FR2376494A1 - Random access dynamic memory - has pushpull amplifier for rapid action in triggering digit line potentials and uses transistors as input resistors - Google Patents
Random access dynamic memory - has pushpull amplifier for rapid action in triggering digit line potentials and uses transistors as input resistorsInfo
- Publication number
- FR2376494A1 FR2376494A1 FR7639495A FR7639495A FR2376494A1 FR 2376494 A1 FR2376494 A1 FR 2376494A1 FR 7639495 A FR7639495 A FR 7639495A FR 7639495 A FR7639495 A FR 7639495A FR 2376494 A1 FR2376494 A1 FR 2376494A1
- Authority
- FR
- France
- Prior art keywords
- digit lines
- amplifier
- random access
- dynamic memory
- triggering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 title 1
- 230000000295 complement effect Effects 0.000 abstract 1
- 208000003580 polydactyly Diseases 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US64485776A | 1976-12-29 | 1976-12-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2376494A1 true FR2376494A1 (en) | 1978-07-28 |
| FR2376494B1 FR2376494B1 (cs) | 1981-02-06 |
Family
ID=24586623
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7639495A Granted FR2376494A1 (en) | 1976-12-29 | 1976-12-29 | Random access dynamic memory - has pushpull amplifier for rapid action in triggering digit line potentials and uses transistors as input resistors |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2376494A1 (cs) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2239736A1 (en) * | 1973-08-03 | 1975-02-28 | Nat Semiconductor Corp | Memory circuit with individual transistor storage cells - is connected with multiple lead to form storage line |
-
1976
- 1976-12-29 FR FR7639495A patent/FR2376494A1/fr active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2239736A1 (en) * | 1973-08-03 | 1975-02-28 | Nat Semiconductor Corp | Memory circuit with individual transistor storage cells - is connected with multiple lead to form storage line |
Non-Patent Citations (1)
| Title |
|---|
| NV8107/74 * |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2376494B1 (cs) | 1981-02-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR930001226A (ko) | 고속 센싱 동작을 수행하는 센스 앰프 | |
| KR920001542A (ko) | 감지 증폭기를 갖는 반도체 메모리 | |
| US3983543A (en) | Random access memory read/write buffer circuits incorporating complementary field effect transistors | |
| US3760380A (en) | Silicon gate complementary mos dynamic ram | |
| KR910017636A (ko) | 반도체 기억장치 | |
| KR860003604A (ko) | 반도체 메모리 장치 | |
| KR960042742A (ko) | 센스앰프회로 | |
| US3761899A (en) | Dynamic random access memory with a secondary source voltage to reduce injection | |
| KR890010906A (ko) | 스태틱 ram의 출력회로 | |
| KR890008826A (ko) | 다이나믹 랜덤 액세스 메모리에 있어서의 센스앰프 구동장치 및 센스앰프 구동방법 | |
| KR890008837A (ko) | 바이폴라 콤프리멘타리 금속산화막 반도체를 사용하는 논리회로와 그 논리회로를 갖는 반도체 메모리장치 | |
| KR870008320A (ko) | 상이형 메모리셀로 구성되는 반도체 메모리장치 | |
| KR920020497A (ko) | 센스 앰프 회로를 갖는 반도체 ic장치 | |
| GB1509633A (en) | Memory device | |
| JPS5755592A (en) | Memory device | |
| US4860257A (en) | Level shifter for an input/output bus in a CMOS dynamic ram | |
| KR860008562A (ko) | 비트선 구동기 및 트랜지스터 조합체 | |
| KR900019040A (ko) | 다이나믹형 랜덤억세스메모리 | |
| KR890013769A (ko) | 중간전위생성회로 | |
| KR970003270A (ko) | 반도체메모리소자의 테스트를 위한 고속 기록회로 | |
| FR2376494A1 (en) | Random access dynamic memory - has pushpull amplifier for rapid action in triggering digit line potentials and uses transistors as input resistors | |
| JPS6043295A (ja) | 半導体記憶装置 | |
| KR930008848A (ko) | 반도체 집적회로 | |
| KR940026953A (ko) | 반도체 메모리 장치 | |
| KR970060224A (ko) | 반도체기억장치 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TP | Transmission of property | ||
| CA | Change of address | ||
| CD | Change of name or company name | ||
| TP | Transmission of property |