FR2296270A1 - Dispositif a transfert de charges en couche mince - Google Patents

Dispositif a transfert de charges en couche mince

Info

Publication number
FR2296270A1
FR2296270A1 FR7443147A FR7443147A FR2296270A1 FR 2296270 A1 FR2296270 A1 FR 2296270A1 FR 7443147 A FR7443147 A FR 7443147A FR 7443147 A FR7443147 A FR 7443147A FR 2296270 A1 FR2296270 A1 FR 2296270A1
Authority
FR
France
Prior art keywords
electrodes
semiconductor device
polycrystalline silicon
thin layers
coupled semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7443147A
Other languages
English (en)
Other versions
FR2296270B1 (fr
Inventor
Jean-Luc Berger
Daniel Woehrn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7443147A priority Critical patent/FR2296270A1/fr
Publication of FR2296270A1 publication Critical patent/FR2296270A1/fr
Application granted granted Critical
Publication of FR2296270B1 publication Critical patent/FR2296270B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FR7443147A 1974-12-27 1974-12-27 Dispositif a transfert de charges en couche mince Granted FR2296270A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7443147A FR2296270A1 (fr) 1974-12-27 1974-12-27 Dispositif a transfert de charges en couche mince

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7443147A FR2296270A1 (fr) 1974-12-27 1974-12-27 Dispositif a transfert de charges en couche mince

Publications (2)

Publication Number Publication Date
FR2296270A1 true FR2296270A1 (fr) 1976-07-23
FR2296270B1 FR2296270B1 (fr) 1978-12-29

Family

ID=9146708

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7443147A Granted FR2296270A1 (fr) 1974-12-27 1974-12-27 Dispositif a transfert de charges en couche mince

Country Status (1)

Country Link
FR (1) FR2296270A1 (fr)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7304634A (fr) * 1972-04-03 1973-10-05

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7304634A (fr) * 1972-04-03 1973-10-05

Also Published As

Publication number Publication date
FR2296270B1 (fr) 1978-12-29

Similar Documents

Publication Publication Date Title
GB1377129A (en) Charged coupled devices
GB1442464A (en) Charge-coupled devices
JPS5457875A (en) Semiconductor nonvolatile memory device
GB1470192A (fr)
GB1316229A (en) Semiconductor devices
GB1415944A (en) Charge transfer devices
CA974659A (en) Charged coupled devices using a thin insulated semiconductor layer
GB1379141A (en) Charge coupled devices
FR2296270A1 (fr) Dispositif a transfert de charges en couche mince
JPS5776878A (en) Semiconductor memory device
JPS52131478A (en) Semiconductor device
JPS5559759A (en) Semiconductor device
FR2386942A1 (en) CCD charge transfer measurement - relies on potential changes in capacitor connected to floating gate and uses voltage source and switch
JPS5255478A (en) Charge transfer device
GB1300301A (en) Read-only memories
FR2379167A1 (fr) Etage de sortie pour un dispositif a transfert de charges
FR2293062A1 (fr) Composant a transfert de charges
JPS5341191A (en) Electric charge transfer device
JPS5360584A (en) Production of semiconductor device
JPS5784148A (en) Semiconductor device
GB1468680A (en) Semiconductor device
JPS52130580A (en) High densityintegrated circuit device
FR2259437A1 (en) Composite conducting layer charge coupled device - provides asymmetric potential well using alternate oppositely doped regions
JPS5778181A (en) Semiconductor variable capacity element
JPS5638865A (en) Manufacture of charge transfer device

Legal Events

Date Code Title Description
ST Notification of lapse