JPS5384577A - Nonndestructive reading dynamic semiconductor memory - Google Patents

Nonndestructive reading dynamic semiconductor memory

Info

Publication number
JPS5384577A
JPS5384577A JP14824777A JP14824777A JPS5384577A JP S5384577 A JPS5384577 A JP S5384577A JP 14824777 A JP14824777 A JP 14824777A JP 14824777 A JP14824777 A JP 14824777A JP S5384577 A JPS5384577 A JP S5384577A
Authority
JP
Japan
Prior art keywords
nonndestructive
semiconductor memory
dynamic semiconductor
reading dynamic
reading
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14824777A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5635031B2 (cg-RX-API-DMAC10.html
Inventor
Fuu Fuan Furanku
Nien Yuu Uwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5384577A publication Critical patent/JPS5384577A/ja
Publication of JPS5635031B2 publication Critical patent/JPS5635031B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Light Receiving Elements (AREA)
JP14824777A 1976-12-30 1977-12-12 Nonndestructive reading dynamic semiconductor memory Granted JPS5384577A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75588776A 1976-12-30 1976-12-30

Publications (2)

Publication Number Publication Date
JPS5384577A true JPS5384577A (en) 1978-07-26
JPS5635031B2 JPS5635031B2 (cg-RX-API-DMAC10.html) 1981-08-14

Family

ID=25041090

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14824777A Granted JPS5384577A (en) 1976-12-30 1977-12-12 Nonndestructive reading dynamic semiconductor memory

Country Status (4)

Country Link
JP (1) JPS5384577A (cg-RX-API-DMAC10.html)
DE (1) DE2756915A1 (cg-RX-API-DMAC10.html)
FR (1) FR2376493A1 (cg-RX-API-DMAC10.html)
GB (1) GB1593070A (cg-RX-API-DMAC10.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5510630A (en) * 1993-10-18 1996-04-23 Westinghouse Electric Corporation Non-volatile random access memory cell constructed of silicon carbide
US5385855A (en) * 1994-02-24 1995-01-31 General Electric Company Fabrication of silicon carbide integrated circuits

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147280A (en) * 1975-06-13 1976-12-17 Hitachi Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147280A (en) * 1975-06-13 1976-12-17 Hitachi Ltd Semiconductor device

Also Published As

Publication number Publication date
DE2756915A1 (de) 1978-07-06
JPS5635031B2 (cg-RX-API-DMAC10.html) 1981-08-14
GB1593070A (en) 1981-07-15
FR2376493A1 (fr) 1978-07-28
FR2376493B1 (cg-RX-API-DMAC10.html) 1980-08-22

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