FR2380635A1 - Procede pour deposer par pulverisation une couche additionnelle sur une ou plusieurs couches situees a la surface d'un substrat, notamment pour composants a semi-conducteurs - Google Patents
Procede pour deposer par pulverisation une couche additionnelle sur une ou plusieurs couches situees a la surface d'un substrat, notamment pour composants a semi-conducteursInfo
- Publication number
- FR2380635A1 FR2380635A1 FR7802925A FR7802925A FR2380635A1 FR 2380635 A1 FR2380635 A1 FR 2380635A1 FR 7802925 A FR7802925 A FR 7802925A FR 7802925 A FR7802925 A FR 7802925A FR 2380635 A1 FR2380635 A1 FR 2380635A1
- Authority
- FR
- France
- Prior art keywords
- substrate
- additional layer
- semiconductor components
- spraying
- layers located
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000005507 spraying Methods 0.000 title abstract 2
- 230000008569 process Effects 0.000 title 1
- 238000004544 sputter deposition Methods 0.000 abstract 3
- 238000000151 deposition Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31608—Deposition of SiO2
- H01L21/31612—Deposition of SiO2 on a silicon body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32131—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only
- H01L21/32132—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only of silicon-containing layers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Optics & Photonics (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Abstract
L'invention concerne un procédé pour déposer par pulvérisation une couche additionnelle sur une ou plusieurs couches situées à la surface d'un substrat, notamment pour composants à semi-conducteurs. Selon ce procédé sur un ensemble formé de couches 2, 3, 4 disposées sur un substrat 1 et ayant subi une attaque chimique et laissant une structure 14 en surplomb et des parties corrodées sousjacentes 20, on dépose une couche supplémentaire 12 par pulvérisation et pour remplir ou donner une forme en biseau aux parties corrodées sousjacentes lors de la pulvérisation, on applique au substrat 1 une tension de polarisation comprise entre 1/10 et 1/3 de la tension de cible de la source de pulvérisation. Application notamment à la fabrication de composants à semi-conducteurs.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19772705611 DE2705611A1 (de) | 1977-02-10 | 1977-02-10 | Verfahren zum bedecken einer auf einem substrat befindlichen ersten schicht oder schichtenfolge mit einer weiteren zweiten schicht durch aufsputtern |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2380635A1 true FR2380635A1 (fr) | 1978-09-08 |
Family
ID=6000842
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7802925A Pending FR2380635A1 (fr) | 1977-02-10 | 1978-02-02 | Procede pour deposer par pulverisation une couche additionnelle sur une ou plusieurs couches situees a la surface d'un substrat, notamment pour composants a semi-conducteurs |
Country Status (8)
Country | Link |
---|---|
US (1) | US4162210A (fr) |
JP (1) | JPS5399773A (fr) |
BE (1) | BE863867A (fr) |
CA (1) | CA1094228A (fr) |
DE (1) | DE2705611A1 (fr) |
FR (1) | FR2380635A1 (fr) |
GB (1) | GB1546057A (fr) |
IT (1) | IT1092393B (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0076942A2 (fr) * | 1981-10-14 | 1983-04-20 | Kabushiki Kaisha Toshiba | Procédé pour la fabrication de dispositifs à circuit intégré comportant des régions d'isolation diélectrique |
EP0326531A2 (fr) * | 1988-01-29 | 1989-08-02 | International Business Machines Corporation | Appareillage de traitement par plasma RF |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4191603A (en) * | 1978-05-01 | 1980-03-04 | International Business Machines Corporation | Making semiconductor structure with improved phosphosilicate glass isolation |
US4268584A (en) * | 1979-12-17 | 1981-05-19 | International Business Machines Corporation | Nickel-X/gold/nickel-X conductors for solid state devices where X is phosphorus, boron, or carbon |
US4353777A (en) * | 1981-04-20 | 1982-10-12 | Lfe Corporation | Selective plasma polysilicon etching |
DE3903699A1 (de) * | 1988-02-08 | 1989-08-17 | Ricoh Kk | Bildsensor |
DE4004844C1 (de) * | 1990-02-16 | 1991-01-03 | Abb Ixys Semiconductor Gmbh | Verfahren zur Herstellung einer strukturierten Kupfermetallisierung auf einem Keramiksubstrat |
DE4010672A1 (de) * | 1990-04-03 | 1991-10-10 | Leybold Ag | Verfahren und vorrichtung zur behandlung von werkstuecken durch reaktives ionenaetzen |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3661761A (en) * | 1969-06-02 | 1972-05-09 | Ibm | Rf sputtering apparatus for promoting resputtering of film during deposition |
US3677924A (en) * | 1967-06-05 | 1972-07-18 | Texas Instruments Inc | Rf sputtering method |
US3804738A (en) * | 1973-06-29 | 1974-04-16 | Ibm | Partial planarization of electrically insulative films by resputtering |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4036723A (en) * | 1975-08-21 | 1977-07-19 | International Business Machines Corporation | RF bias sputtering method for producing insulating films free of surface irregularities |
-
1977
- 1977-02-10 DE DE19772705611 patent/DE2705611A1/de not_active Ceased
-
1978
- 1978-01-26 GB GB3122/78A patent/GB1546057A/en not_active Expired
- 1978-01-26 US US05/872,433 patent/US4162210A/en not_active Expired - Lifetime
- 1978-02-02 FR FR7802925A patent/FR2380635A1/fr active Pending
- 1978-02-03 IT IT7819978A patent/IT1092393B/it active
- 1978-02-08 JP JP1336278A patent/JPS5399773A/ja active Pending
- 1978-02-09 CA CA296,570A patent/CA1094228A/fr not_active Expired
- 1978-02-10 BE BE185084A patent/BE863867A/fr unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3677924A (en) * | 1967-06-05 | 1972-07-18 | Texas Instruments Inc | Rf sputtering method |
US3661761A (en) * | 1969-06-02 | 1972-05-09 | Ibm | Rf sputtering apparatus for promoting resputtering of film during deposition |
US3804738A (en) * | 1973-06-29 | 1974-04-16 | Ibm | Partial planarization of electrically insulative films by resputtering |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0076942A2 (fr) * | 1981-10-14 | 1983-04-20 | Kabushiki Kaisha Toshiba | Procédé pour la fabrication de dispositifs à circuit intégré comportant des régions d'isolation diélectrique |
EP0076942A3 (en) * | 1981-10-14 | 1986-04-16 | Kabushiki Kaisha Toshiba | Method of making integrated circuit device comprising dielectric isolation regions |
EP0326531A2 (fr) * | 1988-01-29 | 1989-08-02 | International Business Machines Corporation | Appareillage de traitement par plasma RF |
EP0326531A3 (en) * | 1988-01-29 | 1990-08-22 | International Business Machines Corporation | Improved rf plasma processing apparatus |
Also Published As
Publication number | Publication date |
---|---|
DE2705611A1 (de) | 1978-08-17 |
IT1092393B (it) | 1985-07-12 |
IT7819978A0 (it) | 1978-02-03 |
GB1546057A (en) | 1979-05-16 |
JPS5399773A (en) | 1978-08-31 |
US4162210A (en) | 1979-07-24 |
BE863867A (fr) | 1978-05-29 |
CA1094228A (fr) | 1981-01-20 |
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