FR2386194A1 - Circuit de commutation a transistors - Google Patents

Circuit de commutation a transistors

Info

Publication number
FR2386194A1
FR2386194A1 FR7809369A FR7809369A FR2386194A1 FR 2386194 A1 FR2386194 A1 FR 2386194A1 FR 7809369 A FR7809369 A FR 7809369A FR 7809369 A FR7809369 A FR 7809369A FR 2386194 A1 FR2386194 A1 FR 2386194A1
Authority
FR
France
Prior art keywords
switching circuit
transistor
transistor switching
conduct
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR7809369A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2386194A1 publication Critical patent/FR2386194A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents
    • H03K17/732—Measures for enabling turn-off
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents

Landscapes

  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
  • Thyristor Switches And Gates (AREA)

Abstract

L'invention concerne les circuits de commutation à transistors. Un circuit de commutation 21 comprend deux transistors 25 et 31 en montage Darlington, mais avec une résistance 35 branchée entre la borne d'entrée 33 et la base du transistor de sortie 31. Cette configuration permet au transistor 31 de conduire un courant faible avec une chute de tension collecteur-émetteur de l'ordre de 0,2 V. Application à la commande des thyristors à blocage par la gâchette.
FR7809369A 1977-03-31 1978-03-30 Circuit de commutation a transistors Pending FR2386194A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/783,221 US4117351A (en) 1977-03-31 1977-03-31 Transistor switching circuit

Publications (1)

Publication Number Publication Date
FR2386194A1 true FR2386194A1 (fr) 1978-10-27

Family

ID=25128548

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7809369A Pending FR2386194A1 (fr) 1977-03-31 1978-03-30 Circuit de commutation a transistors

Country Status (7)

Country Link
US (1) US4117351A (fr)
JP (1) JPS53123061A (fr)
DE (1) DE2814021C3 (fr)
FR (1) FR2386194A1 (fr)
GB (1) GB1599262A (fr)
IT (1) IT1093980B (fr)
SE (1) SE7803444L (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2825794C2 (de) * 1978-06-13 1986-03-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Abschaltbarer Thyristor
JPS607467B2 (ja) * 1978-06-30 1985-02-25 松下電器産業株式会社 周波数変換装置
US4213066A (en) * 1978-08-11 1980-07-15 General Motors Corporation Solid state switch
US4516037A (en) * 1978-12-20 1985-05-07 At&T Bell Laboratories Control circuitry for high voltage solid-state switches
US4656366A (en) * 1979-12-28 1987-04-07 American Telephone And Telegraph Company At&T Bell Laboratories Control circuitry using two branch circuits for high voltage solid-state switches
US4349751A (en) * 1980-02-11 1982-09-14 Bell Telephone Laboratories, Incorporated Control circuitry using a pull-down transistor for high voltage solid-state switches
US4390812A (en) * 1981-06-25 1983-06-28 Seidler Robert L Regulator and switching circuit for flasher units
JPS587924A (ja) * 1981-07-08 1983-01-17 Nippon Telegr & Teleph Corp <Ntt> 半導体スイツチ回路
JPS58175970A (ja) * 1982-04-08 1983-10-15 Fuji Electric Co Ltd スイッチング半導体素子への逆バイアス電流供給装置
JPS60501134A (ja) * 1983-04-08 1985-07-18 ザイドラ−　ロバ−ト　エル 点滅装置用の調整器及びスイッチング回路
JPS60208119A (ja) * 1984-03-30 1985-10-19 Hitachi Ltd 容量性負荷の駆動回路
JPS60217730A (ja) * 1984-04-13 1985-10-31 Hitachi Ltd 半導体装置
JPS6161522A (ja) * 1984-08-31 1986-03-29 Nec Corp 半導体スイツチ
JPS6393218A (ja) * 1986-10-08 1988-04-23 Hitachi Ltd ゲ−トタ−ンオフサイリスタのタ−ンオフ回路

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH521689A (de) * 1969-10-10 1972-04-15 Ifm Gmbh & Co Kg Elektronisches, berührungslos arbeitendes Schaltgerät
US3737736A (en) * 1971-04-23 1973-06-05 Lucifer Sa Electromagnet-controlling system
DE2360116A1 (de) * 1973-12-03 1975-06-12 Siemens Ag Schaltungsanordnung zur zuendung eines steuerbaren halbleiterventils, insbesondere eines thyristors

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3210617A (en) * 1961-01-11 1965-10-05 Westinghouse Electric Corp High gain transistor comprising direct connection between base and emitter electrodes

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH521689A (de) * 1969-10-10 1972-04-15 Ifm Gmbh & Co Kg Elektronisches, berührungslos arbeitendes Schaltgerät
US3737736A (en) * 1971-04-23 1973-06-05 Lucifer Sa Electromagnet-controlling system
DE2360116A1 (de) * 1973-12-03 1975-06-12 Siemens Ag Schaltungsanordnung zur zuendung eines steuerbaren halbleiterventils, insbesondere eines thyristors

Also Published As

Publication number Publication date
DE2814021C3 (de) 1980-04-10
IT7821739A0 (it) 1978-03-29
GB1599262A (en) 1981-09-30
DE2814021B2 (de) 1979-08-02
US4117351A (en) 1978-09-26
DE2814021A1 (de) 1978-10-12
IT1093980B (it) 1985-07-26
SE7803444L (sv) 1978-10-01
JPS53123061A (en) 1978-10-27

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