FR2391563A1 - Composant semi-conducteur integre - Google Patents

Composant semi-conducteur integre

Info

Publication number
FR2391563A1
FR2391563A1 FR7814455A FR7814455A FR2391563A1 FR 2391563 A1 FR2391563 A1 FR 2391563A1 FR 7814455 A FR7814455 A FR 7814455A FR 7814455 A FR7814455 A FR 7814455A FR 2391563 A1 FR2391563 A1 FR 2391563A1
Authority
FR
France
Prior art keywords
transistor
integrated semiconductor
semiconductor component
serving
logic circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7814455A
Other languages
English (en)
French (fr)
Other versions
FR2391563B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zaidan Hojin Handotai Kenkyu Shinkokai
Original Assignee
Zaidan Hojin Handotai Kenkyu Shinkokai
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP52055778A external-priority patent/JPS5918870B2/ja
Priority claimed from JP6264877A external-priority patent/JPS53147483A/ja
Application filed by Zaidan Hojin Handotai Kenkyu Shinkokai filed Critical Zaidan Hojin Handotai Kenkyu Shinkokai
Publication of FR2391563A1 publication Critical patent/FR2391563A1/fr
Application granted granted Critical
Publication of FR2391563B1 publication Critical patent/FR2391563B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091—Integrated injection logic or merged transistor logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/409—Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/87—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of PN-junction gate FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/217—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge injection in static induction transistor logic [SITL] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Logic Circuits (AREA)
FR7814455A 1977-05-15 1978-05-16 Composant semi-conducteur integre Granted FR2391563A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP52055778A JPS5918870B2 (ja) 1977-05-15 1977-05-15 半導体集積回路
JP6264877A JPS53147483A (en) 1977-05-28 1977-05-28 Semiconductor ic

Publications (2)

Publication Number Publication Date
FR2391563A1 true FR2391563A1 (fr) 1978-12-15
FR2391563B1 FR2391563B1 (enExample) 1984-04-06

Family

ID=26396678

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7814455A Granted FR2391563A1 (fr) 1977-05-15 1978-05-16 Composant semi-conducteur integre

Country Status (4)

Country Link
DE (1) DE2820913A1 (enExample)
FR (1) FR2391563A1 (enExample)
GB (1) GB1602984A (enExample)
NL (1) NL188061C (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2397070A1 (fr) * 1977-07-07 1979-02-02 Zaidan Hojin Handotai Kenkyu Transistor a induction, statique et montage comportant de tels transistors

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3205950A1 (de) * 1981-10-22 1983-05-05 Robert Bosch Gmbh, 7000 Stuttgart Bipolar integrierte inverstransistorlogik
JP4777630B2 (ja) 2004-09-21 2011-09-21 株式会社日立製作所 半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2379913A1 (fr) * 1977-02-02 1978-09-01 Zaidan Hojin Handotai Kenkyu Semi-conducteur a caracteristique i-v non sature et circuit integre comportant un tel semi-conducteur
FR2381373A1 (fr) * 1977-02-21 1978-09-15 Zaidan Hojin Handotai Kenkyu Memoire semi-conductrice rapide, a grande densite

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7414273A (nl) * 1974-11-01 1976-05-04 Philips Nv Logische schakeling.

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2379913A1 (fr) * 1977-02-02 1978-09-01 Zaidan Hojin Handotai Kenkyu Semi-conducteur a caracteristique i-v non sature et circuit integre comportant un tel semi-conducteur
FR2381373A1 (fr) * 1977-02-21 1978-09-15 Zaidan Hojin Handotai Kenkyu Memoire semi-conductrice rapide, a grande densite

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/75 *
EXBK/77 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2397070A1 (fr) * 1977-07-07 1979-02-02 Zaidan Hojin Handotai Kenkyu Transistor a induction, statique et montage comportant de tels transistors

Also Published As

Publication number Publication date
NL188061B (nl) 1991-10-16
GB1602984A (en) 1981-11-18
DE2820913C2 (enExample) 1987-10-15
NL188061C (nl) 1992-03-16
NL7805149A (nl) 1978-11-17
FR2391563B1 (enExample) 1984-04-06
DE2820913A1 (de) 1978-11-23

Similar Documents

Publication Publication Date Title
GB1475908A (en) Mos circuit
KR880001110A (ko) 저잡음 고출력 버퍼회로
KR840005629A (ko) 전계효과 트랜지스터와 바이폴라트랜지스터를 조합한 게이트회로
JPS5694654A (en) Generating circuit for substrate bias voltage
KR960012000A (ko) 부트스트랩회로
KR920007180A (ko) 바이폴라 트랜지스터와 mos 트랜지스터의 복합회로 및 그것을 사용한 반도체 집적회로장치
FR2356273A1 (fr) Dispositif de protection d'entree pour semi-conducteurs mos
FR2392499A1 (fr) Dispositif semi-conducteur en logique integree a injection
KR910005448A (ko) 반도체 집적회로
JPS5226181A (en) Semi-conductor integrated circuit unit
GB1483169A (en) Inverters
KR910019340A (ko) 반도체 집적회로
JPS5612128A (en) Cmos buffer circuit
JPS53125753A (en) Driving circuit
GB1414263A (en) Bipolar and insulated gate field effect transistor circuits
KR920003704A (ko) 디지탈 신호에 응답하는 부동회로 구동용 회로
KR970024562A (ko) 고속 cmos 전하 펌프의 전류부정합 보상 회로
JPH0628012B2 (ja) 定電圧発生回路
FR2310660A2 (fr) Circuit integre de la technique mos pour un generateur d'impulsions de commande
JPS5690624A (en) Decoder circuit
JPS57154869A (en) Semiconductor device
FR2397755A1 (fr) Perfectionnements aux circuits logiques integres a injection
FR2418982A1 (fr) Circuit de sortie en logique a injection integree
FR2407777A1 (fr) Ensemble d'elements fonctionnels d'une broche de service destinee notamment a des perceuses a coordonnees
SU788438A1 (ru) Амплитудный селектор