FR2406301A1 - Procede de fabrication de dispositifs semi-conducteurs rapides - Google Patents

Procede de fabrication de dispositifs semi-conducteurs rapides

Info

Publication number
FR2406301A1
FR2406301A1 FR7731205A FR7731205A FR2406301A1 FR 2406301 A1 FR2406301 A1 FR 2406301A1 FR 7731205 A FR7731205 A FR 7731205A FR 7731205 A FR7731205 A FR 7731205A FR 2406301 A1 FR2406301 A1 FR 2406301A1
Authority
FR
France
Prior art keywords
semiconductor
submitting
semiconductors
mfg
rapid response
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7731205A
Other languages
English (en)
Other versions
FR2406301B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SILICIUM SEMICONDUCTEUR SSC
Original Assignee
SILICIUM SEMICONDUCTEUR SSC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SILICIUM SEMICONDUCTEUR SSC filed Critical SILICIUM SEMICONDUCTEUR SSC
Priority to FR7731205A priority Critical patent/FR2406301A1/fr
Publication of FR2406301A1 publication Critical patent/FR2406301A1/fr
Application granted granted Critical
Publication of FR2406301B1 publication Critical patent/FR2406301B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

La présente invention concerne un procédé de fabrication de dispositifs semi-conducteurs rapides. Ce procédé consiste à affectuer successivement un traitement par diffusion à l'or et un traitement par bombardement électronique. Application aux diodes, transistors, thyristors, et triacs.
FR7731205A 1977-10-17 1977-10-17 Procede de fabrication de dispositifs semi-conducteurs rapides Granted FR2406301A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7731205A FR2406301A1 (fr) 1977-10-17 1977-10-17 Procede de fabrication de dispositifs semi-conducteurs rapides

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7731205A FR2406301A1 (fr) 1977-10-17 1977-10-17 Procede de fabrication de dispositifs semi-conducteurs rapides

Publications (2)

Publication Number Publication Date
FR2406301A1 true FR2406301A1 (fr) 1979-05-11
FR2406301B1 FR2406301B1 (fr) 1983-04-15

Family

ID=9196594

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7731205A Granted FR2406301A1 (fr) 1977-10-17 1977-10-17 Procede de fabrication de dispositifs semi-conducteurs rapides

Country Status (1)

Country Link
FR (1) FR2406301A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0071276A2 (fr) * 1981-07-31 1983-02-09 Hitachi, Ltd. Dispositif semiconducteur à grande vitesse de commutation et à concentration graduelle de centres tueurs
CH657478A5 (en) * 1982-08-16 1986-08-29 Bbc Brown Boveri & Cie Power semiconductor component
EP0235550A1 (fr) * 1986-02-05 1987-09-09 BBC Brown Boveri AG Elément semi-conducteur et procédé pour sa fabrication

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1966236A1 (de) * 1968-08-06 1971-12-16 Ibm Verfahren zum Einbringen von Stoerstellen in Halbleiterstrukturen
FR2241141A1 (fr) * 1973-08-16 1975-03-14 Licentia Gmbh
FR2312859A1 (fr) * 1975-05-27 1976-12-24 Westinghouse Electric Corp Thyristor amplificateur a porte integre, avec deconnexion de la porte assistee, et procede de fabrication de ce thyristor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1966236A1 (de) * 1968-08-06 1971-12-16 Ibm Verfahren zum Einbringen von Stoerstellen in Halbleiterstrukturen
FR2241141A1 (fr) * 1973-08-16 1975-03-14 Licentia Gmbh
FR2312859A1 (fr) * 1975-05-27 1976-12-24 Westinghouse Electric Corp Thyristor amplificateur a porte integre, avec deconnexion de la porte assistee, et procede de fabrication de ce thyristor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0071276A2 (fr) * 1981-07-31 1983-02-09 Hitachi, Ltd. Dispositif semiconducteur à grande vitesse de commutation et à concentration graduelle de centres tueurs
EP0071276A3 (en) * 1981-07-31 1985-05-22 Hitachi, Ltd. High switching speed semiconductor device containing graded killer impurity
CH657478A5 (en) * 1982-08-16 1986-08-29 Bbc Brown Boveri & Cie Power semiconductor component
EP0235550A1 (fr) * 1986-02-05 1987-09-09 BBC Brown Boveri AG Elément semi-conducteur et procédé pour sa fabrication
CH668860A5 (de) * 1986-02-05 1989-01-31 Bbc Brown Boveri & Cie Halbleiterbauelement und verfahren zu dessen herstellung.

Also Published As

Publication number Publication date
FR2406301B1 (fr) 1983-04-15

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