FR2395606A1 - Structure de capacite amelioree a champ eleve utilisant une region de piegeage de porteurs - Google Patents
Structure de capacite amelioree a champ eleve utilisant une region de piegeage de porteursInfo
- Publication number
- FR2395606A1 FR2395606A1 FR7804188A FR7804188A FR2395606A1 FR 2395606 A1 FR2395606 A1 FR 2395606A1 FR 7804188 A FR7804188 A FR 7804188A FR 7804188 A FR7804188 A FR 7804188A FR 2395606 A1 FR2395606 A1 FR 2395606A1
- Authority
- FR
- France
- Prior art keywords
- layer
- charge
- electrodes
- thin film
- high capacity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 title 1
- 239000000463 material Substances 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- 230000015556 catabolic process Effects 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/3115—Doping the insulating layers
- H01L21/31155—Doping the insulating layers by ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7804188A FR2395606A1 (fr) | 1978-02-08 | 1978-02-08 | Structure de capacite amelioree a champ eleve utilisant une region de piegeage de porteurs |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7804188A FR2395606A1 (fr) | 1978-02-08 | 1978-02-08 | Structure de capacite amelioree a champ eleve utilisant une region de piegeage de porteurs |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2395606A1 true FR2395606A1 (fr) | 1979-01-19 |
FR2395606B1 FR2395606B1 (ko) | 1980-03-14 |
Family
ID=9204595
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7804188A Granted FR2395606A1 (fr) | 1978-02-08 | 1978-02-08 | Structure de capacite amelioree a champ eleve utilisant une region de piegeage de porteurs |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2395606A1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0016246A1 (fr) * | 1979-02-15 | 1980-10-01 | International Business Machines Corporation | Structure semi-conductrice à effet de champ du type métal-isolant-métal ou métal-isolant-semi-conducteur et élément de mémoire comportant une telle structure |
EP0308814A2 (en) * | 1987-09-21 | 1989-03-29 | National Semiconductor Corporation | Modification of interfacial fields between dielectrics and semiconductors |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2056947A1 (en) * | 1970-11-20 | 1972-06-29 | Fraunhofer Ges Forschung | Mos surface stabilization - by ion implantation and tempering in hydrogen atmosphere |
US3945031A (en) * | 1973-12-10 | 1976-03-16 | Bell Telephone Laboratories, Incorporated | Charge effects in doped silicon dioxide |
-
1978
- 1978-02-08 FR FR7804188A patent/FR2395606A1/fr active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2056947A1 (en) * | 1970-11-20 | 1972-06-29 | Fraunhofer Ges Forschung | Mos surface stabilization - by ion implantation and tempering in hydrogen atmosphere |
US3945031A (en) * | 1973-12-10 | 1976-03-16 | Bell Telephone Laboratories, Incorporated | Charge effects in doped silicon dioxide |
Non-Patent Citations (1)
Title |
---|
NV1046/75 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0016246A1 (fr) * | 1979-02-15 | 1980-10-01 | International Business Machines Corporation | Structure semi-conductrice à effet de champ du type métal-isolant-métal ou métal-isolant-semi-conducteur et élément de mémoire comportant une telle structure |
EP0308814A2 (en) * | 1987-09-21 | 1989-03-29 | National Semiconductor Corporation | Modification of interfacial fields between dielectrics and semiconductors |
EP0308814A3 (en) * | 1987-09-21 | 1989-04-26 | National Semiconductor Corporation | Modification of interfacial fields between dielectrics amodification of interfacial fields between dielectrics and semiconductors nd semiconductors |
US6117749A (en) * | 1987-09-21 | 2000-09-12 | National Semiconductor Corporation | Modification of interfacial fields between dielectrics and semiconductors |
Also Published As
Publication number | Publication date |
---|---|
FR2395606B1 (ko) | 1980-03-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |