FR2398810A1 - Procede de projection d'une matiere ferromagnetique - Google Patents
Procede de projection d'une matiere ferromagnetiqueInfo
- Publication number
- FR2398810A1 FR2398810A1 FR7821866A FR7821866A FR2398810A1 FR 2398810 A1 FR2398810 A1 FR 2398810A1 FR 7821866 A FR7821866 A FR 7821866A FR 7821866 A FR7821866 A FR 7821866A FR 2398810 A1 FR2398810 A1 FR 2398810A1
- Authority
- FR
- France
- Prior art keywords
- ferromagnetic material
- projecting
- target cathode
- temperature
- ferromagnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
- H01F41/183—Sputtering targets therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
a. Procédé de réalisation d'un film projeté par magnétron ayant des caractéristiques des matières ferromagnétiques. b. Procédé caractérisé en ce qu'on utilise une cathode cible en un matériau ferromagnétique allié à un matériau non ferromagnétique pour abaisser la température de Curie de l'alliage à une valeur inférieure à la température d'utilisation de la cathode cible pendant le procédé.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/818,681 US4094761A (en) | 1977-07-25 | 1977-07-25 | Magnetion sputtering of ferromagnetic material |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2398810A1 true FR2398810A1 (fr) | 1979-02-23 |
FR2398810B1 FR2398810B1 (fr) | 1983-11-04 |
Family
ID=25226149
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7821866A Granted FR2398810A1 (fr) | 1977-07-25 | 1978-07-24 | Procede de projection d'une matiere ferromagnetique |
Country Status (8)
Country | Link |
---|---|
US (2) | US4094761A (fr) |
JP (1) | JPS5929111B2 (fr) |
DE (1) | DE2832620A1 (fr) |
FR (1) | FR2398810A1 (fr) |
GB (1) | GB2001350B (fr) |
HK (1) | HK66284A (fr) |
MY (1) | MY8500489A (fr) |
SG (1) | SG17984G (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2454178A1 (fr) * | 1979-04-09 | 1980-11-07 | Vac Tec Syst | Procede pour ameliorer magnetiquement la pulverisation cathodique de cibles permeables magnetiquement et dispositif de pulverisation cathodique |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5813622B2 (ja) * | 1979-05-04 | 1983-03-15 | 株式会社東芝 | マグネトロン型スパッタ装置 |
US4299678A (en) * | 1979-07-23 | 1981-11-10 | Spin Physics, Inc. | Magnetic target plate for use in magnetron sputtering of magnetic films |
US4324631A (en) * | 1979-07-23 | 1982-04-13 | Spin Physics, Inc. | Magnetron sputtering of magnetic materials |
JPS5775414A (en) * | 1980-10-28 | 1982-05-12 | Fuji Photo Film Co Ltd | Manufacture of magneti substance thin film target for sputtering |
GB2110719B (en) * | 1981-11-30 | 1985-10-30 | Anelva Corp | Sputtering apparatus |
DE3210351A1 (de) * | 1982-03-20 | 1983-09-22 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren und vorrichtung zum herstellen von magnetischen aufzeichnungsschichten |
US4414086A (en) * | 1982-11-05 | 1983-11-08 | Varian Associates, Inc. | Magnetic targets for use in sputter coating apparatus |
US4414087A (en) * | 1983-01-31 | 1983-11-08 | Meckel Benjamin B | Magnetically-assisted sputtering method for producing vertical recording media |
JPS6071667U (ja) * | 1983-10-21 | 1985-05-21 | オリンパス光学工業株式会社 | スパツタリング用タ−ゲツト |
DE3342533A1 (de) * | 1983-11-24 | 1985-06-05 | Siemens AG, 1000 Berlin und 8000 München | Aufstaeubung von permalloy-schichten |
DE3442206A1 (de) * | 1983-12-05 | 1985-07-11 | Leybold-Heraeus GmbH, 5000 Köln | Magnetronkatode zum zerstaeuben ferromagnetischer targets |
US4622122A (en) * | 1986-02-24 | 1986-11-11 | Oerlikon Buhrle U.S.A. Inc. | Planar magnetron cathode target assembly |
GB2194965B (en) * | 1986-09-12 | 1991-01-09 | Sharp Kk | A process for preparing a soft magnetic film of ni-fe based alloy |
JPS63118067A (ja) * | 1986-11-05 | 1988-05-23 | Tokin Corp | スパツタリングタ−ゲツト |
US5458759A (en) * | 1991-08-02 | 1995-10-17 | Anelva Corporation | Magnetron sputtering cathode apparatus |
KR950000906B1 (ko) * | 1991-08-02 | 1995-02-03 | 니찌덴 아넬바 가부시기가이샤 | 스퍼터링장치 |
EP0572151A3 (fr) * | 1992-05-28 | 1995-01-18 | Avx Corp | Varistors avec des connexions vaporisées cathodiquement et méthode pour déposer des connexions vaporisées cathodiquement sur des varistors. |
US5565838A (en) * | 1992-05-28 | 1996-10-15 | Avx Corporation | Varistors with sputtered terminations |
WO1998058098A1 (fr) * | 1997-06-18 | 1998-12-23 | Applied Materials, Inc. | Elements magnetiques et procede permettant de les utiliser |
US6071357A (en) * | 1997-09-26 | 2000-06-06 | Guruswamy; Sivaraman | Magnetostrictive composites and process for manufacture by dynamic compaction |
WO1999025892A1 (fr) | 1997-11-19 | 1999-05-27 | Tosoh Smd, Inc. | PROCEDE DE FABRICATION DE CIBLES DE PULVERISATION Ni-Si AU MAGNETRON ET CIBLES FABRIQUEES PAR CE PROCEDE |
US20030031928A1 (en) * | 1999-05-20 | 2003-02-13 | Saint-Gobain Vitrage | Electrochemical device |
FR2793888B1 (fr) * | 1999-05-20 | 2002-06-28 | Saint Gobain Vitrage | Dispositif electrochimique |
US6113761A (en) | 1999-06-02 | 2000-09-05 | Johnson Matthey Electronics, Inc. | Copper sputtering target assembly and method of making same |
US6858102B1 (en) * | 2000-11-15 | 2005-02-22 | Honeywell International Inc. | Copper-containing sputtering targets, and methods of forming copper-containing sputtering targets |
US6391163B1 (en) | 1999-09-27 | 2002-05-21 | Applied Materials, Inc. | Method of enhancing hardness of sputter deposited copper films |
US6432819B1 (en) | 1999-09-27 | 2002-08-13 | Applied Materials, Inc. | Method and apparatus of forming a sputtered doped seed layer |
EP1232525A2 (fr) | 1999-11-24 | 2002-08-21 | Honeywell International, Inc. | Interconnexion conductrice |
CH695071A5 (fr) * | 2000-07-07 | 2005-11-30 | Tesa Sa | Dispositif de mesure de dimensions comprenant une règle magnétique et procédé de fabrication d'une règle magnétique. |
US6478895B1 (en) * | 2001-04-25 | 2002-11-12 | Praxair S.T. Technology, Inc. | Nickel-titanium sputter target alloy |
KR100416094B1 (ko) * | 2001-08-28 | 2004-01-24 | 삼성에스디아이 주식회사 | 리튬 2차 전지용 음극 박막 및 그 제조 방법 |
WO2004099458A2 (fr) * | 2003-05-02 | 2004-11-18 | Tosoh Smd, Inc. | Procedes de fabrication de cibles de pulverisation en ni-si a faible teneur en silicium et cibles fabriquees par ces procedes |
EP1656467A2 (fr) * | 2003-08-21 | 2006-05-17 | Honeywell International Inc. | Cibles pvd comprenant du cuivre dans des melanges ternaires, et procedes pour former des cibles pvd contenant du cuivre |
US20050061857A1 (en) * | 2003-09-24 | 2005-03-24 | Hunt Thomas J. | Method for bonding a sputter target to a backing plate and the assembly thereof |
WO2005041290A1 (fr) * | 2003-10-24 | 2005-05-06 | Nikko Materials Co., Ltd. | Cible de pulverisation en alliage de nickel et couche mince en alliage de nickel |
US8342383B2 (en) * | 2006-07-06 | 2013-01-01 | Praxair Technology, Inc. | Method for forming sputter target assemblies having a controlled solder thickness |
JP5069051B2 (ja) * | 2007-07-13 | 2012-11-07 | Jx日鉱日石金属株式会社 | ニッケル合金スパッタリングターゲット |
US20090134016A1 (en) * | 2007-11-28 | 2009-05-28 | International Business Machines Corporation | Underbump metallurgy employing sputter-deposited nickel titanium copper alloy |
JP6791313B1 (ja) * | 2019-07-12 | 2020-11-25 | 三菱マテリアル株式会社 | ニッケル合金スパッタリングターゲット |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3609472A (en) * | 1969-05-21 | 1971-09-28 | Trw Semiconductors Inc | High-temperature semiconductor and method of fabrication |
US3625849A (en) * | 1968-10-02 | 1971-12-07 | Ibm | Manufacture of magnetic medium |
US3961946A (en) * | 1974-02-13 | 1976-06-08 | Sony Corporation | Magnetic alloy for use in thermo and magneto printing |
US4060470A (en) * | 1974-12-06 | 1977-11-29 | Clarke Peter J | Sputtering apparatus and method |
-
1977
- 1977-07-25 US US05/818,681 patent/US4094761A/en not_active Expired - Lifetime
-
1978
- 1978-03-09 US US05/884,948 patent/US4159909A/en not_active Expired - Lifetime
- 1978-06-29 JP JP53079235A patent/JPS5929111B2/ja not_active Expired
- 1978-06-29 GB GB787828271A patent/GB2001350B/en not_active Expired
- 1978-07-24 FR FR7821866A patent/FR2398810A1/fr active Granted
- 1978-07-25 DE DE19782832620 patent/DE2832620A1/de active Granted
-
1984
- 1984-02-29 SG SG179/84A patent/SG17984G/en unknown
- 1984-08-23 HK HK662/84A patent/HK66284A/xx not_active IP Right Cessation
-
1985
- 1985-12-30 MY MY489/85A patent/MY8500489A/xx unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3625849A (en) * | 1968-10-02 | 1971-12-07 | Ibm | Manufacture of magnetic medium |
US3609472A (en) * | 1969-05-21 | 1971-09-28 | Trw Semiconductors Inc | High-temperature semiconductor and method of fabrication |
US3961946A (en) * | 1974-02-13 | 1976-06-08 | Sony Corporation | Magnetic alloy for use in thermo and magneto printing |
US4060470A (en) * | 1974-12-06 | 1977-11-29 | Clarke Peter J | Sputtering apparatus and method |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2454178A1 (fr) * | 1979-04-09 | 1980-11-07 | Vac Tec Syst | Procede pour ameliorer magnetiquement la pulverisation cathodique de cibles permeables magnetiquement et dispositif de pulverisation cathodique |
Also Published As
Publication number | Publication date |
---|---|
DE2832620C2 (fr) | 1988-01-21 |
JPS5929111B2 (ja) | 1984-07-18 |
HK66284A (en) | 1984-08-31 |
SG17984G (en) | 1985-03-08 |
DE2832620A1 (de) | 1979-02-15 |
US4094761A (en) | 1978-06-13 |
US4159909A (en) | 1979-07-03 |
GB2001350A (en) | 1979-01-31 |
JPS5424231A (en) | 1979-02-23 |
FR2398810B1 (fr) | 1983-11-04 |
GB2001350B (en) | 1982-03-17 |
MY8500489A (en) | 1985-12-31 |
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