GB2005472A - A structure of the "metal- germanium-gallium arsenide" IMPATT type and an oscillator using such a structure - Google Patents
A structure of the "metal- germanium-gallium arsenide" IMPATT type and an oscillator using such a structureInfo
- Publication number
- GB2005472A GB2005472A GB7839190A GB7839190A GB2005472A GB 2005472 A GB2005472 A GB 2005472A GB 7839190 A GB7839190 A GB 7839190A GB 7839190 A GB7839190 A GB 7839190A GB 2005472 A GB2005472 A GB 2005472A
- Authority
- GB
- United Kingdom
- Prior art keywords
- germanium
- gallium arsenide
- oscillator
- metal
- impatt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 title abstract 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 4
- 229910052732 germanium Inorganic materials 0.000 abstract 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Abstract
In order to improve the efficiency of an IMPATT device, the avalanche zone is limited to the thickness of a thin layer of semiconductor material 2 different from that 3,4 of which the transit zone consists. The structure comprises a metallic layer (1) eg of Au, Al or W, a layer of intrinsic germanium (2) or high resistivity germanium at a low breakdown voltage, epitaxially deposited on to a substrate (3) of monocrystalline gallium arsenide. The gallium arsenide is N-doped to a high level and has a higher breakdown voltage than that of the germanium. Applications are to the generation of very high frequencies. <IMAGE>
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7729744A FR2408221A1 (en) | 1977-10-04 | 1977-10-04 | METAL-GERMANIUM-TYPE STRUCTURE - GALLIUM ARSENIDE AND OSCILLATOR USING SUCH STRUCTURE |
Publications (2)
Publication Number | Publication Date |
---|---|
GB2005472A true GB2005472A (en) | 1979-04-19 |
GB2005472B GB2005472B (en) | 1982-04-15 |
Family
ID=9196058
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB7839190A Expired GB2005472B (en) | 1977-10-04 | 1978-10-03 | Structure of the metal-germanium-gallium arsenide type andan oscillator using a structure |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5460871A (en) |
DE (1) | DE2843071A1 (en) |
FR (1) | FR2408221A1 (en) |
GB (1) | GB2005472B (en) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3466512A (en) * | 1967-05-29 | 1969-09-09 | Bell Telephone Labor Inc | Impact avalanche transit time diodes with heterojunction structure |
AU7731575A (en) * | 1974-01-18 | 1976-07-15 | Nat Patent Dev Corp | Heterojunction devices |
GB1468578A (en) * | 1974-04-25 | 1977-03-30 | Standard Telephones Cables Ltd | Microwave transistor circuit |
-
1977
- 1977-10-04 FR FR7729744A patent/FR2408221A1/en active Granted
-
1978
- 1978-10-02 JP JP12142478A patent/JPS5460871A/en active Pending
- 1978-10-03 GB GB7839190A patent/GB2005472B/en not_active Expired
- 1978-10-03 DE DE19782843071 patent/DE2843071A1/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
FR2408221B1 (en) | 1982-02-19 |
DE2843071A1 (en) | 1979-04-12 |
GB2005472B (en) | 1982-04-15 |
JPS5460871A (en) | 1979-05-16 |
FR2408221A1 (en) | 1979-06-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |