2848632C2 (es) |
ES (1) | ES475105A1 (es) |
FR (1) | FR2409599A1 (es) |
GB (1) | GB2008318B (es) |
IT (1) | IT1100262B (es) |
NL (1) | NL7800407A (es) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL161923C (nl) * | 1969-04-18 | 1980-03-17 | Philips Nv | Halfgeleiderinrichting. |
GB1490631A (en) * | 1975-01-10 | 1977-11-02 | Plessey Co Ltd | Transistor arrangement having low charge storage |
-
1978
- 1978-01-13 NL NL7800407A patent/NL7800407A/xx not_active Application Discontinuation
- 1978-11-09 CA CA316,085A patent/CA1129973A/en not_active Expired
- 1978-11-09 DE DE2848632A patent/DE2848632C2/de not_active Expired
- 1978-11-14 GB GB7844334A patent/GB2008318B/en not_active Expired
- 1978-11-14 CH CH1170278A patent/CH637788A5/de not_active IP Right Cessation
- 1978-11-14 IT IT29768/78A patent/IT1100262B/it active
- 1978-11-14 BR BR7807497A patent/BR7807497A/pt unknown
- 1978-11-15 ES ES475105A patent/ES475105A1/es not_active Expired
- 1978-11-17 JP JP14215478A patent/JPS5478988A/ja active Granted
- 1978-11-17 FR FR7832509A patent/FR2409599A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
NL7800407A (nl) | 1979-05-21 |
CH637788A5 (de) | 1983-08-15 |
FR2409599B1 (es) | 1985-01-18 |
JPS5719866B2 (es) | 1982-04-24 |
CA1129973A (en) | 1982-08-17 |
BR7807497A (pt) | 1979-07-17 |
IT7829768A0 (it) | 1978-11-14 |
DE2848632A1 (de) | 1979-05-23 |
IT1100262B (it) | 1985-09-28 |
GB2008318A (en) | 1979-05-31 |
FR2409599A1 (fr) | 1979-06-15 |
DE2848632C2 (de) | 1985-12-19 |
GB2008318B (en) | 1982-03-31 |
JPS5478988A (en) | 1979-06-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FD1A | Patent lapsed |
Effective date: 19990201 |