FR2383524A1 - Photoelectric semiconductor current generator with rectifier layer - has radiation receiving coating forming focussing element and rectifier layer at specified distance - Google Patents

Photoelectric semiconductor current generator with rectifier layer - has radiation receiving coating forming focussing element and rectifier layer at specified distance

Info

Publication number
FR2383524A1
FR2383524A1 FR7706793A FR7706793A FR2383524A1 FR 2383524 A1 FR2383524 A1 FR 2383524A1 FR 7706793 A FR7706793 A FR 7706793A FR 7706793 A FR7706793 A FR 7706793A FR 2383524 A1 FR2383524 A1 FR 2383524A1
Authority
FR
France
Prior art keywords
layer
rectifier layer
current generator
focussing element
semiconductor current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7706793A
Other languages
French (fr)
Other versions
FR2383524B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DORMIDONTOV ANATOLY
Original Assignee
DORMIDONTOV ANATOLY
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by DORMIDONTOV ANATOLY filed Critical DORMIDONTOV ANATOLY
Priority to FR7706793A priority Critical patent/FR2383524A1/en
Publication of FR2383524A1 publication Critical patent/FR2383524A1/en
Application granted granted Critical
Publication of FR2383524B1 publication Critical patent/FR2383524B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Abstract

The semiconductor current generator such as solar battery, has at least one photoelectric transducer (1) with at least one rectifying layer. The base region (6) whose conductivity is determined by its majority charge carriers is separated by this layer from an inversion region whose conductivity is determined by the minority charge carriers of the base region. Both the base and inversion regions are contacted. The radiation is received by the generator coating (2) which forms an optical focussing element, which directs the solar radiation onto the generator working surface, effective for the photoelectric transducer. The absorption zone in the focal point (13) is located in the base region, while being spaced from the rectifying layer by a distance smaller than the diffusion length of the minority charge carriers.
FR7706793A 1977-03-08 1977-03-08 Photoelectric semiconductor current generator with rectifier layer - has radiation receiving coating forming focussing element and rectifier layer at specified distance Granted FR2383524A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7706793A FR2383524A1 (en) 1977-03-08 1977-03-08 Photoelectric semiconductor current generator with rectifier layer - has radiation receiving coating forming focussing element and rectifier layer at specified distance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7706793A FR2383524A1 (en) 1977-03-08 1977-03-08 Photoelectric semiconductor current generator with rectifier layer - has radiation receiving coating forming focussing element and rectifier layer at specified distance

Publications (2)

Publication Number Publication Date
FR2383524A1 true FR2383524A1 (en) 1978-10-06
FR2383524B1 FR2383524B1 (en) 1979-07-13

Family

ID=9187748

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7706793A Granted FR2383524A1 (en) 1977-03-08 1977-03-08 Photoelectric semiconductor current generator with rectifier layer - has radiation receiving coating forming focussing element and rectifier layer at specified distance

Country Status (1)

Country Link
FR (1) FR2383524A1 (en)

Also Published As

Publication number Publication date
FR2383524B1 (en) 1979-07-13

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Legal Events

Date Code Title Description
ST Notification of lapse