FR2378873A1 - Emitter layer application in semiconductor prodn. - involves application of emitter from supply of an intermediate element, from which it is transferred to emitter support - Google Patents

Emitter layer application in semiconductor prodn. - involves application of emitter from supply of an intermediate element, from which it is transferred to emitter support

Info

Publication number
FR2378873A1
FR2378873A1 FR7702723A FR7702723A FR2378873A1 FR 2378873 A1 FR2378873 A1 FR 2378873A1 FR 7702723 A FR7702723 A FR 7702723A FR 7702723 A FR7702723 A FR 7702723A FR 2378873 A1 FR2378873 A1 FR 2378873A1
Authority
FR
France
Prior art keywords
emitter
application
intermediate element
prodn
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7702723A
Other languages
French (fr)
Other versions
FR2378873B1 (en
Inventor
Ellin Petrovich Bochkarev
Nikolai Georgievich Voronin
Oleg Evgenievich Korobov
Vadim Nikolaevich Maslov
Irina Borisovna Nikitina
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
G PI
Original Assignee
G PI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by G PI filed Critical G PI
Priority to FR7702723A priority Critical patent/FR2378873A1/en
Publication of FR2378873A1 publication Critical patent/FR2378873A1/en
Application granted granted Critical
Publication of FR2378873B1 publication Critical patent/FR2378873B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/22—Sandwich processes

Abstract

A layer of emitting material is applied to a retaining substrate in a process, in which the material of the emitting source is converted into a gas and then deposited onto the substrate. The emitting material from >=1 source is applied to an intermediate element from which it is deposited onto the emitter retaining substrate. Pref. the transfer to and from the intermediate element is carried out by sublimation. This transfer may be carried out by a chemical gas transport reaction in presence of a carrier gas as a reagent. The two processes may be combined so that the application to the intermediate element is carried out by sublimation, while gas transport reaction is used for application from this element to the substrate.
FR7702723A 1977-02-01 1977-02-01 Emitter layer application in semiconductor prodn. - involves application of emitter from supply of an intermediate element, from which it is transferred to emitter support Granted FR2378873A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7702723A FR2378873A1 (en) 1977-02-01 1977-02-01 Emitter layer application in semiconductor prodn. - involves application of emitter from supply of an intermediate element, from which it is transferred to emitter support

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7702723A FR2378873A1 (en) 1977-02-01 1977-02-01 Emitter layer application in semiconductor prodn. - involves application of emitter from supply of an intermediate element, from which it is transferred to emitter support

Publications (2)

Publication Number Publication Date
FR2378873A1 true FR2378873A1 (en) 1978-08-25
FR2378873B1 FR2378873B1 (en) 1979-05-11

Family

ID=9186126

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7702723A Granted FR2378873A1 (en) 1977-02-01 1977-02-01 Emitter layer application in semiconductor prodn. - involves application of emitter from supply of an intermediate element, from which it is transferred to emitter support

Country Status (1)

Country Link
FR (1) FR2378873A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2508063A1 (en) * 1981-06-18 1982-12-24 Snecma STEAM PROCESS FOR THE DEPOSITION OF A PROTECTIVE COATING ON A METAL PART, DEVICE FOR IMPLEMENTING SAME AND PARTS OBTAINED ACCORDING TO SAID METHOD

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1463717A (en) * 1965-01-26 1966-12-23 Danfoss As Improvements to the vaporization of mixtures of substances on a substrate
FR1485970A (en) * 1965-07-05 1967-06-23 Siemens Ag Method for manufacturing epitaxially grown layers in binary semiconductor compounds
FR1584608A (en) * 1968-07-30 1969-12-26
FR2021226A1 (en) * 1968-10-22 1970-07-17 Siemens Ag

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1463717A (en) * 1965-01-26 1966-12-23 Danfoss As Improvements to the vaporization of mixtures of substances on a substrate
FR1485970A (en) * 1965-07-05 1967-06-23 Siemens Ag Method for manufacturing epitaxially grown layers in binary semiconductor compounds
FR1584608A (en) * 1968-07-30 1969-12-26
FR2021226A1 (en) * 1968-10-22 1970-07-17 Siemens Ag

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2508063A1 (en) * 1981-06-18 1982-12-24 Snecma STEAM PROCESS FOR THE DEPOSITION OF A PROTECTIVE COATING ON A METAL PART, DEVICE FOR IMPLEMENTING SAME AND PARTS OBTAINED ACCORDING TO SAID METHOD
EP0068950A1 (en) * 1981-06-18 1983-01-05 Societe Nationale D'etude Et De Construction De Moteurs D'aviation, "S.N.E.C.M.A." Vapour phase process for depositing a protective coating on a metallic article, apparatus therefor and articles obtained by this process

Also Published As

Publication number Publication date
FR2378873B1 (en) 1979-05-11

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Legal Events

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ST Notification of lapse