FR2385225A1 - Procede de realisation d'un contact ohmique sur un semi-conducteur compose contenant de l'aluminium - Google Patents

Procede de realisation d'un contact ohmique sur un semi-conducteur compose contenant de l'aluminium

Info

Publication number
FR2385225A1
FR2385225A1 FR7807974A FR7807974A FR2385225A1 FR 2385225 A1 FR2385225 A1 FR 2385225A1 FR 7807974 A FR7807974 A FR 7807974A FR 7807974 A FR7807974 A FR 7807974A FR 2385225 A1 FR2385225 A1 FR 2385225A1
Authority
FR
France
Prior art keywords
ohmic contact
containing aluminum
making
compound semiconductor
semiconductor containing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR7807974A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2385225A1 publication Critical patent/FR2385225A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/02—Contacts, special

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)

Abstract

L'invention concerne la fabrication des dispositifs à semi-conducteurs. Pour réaliser un contact ohmique sur un corps semi-conducteur 31 contenant de l'aluminium, on dépose tout d'abord sur ce dernier une couche de transition 32 qui contient de l'aluminium et un élément de dopage à faible énergie d'activation, puis on dépose une couche d'or 34 sur la couche de transition. On chauffe ensuite l'ensemble à une température supérieure à la température de fusion de la couche de transition, mais inférieure à la température de fusion de la couche d'or. Application à la fabrication de diodes électroluminescentes.
FR7807974A 1977-03-24 1978-03-20 Procede de realisation d'un contact ohmique sur un semi-conducteur compose contenant de l'aluminium Pending FR2385225A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/780,977 US4081824A (en) 1977-03-24 1977-03-24 Ohmic contact to aluminum-containing compound semiconductors

Publications (1)

Publication Number Publication Date
FR2385225A1 true FR2385225A1 (fr) 1978-10-20

Family

ID=25121269

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7807974A Pending FR2385225A1 (fr) 1977-03-24 1978-03-20 Procede de realisation d'un contact ohmique sur un semi-conducteur compose contenant de l'aluminium

Country Status (9)

Country Link
US (1) US4081824A (fr)
JP (1) JPS53124969A (fr)
BE (1) BE865185A (fr)
DE (1) DE2811946A1 (fr)
ES (1) ES468137A1 (fr)
FR (1) FR2385225A1 (fr)
IT (1) IT7867653A0 (fr)
NL (1) NL7803008A (fr)
SE (1) SE7802911L (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4179534A (en) * 1978-05-24 1979-12-18 Bell Telephone Laboratories, Incorporated Gold-tin-gold ohmic contact to N-type group III-V semiconductors
DE3830047C1 (fr) * 1988-09-03 1990-04-26 Maschinenfabrik Korfmann Gmbh, 5810 Witten, De
DE102008054415A1 (de) * 2008-12-09 2010-06-10 Robert Bosch Gmbh Anordnung zweier Substrate mit einer SLID-Bondverbindung und Verfahren zur Herstellung einer solchen Anordnung

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2086504A1 (fr) * 1970-04-30 1971-12-31 Duraev Vladimir
FR2088335A1 (fr) * 1970-05-05 1972-01-07 Rca Corp
FR2230078A1 (fr) * 1973-05-18 1974-12-13 Radiotechnique Compelec
FR2253279A1 (fr) * 1973-12-03 1975-06-27 Western Electric Co

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3406050A (en) * 1965-08-04 1968-10-15 Texas Instruments Inc Method of making electrical contact to a semiconductor body
US3942244A (en) * 1967-11-24 1976-03-09 Semikron Gesellschaft Fur Gleichrichterbau Und Elektronik M.B.H. Semiconductor element
US3620837A (en) * 1968-09-16 1971-11-16 Ibm Reliability of aluminum and aluminum alloy lands
NL7013227A (fr) * 1970-09-08 1972-03-10 Philips Nv
US3863334A (en) * 1971-03-08 1975-02-04 Motorola Inc Aluminum-zinc metallization
US3942243A (en) * 1974-01-25 1976-03-09 Litronix, Inc. Ohmic contact for semiconductor devices

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2086504A1 (fr) * 1970-04-30 1971-12-31 Duraev Vladimir
FR2088335A1 (fr) * 1970-05-05 1972-01-07 Rca Corp
FR2230078A1 (fr) * 1973-05-18 1974-12-13 Radiotechnique Compelec
FR2253279A1 (fr) * 1973-12-03 1975-06-27 Western Electric Co

Also Published As

Publication number Publication date
SE7802911L (sv) 1978-09-25
NL7803008A (nl) 1978-09-26
US4081824A (en) 1978-03-28
ES468137A1 (es) 1979-01-16
BE865185A (fr) 1978-07-17
DE2811946A1 (de) 1978-10-05
IT7867653A0 (it) 1978-03-23
JPS53124969A (en) 1978-10-31

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