JPS5635031B2 - - Google Patents
Info
- Publication number
- JPS5635031B2 JPS5635031B2 JP14824777A JP14824777A JPS5635031B2 JP S5635031 B2 JPS5635031 B2 JP S5635031B2 JP 14824777 A JP14824777 A JP 14824777A JP 14824777 A JP14824777 A JP 14824777A JP S5635031 B2 JPS5635031 B2 JP S5635031B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US75588776A | 1976-12-30 | 1976-12-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5384577A JPS5384577A (en) | 1978-07-26 |
| JPS5635031B2 true JPS5635031B2 (cg-RX-API-DMAC10.html) | 1981-08-14 |
Family
ID=25041090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14824777A Granted JPS5384577A (en) | 1976-12-30 | 1977-12-12 | Nonndestructive reading dynamic semiconductor memory |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5384577A (cg-RX-API-DMAC10.html) |
| DE (1) | DE2756915A1 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2376493A1 (cg-RX-API-DMAC10.html) |
| GB (1) | GB1593070A (cg-RX-API-DMAC10.html) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5510630A (en) * | 1993-10-18 | 1996-04-23 | Westinghouse Electric Corporation | Non-volatile random access memory cell constructed of silicon carbide |
| US5385855A (en) * | 1994-02-24 | 1995-01-31 | General Electric Company | Fabrication of silicon carbide integrated circuits |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51147280A (en) * | 1975-06-13 | 1976-12-17 | Hitachi Ltd | Semiconductor device |
-
1977
- 1977-11-24 FR FR7736215A patent/FR2376493A1/fr active Granted
- 1977-12-09 GB GB51432/17A patent/GB1593070A/en not_active Expired
- 1977-12-12 JP JP14824777A patent/JPS5384577A/ja active Granted
- 1977-12-21 DE DE19772756915 patent/DE2756915A1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5384577A (en) | 1978-07-26 |
| DE2756915A1 (de) | 1978-07-06 |
| GB1593070A (en) | 1981-07-15 |
| FR2376493A1 (fr) | 1978-07-28 |
| FR2376493B1 (cg-RX-API-DMAC10.html) | 1980-08-22 |