ES475105A1 - Un circuito logico integrado - Google Patents

Un circuito logico integrado

Info

Publication number
ES475105A1
ES475105A1 ES475105A ES475105A ES475105A1 ES 475105 A1 ES475105 A1 ES 475105A1 ES 475105 A ES475105 A ES 475105A ES 475105 A ES475105 A ES 475105A ES 475105 A1 ES475105 A1 ES 475105A1
Authority
ES
Spain
Prior art keywords
transistor
inverter
auxiliary
integrated logic
incorporated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES475105A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL7712649A external-priority patent/NL7712649A/xx
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES475105A1 publication Critical patent/ES475105A1/es
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0214Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233Integrated injection logic structures [I2L]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821Combination of lateral and vertical transistors only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826Combination of vertical complementary transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Electronic Switches (AREA)

Abstract

Un circuito lógico integrado que tiene una entrada de señal que está formada por una base de un transistor bipolar y que tiene una pluralidad de salidas de señal cada una de las cuales está acoplada, a través de un diodo, al colector del transistor bipolar, comprendiendo la entrada de señal medios para suministrar corriente, comprendiendo el circuito integrado un cuerpo semiconductor que tiene una superficie principal a la cual son contiguas varias regiones de superficie de un primer tipo de conductividad que están situadas sobre una región de substrato común de un segundo tipo de conductividad opuesto al primero.
ES475105A 1977-11-17 1978-11-15 Un circuito logico integrado Expired ES475105A1 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7712649A NL7712649A (nl) 1977-11-17 1977-11-17 Geientegreerde schakeling.
NL7800407A NL7800407A (nl) 1977-11-17 1978-01-13 Geientegreerde logische schakeling.

Publications (1)

Publication Number Publication Date
ES475105A1 true ES475105A1 (es) 1979-04-01

Family

ID=26645363

Family Applications (1)

Application Number Title Priority Date Filing Date
ES475105A Expired ES475105A1 (es) 1977-11-17 1978-11-15 Un circuito logico integrado

Country Status (10)

Country Link
JP (1) JPS5478988A (es)
BR (1) BR7807497A (es)
CA (1) CA1129973A (es)
CH (1) CH637788A5 (es)
DE (1) DE2848632C2 (es)
ES (1) ES475105A1 (es)
FR (1) FR2409599A1 (es)
GB (1) GB2008318B (es)
IT (1) IT1100262B (es)
NL (1) NL7800407A (es)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL161923C (nl) * 1969-04-18 1980-03-17 Philips Nv Halfgeleiderinrichting.
GB1490631A (en) * 1975-01-10 1977-11-02 Plessey Co Ltd Transistor arrangement having low charge storage

Also Published As

Publication number Publication date
NL7800407A (nl) 1979-05-21
CH637788A5 (de) 1983-08-15
FR2409599B1 (es) 1985-01-18
JPS5719866B2 (es) 1982-04-24
CA1129973A (en) 1982-08-17
BR7807497A (pt) 1979-07-17
IT7829768A0 (it) 1978-11-14
DE2848632A1 (de) 1979-05-23
IT1100262B (it) 1985-09-28
GB2008318A (en) 1979-05-31
FR2409599A1 (fr) 1979-06-15
DE2848632C2 (de) 1985-12-19
GB2008318B (en) 1982-03-31
JPS5478988A (en) 1979-06-23

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 19990201