FR2378873B1 - - Google Patents

Info

Publication number
FR2378873B1
FR2378873B1 FR7702723A FR7702723A FR2378873B1 FR 2378873 B1 FR2378873 B1 FR 2378873B1 FR 7702723 A FR7702723 A FR 7702723A FR 7702723 A FR7702723 A FR 7702723A FR 2378873 B1 FR2378873 B1 FR 2378873B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7702723A
Other languages
French (fr)
Other versions
FR2378873A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
G PI
Original Assignee
G PI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by G PI filed Critical G PI
Priority to FR7702723A priority Critical patent/FR2378873A1/en
Publication of FR2378873A1 publication Critical patent/FR2378873A1/en
Application granted granted Critical
Publication of FR2378873B1 publication Critical patent/FR2378873B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/22—Sandwich processes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
FR7702723A 1977-02-01 1977-02-01 Emitter layer application in semiconductor prodn. - involves application of emitter from supply of an intermediate element, from which it is transferred to emitter support Granted FR2378873A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7702723A FR2378873A1 (en) 1977-02-01 1977-02-01 Emitter layer application in semiconductor prodn. - involves application of emitter from supply of an intermediate element, from which it is transferred to emitter support

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7702723A FR2378873A1 (en) 1977-02-01 1977-02-01 Emitter layer application in semiconductor prodn. - involves application of emitter from supply of an intermediate element, from which it is transferred to emitter support

Publications (2)

Publication Number Publication Date
FR2378873A1 FR2378873A1 (en) 1978-08-25
FR2378873B1 true FR2378873B1 (en) 1979-05-11

Family

ID=9186126

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7702723A Granted FR2378873A1 (en) 1977-02-01 1977-02-01 Emitter layer application in semiconductor prodn. - involves application of emitter from supply of an intermediate element, from which it is transferred to emitter support

Country Status (1)

Country Link
FR (1) FR2378873A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2508063A1 (en) * 1981-06-18 1982-12-24 Snecma STEAM PROCESS FOR THE DEPOSITION OF A PROTECTIVE COATING ON A METAL PART, DEVICE FOR IMPLEMENTING SAME AND PARTS OBTAINED ACCORDING TO SAID METHOD

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1521205B1 (en) * 1965-01-26 1969-12-04 Danfoss As Method and device for vapor deposition of mixtures of substances
FR1485970A (en) * 1965-07-05 1967-06-23 Siemens Ag Method for manufacturing epitaxially grown layers in binary semiconductor compounds
FR1584608A (en) * 1968-07-30 1969-12-26
DE1804462A1 (en) * 1968-10-22 1970-05-27 Siemens Ag Process for producing epitaxial layers of semiconducting compounds

Also Published As

Publication number Publication date
FR2378873A1 (en) 1978-08-25

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Legal Events

Date Code Title Description
ST Notification of lapse