FR2386904A1 - Procede de croissance epitaxiale d'arseniure de gallium et dispositif semi-conducteur a l'arseniure de gallium - Google Patents
Procede de croissance epitaxiale d'arseniure de gallium et dispositif semi-conducteur a l'arseniure de galliumInfo
- Publication number
- FR2386904A1 FR2386904A1 FR7810421A FR7810421A FR2386904A1 FR 2386904 A1 FR2386904 A1 FR 2386904A1 FR 7810421 A FR7810421 A FR 7810421A FR 7810421 A FR7810421 A FR 7810421A FR 2386904 A1 FR2386904 A1 FR 2386904A1
- Authority
- FR
- France
- Prior art keywords
- gallium arsenide
- semiconductor device
- epitaxial growth
- growth process
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title abstract 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 title abstract 5
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 230000005669 field effect Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000005012 migration Effects 0.000 abstract 1
- 238000013508 migration Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/906—Special atmosphere other than vacuum or inert
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/056—Gallium arsenide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Recrystallisation Techniques (AREA)
- Bipolar Transistors (AREA)
Abstract
L'invention concerne la fabrication des dispositifs à semiconducteurs. Selon l'invention, on réalise un dispositif semiconducteur comportant un substrat 40 arséniure de gallium, en aisant croître sur ce substrat une couche tampon 41 en arséniure de gallium faiblement dopé, et une couche active 42, en arséniure de gallium plus fortement dopé. La couche tampon empêche la migration des impuretés de dopage de substrat vers la couche active. Application à la fabrication de transistors à effet de champ.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/785,881 US4155784A (en) | 1977-04-08 | 1977-04-08 | Process for epitaxially growing a gallium arsenide layer having reduced silicon contaminants on a gallium arsenide substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2386904A1 true FR2386904A1 (fr) | 1978-11-03 |
Family
ID=25136922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7810421A Withdrawn FR2386904A1 (fr) | 1977-04-08 | 1978-04-07 | Procede de croissance epitaxiale d'arseniure de gallium et dispositif semi-conducteur a l'arseniure de gallium |
Country Status (5)
Country | Link |
---|---|
US (1) | US4155784A (fr) |
JP (1) | JPS53126263A (fr) |
FR (1) | FR2386904A1 (fr) |
GB (1) | GB1601614A (fr) |
NL (1) | NL7803711A (fr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4238252A (en) * | 1979-07-11 | 1980-12-09 | Hughes Aircraft Company | Process for growing indium phosphide of controlled purity |
JPS5728322A (en) * | 1980-07-28 | 1982-02-16 | Fujitsu Ltd | Formation of semiconductor single crystal layer |
US4357180A (en) * | 1981-01-26 | 1982-11-02 | The United States Of America As Represented By The Secretary Of The Navy | Annealing of ion-implanted GaAs and InP semiconductors |
US4488914A (en) * | 1982-10-29 | 1984-12-18 | The United States Of America As Represented By The Secretary Of The Air Force | Process for the epitaxial deposition of III-V compounds utilizing a continuous in-situ hydrogen chloride etch |
JP3109659B2 (ja) * | 1997-09-05 | 2000-11-20 | スタンレー電気株式会社 | 結晶成長方法および装置 |
JP2003124235A (ja) * | 2001-10-17 | 2003-04-25 | Sumitomo Electric Ind Ltd | Ii−vi族化合物半導体、その熱処理方法およびその熱処理装置 |
EP2464760A4 (fr) | 2009-08-12 | 2013-08-28 | Univ Georgia State Res Found | Appareils et procédés de déposition en phase vapeur par procédé chimique à haute pression, et compositions produites avec ceux-ci |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3310425A (en) * | 1963-06-28 | 1967-03-21 | Rca Corp | Method of depositing epitaxial layers of gallium arsenide |
NL6700080A (fr) * | 1966-01-03 | 1967-07-04 | ||
US3394390A (en) * | 1965-03-31 | 1968-07-23 | Texas Instruments Inc | Method for making compond semiconductor materials |
US3471324A (en) * | 1966-12-23 | 1969-10-07 | Texas Instruments Inc | Epitaxial gallium arsenide |
CH461646A (de) * | 1967-04-18 | 1968-08-31 | Ibm | Feld-Effekt-Transistor und Verfahren zu seiner Herstellung |
US3767984A (en) * | 1969-09-03 | 1973-10-23 | Nippon Electric Co | Schottky barrier type field effect transistor |
US3904449A (en) * | 1974-05-09 | 1975-09-09 | Bell Telephone Labor Inc | Growth technique for high efficiency gallium arsenide impatt diodes |
US3930908A (en) * | 1974-09-30 | 1976-01-06 | Rca Corporation | Accurate control during vapor phase epitaxy |
-
1977
- 1977-04-08 US US05/785,881 patent/US4155784A/en not_active Expired - Lifetime
-
1978
- 1978-04-05 GB GB13282/78A patent/GB1601614A/en not_active Expired
- 1978-04-07 NL NL7803711A patent/NL7803711A/xx not_active Application Discontinuation
- 1978-04-07 FR FR7810421A patent/FR2386904A1/fr not_active Withdrawn
- 1978-04-07 JP JP4112478A patent/JPS53126263A/ja active Pending
Non-Patent Citations (2)
Title |
---|
EXBK/70 * |
EXBK/72 * |
Also Published As
Publication number | Publication date |
---|---|
US4155784A (en) | 1979-05-22 |
JPS53126263A (en) | 1978-11-04 |
NL7803711A (nl) | 1978-10-10 |
GB1601614A (en) | 1981-11-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |