GB2005472A - A structure of the "metal- germanium-gallium arsenide" IMPATT type and an oscillator using such a structure - Google Patents

A structure of the "metal- germanium-gallium arsenide" IMPATT type and an oscillator using such a structure

Info

Publication number
GB2005472A
GB2005472A GB7839190A GB7839190A GB2005472A GB 2005472 A GB2005472 A GB 2005472A GB 7839190 A GB7839190 A GB 7839190A GB 7839190 A GB7839190 A GB 7839190A GB 2005472 A GB2005472 A GB 2005472A
Authority
GB
United Kingdom
Prior art keywords
germanium
gallium arsenide
oscillator
metal
impatt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7839190A
Other versions
GB2005472B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of GB2005472A publication Critical patent/GB2005472A/en
Application granted granted Critical
Publication of GB2005472B publication Critical patent/GB2005472B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

In order to improve the efficiency of an IMPATT device, the avalanche zone is limited to the thickness of a thin layer of semiconductor material 2 different from that 3,4 of which the transit zone consists. The structure comprises a metallic layer (1) eg of Au, Al or W, a layer of intrinsic germanium (2) or high resistivity germanium at a low breakdown voltage, epitaxially deposited on to a substrate (3) of monocrystalline gallium arsenide. The gallium arsenide is N-doped to a high level and has a higher breakdown voltage than that of the germanium. Applications are to the generation of very high frequencies. <IMAGE>
GB7839190A 1977-10-04 1978-10-03 Structure of the metal-germanium-gallium arsenide type andan oscillator using a structure Expired GB2005472B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7729744A FR2408221A1 (en) 1977-10-04 1977-10-04 METAL-GERMANIUM-TYPE STRUCTURE - GALLIUM ARSENIDE AND OSCILLATOR USING SUCH STRUCTURE

Publications (2)

Publication Number Publication Date
GB2005472A true GB2005472A (en) 1979-04-19
GB2005472B GB2005472B (en) 1982-04-15

Family

ID=9196058

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7839190A Expired GB2005472B (en) 1977-10-04 1978-10-03 Structure of the metal-germanium-gallium arsenide type andan oscillator using a structure

Country Status (4)

Country Link
JP (1) JPS5460871A (en)
DE (1) DE2843071A1 (en)
FR (1) FR2408221A1 (en)
GB (1) GB2005472B (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3466512A (en) * 1967-05-29 1969-09-09 Bell Telephone Labor Inc Impact avalanche transit time diodes with heterojunction structure
AU7731575A (en) * 1974-01-18 1976-07-15 Nat Patent Dev Corp Heterojunction devices
GB1468578A (en) * 1974-04-25 1977-03-30 Standard Telephones Cables Ltd Microwave transistor circuit

Also Published As

Publication number Publication date
FR2408221B1 (en) 1982-02-19
FR2408221A1 (en) 1979-06-01
GB2005472B (en) 1982-04-15
JPS5460871A (en) 1979-05-16
DE2843071A1 (en) 1979-04-12

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee