FR2377095B1 - - Google Patents
Info
- Publication number
- FR2377095B1 FR2377095B1 FR7700471A FR7700471A FR2377095B1 FR 2377095 B1 FR2377095 B1 FR 2377095B1 FR 7700471 A FR7700471 A FR 7700471A FR 7700471 A FR7700471 A FR 7700471A FR 2377095 B1 FR2377095 B1 FR 2377095B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/102—Cathode base regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7700471A FR2377095A1 (fr) | 1977-01-10 | 1977-01-10 | Thyristor a amplificateur de declenchement et a ouverture commandee par la gachette |
| BE1008621A BE862498A (fr) | 1977-01-10 | 1977-12-30 | Thyristor a amplificateur de declenchement et a ouverture commandee par la gachette |
| DE2800172A DE2800172C2 (de) | 1977-01-10 | 1978-01-03 | Thyristor mit Zündverstärkung und Löschsteuerung |
| GB78153A GB1542227A (en) | 1977-01-10 | 1978-01-04 | Amplifying gate thyristor with gate turnoff(gto) |
| US05/866,897 US4177478A (en) | 1977-01-10 | 1978-01-04 | Amplifying gate thyristor with gate turn-off (G.T.O.) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7700471A FR2377095A1 (fr) | 1977-01-10 | 1977-01-10 | Thyristor a amplificateur de declenchement et a ouverture commandee par la gachette |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2377095A1 FR2377095A1 (fr) | 1978-08-04 |
| FR2377095B1 true FR2377095B1 (US07714131-20100511-C00024.png) | 1980-02-29 |
Family
ID=9185269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7700471A Granted FR2377095A1 (fr) | 1977-01-10 | 1977-01-10 | Thyristor a amplificateur de declenchement et a ouverture commandee par la gachette |
Country Status (5)
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2825794C2 (de) * | 1978-06-13 | 1986-03-20 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Abschaltbarer Thyristor |
| JPS607394B2 (ja) * | 1978-08-18 | 1985-02-23 | 株式会社明電舎 | 半導体制御素子 |
| DE3005458A1 (de) * | 1980-01-16 | 1981-07-23 | BBC AG Brown, Boveri & Cie., Baden, Aargau | Thyristor zum verlustarmen schalten kurzer impulse |
| JPS57201077A (en) * | 1981-06-05 | 1982-12-09 | Hitachi Ltd | Semiconductor switching device |
| JPS5871657A (ja) * | 1981-10-23 | 1983-04-28 | Toshiba Corp | ゲ−トタ−ンオフサイリスタ |
| JPS5927571A (ja) * | 1982-08-05 | 1984-02-14 | Meidensha Electric Mfg Co Ltd | ゲ−トタ−ンオフサイリスタ |
| US4595939A (en) * | 1982-11-15 | 1986-06-17 | Tokyo Shibaura Denki Kabushiki Kaisha | Radiation-controllable thyristor with multiple, non-concentric amplified stages |
| DE3435548A1 (de) * | 1984-09-27 | 1986-04-03 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit hoher innerer zuendverstaerkung |
| EP0190585A1 (de) * | 1985-02-01 | 1986-08-13 | Siemens Aktiengesellschaft | Abschaltbares Halbleiterbauelement |
| JPH0691245B2 (ja) * | 1985-06-26 | 1994-11-14 | 株式会社日立製作所 | ゲ−トタ−ンオフサイリスタ |
| JPS62177968A (ja) * | 1986-01-31 | 1987-08-04 | Hitachi Ltd | ゲ−トタ−ンオフサイリスタ |
| US4717940A (en) * | 1986-03-11 | 1988-01-05 | Kabushiki Kaisha Toshiba | MIS controlled gate turn-off thyristor |
| EP0283788A1 (de) * | 1987-03-09 | 1988-09-28 | Siemens Aktiengesellschaft | Abschaltbares Leistungshalbleiterbauelement |
| CN1056248C (zh) * | 1992-09-12 | 2000-09-06 | 朱文有 | 一种静电感应晶闸管的制造方法及其器件 |
| FR2708811B1 (fr) * | 1993-08-06 | 1995-10-20 | Sgs Thomson Microelectronics | Thyristor à amplification de gachette à courant de maintien accru. |
| US6066864A (en) * | 1996-05-20 | 2000-05-23 | Siemens Aktiengesellschaft | Thyristor with integrated dU/dt protection |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1803935A1 (de) * | 1967-10-20 | 1969-10-02 | Ckd Praha | Mehrschichtiges Halbleiterbauelement mit zumindest vier pn-UEbergaengen |
| US3641403A (en) * | 1970-05-25 | 1972-02-08 | Mitsubishi Electric Corp | Thyristor with degenerate semiconductive region |
| GB1303337A (US07714131-20100511-C00024.png) * | 1970-10-06 | 1973-01-17 | ||
| US3906545A (en) * | 1972-01-24 | 1975-09-16 | Licentia Gmbh | Thyristor structure |
| DE2241217C3 (de) * | 1972-08-22 | 1978-07-06 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Thyristor mit erhöhter Ein- und Durchschaltgeschwindigkeit |
| US3896476A (en) * | 1973-05-02 | 1975-07-22 | Mitsubishi Electric Corp | Semiconductor switching device |
| JPS5718347B2 (US07714131-20100511-C00024.png) * | 1974-01-07 | 1982-04-16 | ||
| FR2299727A1 (fr) * | 1975-01-28 | 1976-08-27 | Alsthom Cgee | Thyristor a caracteristiques de commutation ameliorees |
-
1977
- 1977-01-10 FR FR7700471A patent/FR2377095A1/fr active Granted
- 1977-12-30 BE BE1008621A patent/BE862498A/xx unknown
-
1978
- 1978-01-03 DE DE2800172A patent/DE2800172C2/de not_active Expired
- 1978-01-04 GB GB78153A patent/GB1542227A/en not_active Expired
- 1978-01-04 US US05/866,897 patent/US4177478A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE2800172C2 (de) | 1983-05-26 |
| DE2800172A1 (de) | 1978-07-13 |
| BE862498A (fr) | 1978-06-30 |
| US4177478A (en) | 1979-12-04 |
| GB1542227A (en) | 1979-03-14 |
| FR2377095A1 (fr) | 1978-08-04 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TP | Transmission of property |