FR2408221A1 - Structure du type metal-germanium - arseniure de gallium et oscillateur utilisant une telle structure - Google Patents
Structure du type metal-germanium - arseniure de gallium et oscillateur utilisant une telle structureInfo
- Publication number
- FR2408221A1 FR2408221A1 FR7729744A FR7729744A FR2408221A1 FR 2408221 A1 FR2408221 A1 FR 2408221A1 FR 7729744 A FR7729744 A FR 7729744A FR 7729744 A FR7729744 A FR 7729744A FR 2408221 A1 FR2408221 A1 FR 2408221A1
- Authority
- FR
- France
- Prior art keywords
- germanium
- gallium arsenide
- oscillator
- metal
- mode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 title abstract 3
- 229910052732 germanium Inorganic materials 0.000 abstract 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes
Abstract
L'INVENTION CONCERNE UNE STRUCTURE DESTINEE A OSCILLER EN MODE DIT A "TEMPS DE TRANSIT" (MODE IMPATT DE LA TERMINOLOGIE ANGLO-SAXONNE). POUR AMELIORER LE RENDEMENT, ON CHERCHE A AVOIR UNE ZONE D'AVALANCHE LIMITEE A L'EPAISSEUR D'UNE COUCHE MINCE D'UN MATERIAU SEMICONDUCTEUR DIFFERENT DE CELUI QUI CONSTITUE LA ZONE DE TRANSIT. LA STRUCTURE SELON L'INVENTION COMPORTE UNE COUCHE METALLIQUE 1, UNE COUCHE DE GERMANIUM 2 A FORTE RESISTIVITE A FAIBLE TENSION DE CLAQUAGE, EPITAXIEE SUR UN SUBSTRAT 3 EN ARSENIURE DE GALLIUM MONOCRISTALLIN. LE DOPAGE DU GERMANIUM EST A FAIBLE TAUX, CELUI DE L'ARSENIURE DE GALLIUM EST PLUS ELEVE (ET DE TYPE N), DE MANIERE A AVOIR UN CHAMP CRITIQUE PLUS ELEVE QUE CELUI DU GERMANIUM. APPLICATION A LA GENERATION D'HYPERFREQUENCES.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7729744A FR2408221A1 (fr) | 1977-10-04 | 1977-10-04 | Structure du type metal-germanium - arseniure de gallium et oscillateur utilisant une telle structure |
JP12142478A JPS5460871A (en) | 1977-10-04 | 1978-10-02 | Semiconductor construction |
DE19782843071 DE2843071A1 (de) | 1977-10-04 | 1978-10-03 | Halbleiterstruktur |
GB7839190A GB2005472B (en) | 1977-10-04 | 1978-10-03 | Structure of the metal-germanium-gallium arsenide type andan oscillator using a structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7729744A FR2408221A1 (fr) | 1977-10-04 | 1977-10-04 | Structure du type metal-germanium - arseniure de gallium et oscillateur utilisant une telle structure |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2408221A1 true FR2408221A1 (fr) | 1979-06-01 |
FR2408221B1 FR2408221B1 (fr) | 1982-02-19 |
Family
ID=9196058
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7729744A Granted FR2408221A1 (fr) | 1977-10-04 | 1977-10-04 | Structure du type metal-germanium - arseniure de gallium et oscillateur utilisant une telle structure |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5460871A (fr) |
DE (1) | DE2843071A1 (fr) |
FR (1) | FR2408221A1 (fr) |
GB (1) | GB2005472B (fr) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3466512A (en) * | 1967-05-29 | 1969-09-09 | Bell Telephone Labor Inc | Impact avalanche transit time diodes with heterojunction structure |
FR2258710A1 (fr) * | 1974-01-18 | 1975-08-18 | Univ Connecticut | |
FR2269235A1 (fr) * | 1974-04-25 | 1975-11-21 | Int Standard Electric Corp |
-
1977
- 1977-10-04 FR FR7729744A patent/FR2408221A1/fr active Granted
-
1978
- 1978-10-02 JP JP12142478A patent/JPS5460871A/ja active Pending
- 1978-10-03 DE DE19782843071 patent/DE2843071A1/de not_active Withdrawn
- 1978-10-03 GB GB7839190A patent/GB2005472B/en not_active Expired
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3466512A (en) * | 1967-05-29 | 1969-09-09 | Bell Telephone Labor Inc | Impact avalanche transit time diodes with heterojunction structure |
FR2258710A1 (fr) * | 1974-01-18 | 1975-08-18 | Univ Connecticut | |
FR2269235A1 (fr) * | 1974-04-25 | 1975-11-21 | Int Standard Electric Corp |
Also Published As
Publication number | Publication date |
---|---|
JPS5460871A (en) | 1979-05-16 |
FR2408221B1 (fr) | 1982-02-19 |
GB2005472A (en) | 1979-04-19 |
GB2005472B (en) | 1982-04-15 |
DE2843071A1 (de) | 1979-04-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CL | Concession to grant licences | ||
ST | Notification of lapse |