FR2406301A1 - Procede de fabrication de dispositifs semi-conducteurs rapides - Google Patents
Procede de fabrication de dispositifs semi-conducteurs rapidesInfo
- Publication number
- FR2406301A1 FR2406301A1 FR7731205A FR7731205A FR2406301A1 FR 2406301 A1 FR2406301 A1 FR 2406301A1 FR 7731205 A FR7731205 A FR 7731205A FR 7731205 A FR7731205 A FR 7731205A FR 2406301 A1 FR2406301 A1 FR 2406301A1
- Authority
- FR
- France
- Prior art keywords
- semiconductor
- submitting
- semiconductors
- mfg
- rapid response
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 title abstract 2
- 239000010931 gold Substances 0.000 title abstract 2
- 229910052737 gold Inorganic materials 0.000 title abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Ceramic Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
La présente invention concerne un procédé de fabrication de dispositifs semi-conducteurs rapides. Ce procédé consiste à affectuer successivement un traitement par diffusion à l'or et un traitement par bombardement électronique. Application aux diodes, transistors, thyristors, et triacs.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7731205A FR2406301A1 (fr) | 1977-10-17 | 1977-10-17 | Procede de fabrication de dispositifs semi-conducteurs rapides |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7731205A FR2406301A1 (fr) | 1977-10-17 | 1977-10-17 | Procede de fabrication de dispositifs semi-conducteurs rapides |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2406301A1 true FR2406301A1 (fr) | 1979-05-11 |
FR2406301B1 FR2406301B1 (fr) | 1983-04-15 |
Family
ID=9196594
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7731205A Granted FR2406301A1 (fr) | 1977-10-17 | 1977-10-17 | Procede de fabrication de dispositifs semi-conducteurs rapides |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2406301A1 (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0071276A2 (fr) * | 1981-07-31 | 1983-02-09 | Hitachi, Ltd. | Dispositif semiconducteur à grande vitesse de commutation et à concentration graduelle de centres tueurs |
CH657478A5 (en) * | 1982-08-16 | 1986-08-29 | Bbc Brown Boveri & Cie | Power semiconductor component |
EP0235550A1 (fr) * | 1986-02-05 | 1987-09-09 | BBC Brown Boveri AG | Elément semi-conducteur et procédé pour sa fabrication |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1966236A1 (de) * | 1968-08-06 | 1971-12-16 | Ibm | Verfahren zum Einbringen von Stoerstellen in Halbleiterstrukturen |
FR2241141A1 (fr) * | 1973-08-16 | 1975-03-14 | Licentia Gmbh | |
FR2312859A1 (fr) * | 1975-05-27 | 1976-12-24 | Westinghouse Electric Corp | Thyristor amplificateur a porte integre, avec deconnexion de la porte assistee, et procede de fabrication de ce thyristor |
-
1977
- 1977-10-17 FR FR7731205A patent/FR2406301A1/fr active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1966236A1 (de) * | 1968-08-06 | 1971-12-16 | Ibm | Verfahren zum Einbringen von Stoerstellen in Halbleiterstrukturen |
FR2241141A1 (fr) * | 1973-08-16 | 1975-03-14 | Licentia Gmbh | |
FR2312859A1 (fr) * | 1975-05-27 | 1976-12-24 | Westinghouse Electric Corp | Thyristor amplificateur a porte integre, avec deconnexion de la porte assistee, et procede de fabrication de ce thyristor |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0071276A2 (fr) * | 1981-07-31 | 1983-02-09 | Hitachi, Ltd. | Dispositif semiconducteur à grande vitesse de commutation et à concentration graduelle de centres tueurs |
EP0071276A3 (en) * | 1981-07-31 | 1985-05-22 | Hitachi, Ltd. | High switching speed semiconductor device containing graded killer impurity |
CH657478A5 (en) * | 1982-08-16 | 1986-08-29 | Bbc Brown Boveri & Cie | Power semiconductor component |
EP0235550A1 (fr) * | 1986-02-05 | 1987-09-09 | BBC Brown Boveri AG | Elément semi-conducteur et procédé pour sa fabrication |
CH668860A5 (de) * | 1986-02-05 | 1989-01-31 | Bbc Brown Boveri & Cie | Halbleiterbauelement und verfahren zu dessen herstellung. |
Also Published As
Publication number | Publication date |
---|---|
FR2406301B1 (fr) | 1983-04-15 |
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