FR1485970A - Method for manufacturing epitaxially grown layers in binary semiconductor compounds - Google Patents

Method for manufacturing epitaxially grown layers in binary semiconductor compounds

Info

Publication number
FR1485970A
FR1485970A FR68011A FR68011A FR1485970A FR 1485970 A FR1485970 A FR 1485970A FR 68011 A FR68011 A FR 68011A FR 68011 A FR68011 A FR 68011A FR 1485970 A FR1485970 A FR 1485970A
Authority
FR
France
Prior art keywords
manufacturing
epitaxially grown
semiconductor compounds
grown layers
binary semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR68011A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Priority to FR68011A priority Critical patent/FR1485970A/en
Application granted granted Critical
Publication of FR1485970A publication Critical patent/FR1485970A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/06—Hydrogen phosphides
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/007—Preparing arsenides or antimonides, especially of the III-VI-compound type, e.g. aluminium or gallium arsenide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
FR68011A 1965-07-05 1966-07-04 Method for manufacturing epitaxially grown layers in binary semiconductor compounds Expired FR1485970A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR68011A FR1485970A (en) 1965-07-05 1966-07-04 Method for manufacturing epitaxially grown layers in binary semiconductor compounds

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES0097994 1965-07-05
FR68011A FR1485970A (en) 1965-07-05 1966-07-04 Method for manufacturing epitaxially grown layers in binary semiconductor compounds

Publications (1)

Publication Number Publication Date
FR1485970A true FR1485970A (en) 1967-06-23

Family

ID=25998158

Family Applications (1)

Application Number Title Priority Date Filing Date
FR68011A Expired FR1485970A (en) 1965-07-05 1966-07-04 Method for manufacturing epitaxially grown layers in binary semiconductor compounds

Country Status (1)

Country Link
FR (1) FR1485970A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2021226A1 (en) * 1968-10-22 1970-07-17 Siemens Ag
FR2378873A1 (en) * 1977-02-01 1978-08-25 G Pi Emitter layer application in semiconductor prodn. - involves application of emitter from supply of an intermediate element, from which it is transferred to emitter support

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2021226A1 (en) * 1968-10-22 1970-07-17 Siemens Ag
FR2378873A1 (en) * 1977-02-01 1978-08-25 G Pi Emitter layer application in semiconductor prodn. - involves application of emitter from supply of an intermediate element, from which it is transferred to emitter support

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