IT1093980B - Circuito di commutazione a transistori - Google Patents

Circuito di commutazione a transistori

Info

Publication number
IT1093980B
IT1093980B IT21739/78A IT2173978A IT1093980B IT 1093980 B IT1093980 B IT 1093980B IT 21739/78 A IT21739/78 A IT 21739/78A IT 2173978 A IT2173978 A IT 2173978A IT 1093980 B IT1093980 B IT 1093980B
Authority
IT
Italy
Prior art keywords
switching circuit
transistor switching
transistor
circuit
switching
Prior art date
Application number
IT21739/78A
Other languages
English (en)
Other versions
IT7821739A0 (it
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IT7821739A0 publication Critical patent/IT7821739A0/it
Application granted granted Critical
Publication of IT1093980B publication Critical patent/IT1093980B/it

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for DC voltages or currents
    • H03K17/732—Measures for enabling turn-off
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for DC voltages or currents
IT21739/78A 1977-03-31 1978-03-29 Circuito di commutazione a transistori IT1093980B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/783,221 US4117351A (en) 1977-03-31 1977-03-31 Transistor switching circuit

Publications (2)

Publication Number Publication Date
IT7821739A0 IT7821739A0 (it) 1978-03-29
IT1093980B true IT1093980B (it) 1985-07-26

Family

ID=25128548

Family Applications (1)

Application Number Title Priority Date Filing Date
IT21739/78A IT1093980B (it) 1977-03-31 1978-03-29 Circuito di commutazione a transistori

Country Status (7)

Country Link
US (1) US4117351A (it)
JP (1) JPS53123061A (it)
DE (1) DE2814021C3 (it)
FR (1) FR2386194A1 (it)
GB (1) GB1599262A (it)
IT (1) IT1093980B (it)
SE (1) SE7803444L (it)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2825794C2 (de) * 1978-06-13 1986-03-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Abschaltbarer Thyristor
JPS607467B2 (ja) * 1978-06-30 1985-02-25 松下電器産業株式会社 周波数変換装置
US4213066A (en) * 1978-08-11 1980-07-15 General Motors Corporation Solid state switch
US4516037A (en) * 1978-12-20 1985-05-07 At&T Bell Laboratories Control circuitry for high voltage solid-state switches
US4656366A (en) * 1979-12-28 1987-04-07 American Telephone And Telegraph Company At&T Bell Laboratories Control circuitry using two branch circuits for high voltage solid-state switches
US4349751A (en) * 1980-02-11 1982-09-14 Bell Telephone Laboratories, Incorporated Control circuitry using a pull-down transistor for high voltage solid-state switches
US4390812A (en) * 1981-06-25 1983-06-28 Seidler Robert L Regulator and switching circuit for flasher units
JPS587924A (ja) * 1981-07-08 1983-01-17 Nippon Telegr & Teleph Corp <Ntt> 半導体スイツチ回路
JPS58175970A (ja) * 1982-04-08 1983-10-15 Fuji Electric Co Ltd スイッチング半導体素子への逆バイアス電流供給装置
EP0147386A4 (en) * 1983-04-08 1985-07-30 Robert L Seidler SWITCHING CIRCUIT AND REGULATOR FOR TURN SIGNALS.
JPS60208119A (ja) * 1984-03-30 1985-10-19 Hitachi Ltd 容量性負荷の駆動回路
JPS60217730A (ja) * 1984-04-13 1985-10-31 Hitachi Ltd 半導体装置
JPS6161522A (ja) * 1984-08-31 1986-03-29 Nec Corp 半導体スイツチ
JPS6393218A (ja) * 1986-10-08 1988-04-23 Hitachi Ltd ゲ−トタ−ンオフサイリスタのタ−ンオフ回路

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3210617A (en) * 1961-01-11 1965-10-05 Westinghouse Electric Corp High gain transistor comprising direct connection between base and emitter electrodes
DE1951137B2 (de) * 1969-10-10 1973-03-01 lfm electronic gerate GmbH & Co KG, 4300 Essen Elektronisches, beruehrungslos arbeitendes schaltgeraet
CH523583A (fr) * 1971-04-23 1972-05-31 Lucifer Sa Dispositif de commande d'un électro-aimant
DE2360116B2 (de) * 1973-12-03 1975-10-02 Siemens Ag, 1000 Berlin Und 8000 Muenchen Schaltungsanordnung zur Zündung eines steuerbaren Halbleiterventls, insbesondere eines Thyristors

Also Published As

Publication number Publication date
DE2814021B2 (de) 1979-08-02
JPS53123061A (en) 1978-10-27
FR2386194A1 (fr) 1978-10-27
DE2814021A1 (de) 1978-10-12
GB1599262A (en) 1981-09-30
SE7803444L (sv) 1978-10-01
IT7821739A0 (it) 1978-03-29
US4117351A (en) 1978-09-26
DE2814021C3 (de) 1980-04-10

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