FR2376493A1 - Dispositif d'emmagasinage a lecture non destructrice et cellule de memoire dynamique en portant application - Google Patents

Dispositif d'emmagasinage a lecture non destructrice et cellule de memoire dynamique en portant application

Info

Publication number
FR2376493A1
FR2376493A1 FR7736215A FR7736215A FR2376493A1 FR 2376493 A1 FR2376493 A1 FR 2376493A1 FR 7736215 A FR7736215 A FR 7736215A FR 7736215 A FR7736215 A FR 7736215A FR 2376493 A1 FR2376493 A1 FR 2376493A1
Authority
FR
France
Prior art keywords
memory cell
channel
storage device
application
dynamic memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7736215A
Other languages
English (en)
French (fr)
Other versions
FR2376493B1 (cg-RX-API-DMAC10.html
Inventor
Frank F Fang
Hwa N Yu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2376493A1 publication Critical patent/FR2376493A1/fr
Application granted granted Critical
Publication of FR2376493B1 publication Critical patent/FR2376493B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Light Receiving Elements (AREA)
FR7736215A 1976-12-30 1977-11-24 Dispositif d'emmagasinage a lecture non destructrice et cellule de memoire dynamique en portant application Granted FR2376493A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75588776A 1976-12-30 1976-12-30

Publications (2)

Publication Number Publication Date
FR2376493A1 true FR2376493A1 (fr) 1978-07-28
FR2376493B1 FR2376493B1 (cg-RX-API-DMAC10.html) 1980-08-22

Family

ID=25041090

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7736215A Granted FR2376493A1 (fr) 1976-12-30 1977-11-24 Dispositif d'emmagasinage a lecture non destructrice et cellule de memoire dynamique en portant application

Country Status (4)

Country Link
JP (1) JPS5384577A (cg-RX-API-DMAC10.html)
DE (1) DE2756915A1 (cg-RX-API-DMAC10.html)
FR (1) FR2376493A1 (cg-RX-API-DMAC10.html)
GB (1) GB1593070A (cg-RX-API-DMAC10.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5510630A (en) * 1993-10-18 1996-04-23 Westinghouse Electric Corporation Non-volatile random access memory cell constructed of silicon carbide
US5385855A (en) * 1994-02-24 1995-01-31 General Electric Company Fabrication of silicon carbide integrated circuits

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147280A (en) * 1975-06-13 1976-12-17 Hitachi Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS5384577A (en) 1978-07-26
DE2756915A1 (de) 1978-07-06
JPS5635031B2 (cg-RX-API-DMAC10.html) 1981-08-14
GB1593070A (en) 1981-07-15
FR2376493B1 (cg-RX-API-DMAC10.html) 1980-08-22

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Legal Events

Date Code Title Description
ST Notification of lapse