GB1375176A - - Google Patents

Info

Publication number
GB1375176A
GB1375176A GB507971A GB507971A GB1375176A GB 1375176 A GB1375176 A GB 1375176A GB 507971 A GB507971 A GB 507971A GB 507971 A GB507971 A GB 507971A GB 1375176 A GB1375176 A GB 1375176A
Authority
GB
United Kingdom
Prior art keywords
layer
charges
stored
sio
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB507971A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to GB507971A priority Critical patent/GB1375176A/en
Priority to IT67541/72A priority patent/IT949161B/it
Priority to NL7202320A priority patent/NL7202320A/xx
Priority to FR7205908A priority patent/FR2126277A1/fr
Priority to DE19722208324 priority patent/DE2208324A1/de
Publication of GB1375176A publication Critical patent/GB1375176A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/048—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using other optical storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
GB507971A 1971-02-22 1971-02-22 Expired GB1375176A (cg-RX-API-DMAC10.html)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB507971A GB1375176A (cg-RX-API-DMAC10.html) 1971-02-22 1971-02-22
IT67541/72A IT949161B (it) 1971-02-22 1972-02-21 Dispositivo semiconduttore
NL7202320A NL7202320A (cg-RX-API-DMAC10.html) 1971-02-22 1972-02-22
FR7205908A FR2126277A1 (cg-RX-API-DMAC10.html) 1971-02-22 1972-02-22
DE19722208324 DE2208324A1 (de) 1971-02-22 1972-02-22 Halbleiteranordnung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB507971A GB1375176A (cg-RX-API-DMAC10.html) 1971-02-22 1971-02-22

Publications (1)

Publication Number Publication Date
GB1375176A true GB1375176A (cg-RX-API-DMAC10.html) 1974-11-27

Family

ID=9789369

Family Applications (1)

Application Number Title Priority Date Filing Date
GB507971A Expired GB1375176A (cg-RX-API-DMAC10.html) 1971-02-22 1971-02-22

Country Status (5)

Country Link
DE (1) DE2208324A1 (cg-RX-API-DMAC10.html)
FR (1) FR2126277A1 (cg-RX-API-DMAC10.html)
GB (1) GB1375176A (cg-RX-API-DMAC10.html)
IT (1) IT949161B (cg-RX-API-DMAC10.html)
NL (1) NL7202320A (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0788167A3 (en) * 1992-03-24 1998-03-11 Seiko Instruments Inc. Semiconductor radial rays detecting with a reading condenser

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2533371B1 (fr) * 1982-09-21 1985-12-13 Thomson Csf Structure de grille pour circuit integre comportant des elements du type grille-isolant-semi-conducteur et procede de realisation d'un circuit integre utilisant une telle structure
JP2642750B2 (ja) * 1988-10-20 1997-08-20 キヤノン株式会社 半導体装置及びそれを搭載した信号処理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0788167A3 (en) * 1992-03-24 1998-03-11 Seiko Instruments Inc. Semiconductor radial rays detecting with a reading condenser
EP0790650A3 (en) * 1992-03-24 1998-03-11 Seiko Instruments Inc. Semiconductor radiation detector with a reading condenser

Also Published As

Publication number Publication date
DE2208324A1 (de) 1972-09-07
NL7202320A (cg-RX-API-DMAC10.html) 1972-08-24
FR2126277A1 (cg-RX-API-DMAC10.html) 1972-10-06
IT949161B (it) 1973-06-11

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee