JPS5460871A - Semiconductor construction - Google Patents
Semiconductor constructionInfo
- Publication number
- JPS5460871A JPS5460871A JP12142478A JP12142478A JPS5460871A JP S5460871 A JPS5460871 A JP S5460871A JP 12142478 A JP12142478 A JP 12142478A JP 12142478 A JP12142478 A JP 12142478A JP S5460871 A JPS5460871 A JP S5460871A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor construction
- semiconductor
- construction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010276 construction Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7729744A FR2408221A1 (en) | 1977-10-04 | 1977-10-04 | METAL-GERMANIUM-TYPE STRUCTURE - GALLIUM ARSENIDE AND OSCILLATOR USING SUCH STRUCTURE |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5460871A true JPS5460871A (en) | 1979-05-16 |
Family
ID=9196058
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12142478A Pending JPS5460871A (en) | 1977-10-04 | 1978-10-02 | Semiconductor construction |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5460871A (en) |
DE (1) | DE2843071A1 (en) |
FR (1) | FR2408221A1 (en) |
GB (1) | GB2005472B (en) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3466512A (en) * | 1967-05-29 | 1969-09-09 | Bell Telephone Labor Inc | Impact avalanche transit time diodes with heterojunction structure |
AU7731575A (en) * | 1974-01-18 | 1976-07-15 | Nat Patent Dev Corp | Heterojunction devices |
GB1468578A (en) * | 1974-04-25 | 1977-03-30 | Standard Telephones Cables Ltd | Microwave transistor circuit |
-
1977
- 1977-10-04 FR FR7729744A patent/FR2408221A1/en active Granted
-
1978
- 1978-10-02 JP JP12142478A patent/JPS5460871A/en active Pending
- 1978-10-03 DE DE19782843071 patent/DE2843071A1/en not_active Withdrawn
- 1978-10-03 GB GB7839190A patent/GB2005472B/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2843071A1 (en) | 1979-04-12 |
FR2408221A1 (en) | 1979-06-01 |
FR2408221B1 (en) | 1982-02-19 |
GB2005472A (en) | 1979-04-19 |
GB2005472B (en) | 1982-04-15 |
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