FR2312859A1 - Thyristor amplificateur a porte integre, avec deconnexion de la porte assistee, et procede de fabrication de ce thyristor - Google Patents

Thyristor amplificateur a porte integre, avec deconnexion de la porte assistee, et procede de fabrication de ce thyristor

Info

Publication number
FR2312859A1
FR2312859A1 FR7615287A FR7615287A FR2312859A1 FR 2312859 A1 FR2312859 A1 FR 2312859A1 FR 7615287 A FR7615287 A FR 7615287A FR 7615287 A FR7615287 A FR 7615287A FR 2312859 A1 FR2312859 A1 FR 2312859A1
Authority
FR
France
Prior art keywords
thyristor
door
disconnection
manufacturing
amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7615287A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of FR2312859A1 publication Critical patent/FR2312859A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
FR7615287A 1975-05-27 1976-05-20 Thyristor amplificateur a porte integre, avec deconnexion de la porte assistee, et procede de fabrication de ce thyristor Withdrawn FR2312859A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/581,255 US4238761A (en) 1975-05-27 1975-05-27 Integrated gate assisted turn-off, amplifying gate thyristor with narrow lipped turn-off diode

Publications (1)

Publication Number Publication Date
FR2312859A1 true FR2312859A1 (fr) 1976-12-24

Family

ID=24324472

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7615287A Withdrawn FR2312859A1 (fr) 1975-05-27 1976-05-20 Thyristor amplificateur a porte integre, avec deconnexion de la porte assistee, et procede de fabrication de ce thyristor

Country Status (7)

Country Link
US (1) US4238761A (fr)
JP (1) JPS51145283A (fr)
BE (1) BE842125A (fr)
CA (1) CA1063250A (fr)
DE (1) DE2622193A1 (fr)
FR (1) FR2312859A1 (fr)
GB (1) GB1532097A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2401521A1 (fr) * 1977-08-26 1979-03-23 Gen Electric Procede de modification de caracteristiques electriques de transistors unijonctions
FR2406301A1 (fr) * 1977-10-17 1979-05-11 Silicium Semiconducteur Ssc Procede de fabrication de dispositifs semi-conducteurs rapides

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2805813C3 (de) * 1978-02-11 1984-02-23 Semikron Gesellschaft Fuer Gleichrichterbau U. Elektronik Mbh, 8500 Nuernberg l.PT 23.02.84 Halbleiteranordnung SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg, DE
US4314266A (en) * 1978-07-20 1982-02-02 Electric Power Research Institute, Inc. Thyristor with voltage breakover current control separated from main emitter by current limit region
DE2945335A1 (de) * 1979-11-09 1981-06-04 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor
DE19505387A1 (de) * 1995-02-17 1996-08-22 Abb Management Ag Druckkontaktgehäuse für Halbleiterbauelemente
CN100372126C (zh) * 2005-11-25 2008-02-27 清华大学 高频晶闸管
DE102009051828B4 (de) * 2009-11-04 2014-05-22 Infineon Technologies Ag Halbleiterbauelement mit Rekombinationszone und Graben sowie Verfahren zu dessen Herstellung
CN102456719B (zh) * 2011-12-29 2014-02-26 东南大学 一种可提高pn结反向击穿电压的装置
US20180233321A1 (en) * 2017-02-16 2018-08-16 Lam Research Corporation Ion directionality esc
CN108615785B (zh) * 2018-05-03 2019-09-27 电子科技大学 一种具有深n+空穴电流阻挡层的光控晶闸管

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2088406A1 (fr) * 1970-05-07 1972-01-07 Westinghouse Electric Corp
DE2431022A1 (de) * 1973-06-27 1975-01-16 Mitsubishi Electric Corp Halbleitervorrichtung
DE2447621A1 (de) * 1973-10-09 1975-04-10 Gen Electric Thyristor mit abschaltung ueber steuerelektrode und einem pilot-siliziumgleichrichter

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3442722A (en) * 1964-12-16 1969-05-06 Siemens Ag Method of making a pnpn thyristor
US3487276A (en) * 1966-11-15 1969-12-30 Westinghouse Electric Corp Thyristor having improved operating characteristics at high temperature
US3549961A (en) * 1968-06-19 1970-12-22 Int Rectifier Corp Triac structure and method of manufacture
US3573572A (en) * 1968-09-23 1971-04-06 Int Rectifier Corp Controlled rectifier having high rate-of-rise-of-current capability and low firing gate current
US3579060A (en) * 1969-03-21 1971-05-18 Gen Electric Thyristor with improved current and voltage handling characteristics
BE758745A (fr) * 1969-11-10 1971-05-10 Westinghouse Electric Corp Perfectionnements aux ou en rapport avec les dispositifs semiconducteurs
US3586932A (en) * 1969-12-12 1971-06-22 Gen Electric Five layer gate controlled thyristor with novel turn on characteristics
US3611066A (en) * 1969-12-12 1971-10-05 Gen Electric Thyristor with integrated ballasted gate auxiliary thyristor portion
US3681667A (en) * 1969-12-12 1972-08-01 Gen Electric Controlled rectifier and triac with laterally off-set gate and auxiliary segments for accelerated turn on
DE2211116A1 (de) * 1972-03-08 1973-09-13 Semikron Gleichrichterbau Steuerbares halbleiterbauelement mit vier schichten abwechselnd entgegengesetzten leitfaehigkeitstyps
US3832732A (en) * 1973-01-11 1974-08-27 Westinghouse Electric Corp Light-activated lateral thyristor and ac switch
US3881964A (en) * 1973-03-05 1975-05-06 Westinghouse Electric Corp Annealing to control gate sensitivity of gated semiconductor devices
US3896476A (en) * 1973-05-02 1975-07-22 Mitsubishi Electric Corp Semiconductor switching device
JPS5718347B2 (fr) * 1974-01-07 1982-04-16

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2088406A1 (fr) * 1970-05-07 1972-01-07 Westinghouse Electric Corp
DE2431022A1 (de) * 1973-06-27 1975-01-16 Mitsubishi Electric Corp Halbleitervorrichtung
DE2447621A1 (de) * 1973-10-09 1975-04-10 Gen Electric Thyristor mit abschaltung ueber steuerelektrode und einem pilot-siliziumgleichrichter

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2401521A1 (fr) * 1977-08-26 1979-03-23 Gen Electric Procede de modification de caracteristiques electriques de transistors unijonctions
FR2406301A1 (fr) * 1977-10-17 1979-05-11 Silicium Semiconducteur Ssc Procede de fabrication de dispositifs semi-conducteurs rapides

Also Published As

Publication number Publication date
DE2622193A1 (de) 1976-12-16
CA1063250A (fr) 1979-09-25
JPS5549425B2 (fr) 1980-12-11
JPS51145283A (en) 1976-12-14
BE842125A (fr) 1976-11-22
US4238761A (en) 1980-12-09
GB1532097A (en) 1978-11-15

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Legal Events

Date Code Title Description
ST Notification of lapse